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Determination of EL2 capture and emission coefficients in semi-insulating n-GaAs (1999)

Bonilla, L. L. ; Hernando, P. J. ; Kindelan, M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 988-990

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have determined the capture and emission coefficients by EL2 traps in semi-insulating n-GaAs using available experimental results. To this end, we have derived a simplified mathematical model from the complete drift–diffusion equations by singular perturbation methods. The capture and emission coefficients are adjusted so that the numerically obtained steady-state and high-field charge dipole solutions of the simplified model match the available experimental results. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123432

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