Note: Band 2 von 3: Die vorliegende dreibändige Studie soll daher als Wegweiser für Resilienzüberlegungen im Kontext der Transformation von Lieferketten und Wertschöpfungsnetzwerken dienen , Band 1: Resilienz als wirtschafts- und innovationspolitisches Gestaltungsziel und Band 3: Resilienz der Fahrzeugindustrie , Literaturverzeichnis: Seite 52-58

Note: Band 3 von 3: Die vorliegende dreibändige Studie soll daher als Wegweiser für Resilienzüberlegungen im Kontext der Transformation von Lieferketten und Wertschöpfungsnetzwerken dienen , Band 1: Resilienz als wirtschafts- und innovationspolitisches Gestaltungsziel und Band 2: Resilienz der Gesundheitsindustrien , Literaturverzeichnis: Seite 44-49

Note: Abschluss der Studie: Mai 2021 , Literaturverzeichnis: Seite 168-171

Note: Band 1 von 3: Die vorliegende dreibändige Studie soll daher als Wegweiser für Resilienzüberlegungen im Kontext der Transformation von Lieferketten und Wertschöpfungsnetzwerken dienen , Band 2: Resilienz der Gesundheitsindustrien und Band 3: Resilienz der Fahrzeugindustrie , Literaturverzeichnis: Seite 42-45

Note: Abschluss der Studie: Mai 2021 , Literaturverzeichnis: Seite 168-171

Note: nIndex

Note: Intro -- Related Journal Articles -- Foreword -- Acknowledgments -- Contents -- 1 Introduction -- 1.1…Motivation: High Efficiency Photovoltaics on Si(100) Substrates -- 1.2…State-of-the-Art: III--V Semiconductor Heteroepitaxy on Si(100) -- 1.3…Outline: Gap/Si(100) Interfaces and Anti-phase Disorder -- References -- 2 Experimental -- 2.1…Metal-Organic Vapor Phase Epitaxy -- 2.1.1 Substrates and Wet-Chemical Pretreatment of Si(100) -- 2.1.2 Essential Process Steps for Sample Preparation -- 2.1.3 Sample Transfer to Ultra High Vacuum -- 2.1.4 Access to Remote Instrumentation -- 2.2…In Situ Process Control -- 2.2.1 Reflectance Anisotropy Spectroscopy -- 2.2.2 Curvature Sensor and Surface Temperature -- 2.2.3 Mass Spectroscopy -- 2.3…Surface Characterization in UHV -- 2.3.1 X-ray Photoelectron Spectroscopy -- 2.3.2 Low-Energy Electron Diffraction -- 2.3.3 Scanning Tunneling Microscopy -- 2.3.4 Fourier-Transform Infrared Spectroscopy -- 2.3.5 Low-Energy Electron Microscopy -- 2.4…Ex Situ Characterization -- 2.4.1 Atomic Force Microscopy -- 2.4.2 Transmission Electron Microscopy -- 2.4.3 General Material Characterization -- References -- 3 Si(100) Surfaces in Chemical Vapor Environments -- 3.1…State-of-the-Art: Si(100) and its Atomic Surface Structure -- 3.2…Thermal Oxide Removal in Hydrogen Under Standard Process Conditions -- 3.2.1 Verification of Thermal Oxide Removal by XPS -- 3.2.2 Progression of the Oxide Removal in Hydrogen Process Gas -- 3.2.3 Potential Deoxidation Mechanisms in a Process Gas Environment -- 3.2.4 Surface Structure After Thermal Oxide Removal in a CVD Reactor -- 3.3…Variation of the Process Environment and Alternative Carrier Gases -- 3.3.1 Residual Oxide Films After Hydrogen Annealing Observed -- 3.3.2 XPS Line Shape Analysis Applied to Residual SiO2 Layers -- 3.3.3 Process Evaluation by Estimation of Oxide Film Thickness. , 3.3.4 Influence of Process Gas Composition on Oxide Removal -- 3.3.5 Impact of Alternative Process Gases on Si(100) Preparation -- 3.4…Variation of Essential Substrate Parameters -- 3.4.1 Comparison Between Wet-Chemical and Native Oxide Layers -- 3.4.2 Comparison of Differently Manufactured Si(100) Substrates -- 3.5…Atomic Surface Structure After Thermal Oxide Removal -- 3.5.1 Surface Reconstruction and Domain Distribution -- 3.5.2 Atomic Structure and Surface Morphology -- 3.5.2.1 Si(100) with Slight Misorientation (0.1deg Towards [011]) -- 3.5.2.2 Si(100) with Intermediate Misorientation (2deg Towards [011]) -- 3.5.2.3 Si(100) with High Misorientation (6deg Towards [011]) -- 3.6…The Role of Hydrogen During CVD Surface Preparation -- 3.6.1 Verification of Si--H Bonds on CVD-Prepared Si(100) -- 3.6.2 Polarization Dependence of the ATR Spectra -- 3.6.3 Verification of Nearly Single-Domain Si(100) -- 3.6.4 Confirmation of a Complete Monohydride Termination -- 3.6.5 In Situ Observation of Si(100) Hydrogenation in the Process Gas -- 3.7…Unconventional Double-Layer Step Formation in a CVD Ambient -- 3.7.1 Si(100) with Slight Misorientation (0.1deg Towards [011]) -- 3.7.2 Si(100) with Intermediate Misorientation (2deg Towards [011]) -- 3.7.3 Si(100) with High Misorientation (6deg Towards [011]) -- References -- 4 GaP(100) and InP(100) Surfaces -- 4.1…State-of-the-Art: Reconstructions of MOVPE-Prepared Surfaces -- 4.2…In Situ Control of GaP(100) Surfaces During MOVPE Preparation -- 4.2.1 Transition from the P-rich to the Ga-rich Surface Reconstruction -- 4.2.2 Thermal Development of RA Spectra of GaP(100) -- 4.2.3 Excess Phosphorus Accumulation on the P-rich Surface -- 4.3…GaP(100) and InP(100) Preparation in an Alternative Process Ambient -- 4.4…Atomic Resolution of the P-rich Surfaces and Dynamical Observation. , 4.4.1 Evidence for Flip-flop Motion on P-rich GaP(100) Surfaces -- 4.4.2 Temperature Dependence of the Dimer Flipping Processes -- 4.4.3 Dimer Flipping on P-rich InP(100) Surfaces -- References -- 5 GaP Growth on Si(100) and Anti-phase Disorder -- 5.1…State-of-the-Art: Polar on Non-polar Epitaxy and Anti-phase Disorder -- 5.1.1 Detection of Anti-phase Disorder: Established Techniques -- 5.1.2 Correlation of Anti-phase Disorder and Surface Structure -- 5.2…Potential for In Situ Detection of Anti-phase Disorder -- 5.3…Quantification of GaP/Si(100) Anti-phase Domains -- 5.3.1 In Situ Characterization of Heteroepitaxial GaP/Si(100) -- 5.3.2 Direct Comparison to RA Spectra of Homoepitaxial GaP(100) -- 5.3.3 Impact of the GaP/Si(100) Heterointerface on In Situ Spectra -- 5.3.4 Interference Induced by the GaP/Si(100) Heterointerface -- 5.3.5 Interference Corrected Normalization of In Situ RAS Signals -- 5.3.6 Evaluation of the Empirical Correction Scheme -- 5.3.7 Indications for Optical Interface Anisotropy -- 5.4…In Situ Verification of Single-Domain Polar on Non-polar Epitaxy -- 5.5…Indirect In Situ Characterization of Si(100) Surface Structures -- 5.5.1 Surface Structure of the Si(100) Substrates -- 5.5.2 Growth Conditions for Straight Propagation of APBs -- 5.5.3 Preparation of the P-rich Surface Reconstruction -- 5.5.4 In Situ APD Quantification of the GaP/Si(100) Surface -- 5.5.5 Ex Situ Verification by Dark-Field TEM Analysis -- 5.6…Lateral Resolution of Anti-phase Disorder on III--V/Si(100) Surfaces -- 5.7…Evaluation of the GaP/Si(100) Heterointerface -- 5.7.1 Empirical Evaluation -- 5.7.2 Optical Calculations -- 5.7.2.1 GaP/Si(100) Surface Anisotropy -- 5.7.2.2 Calculation of the APD Content of the GaP/Si(100) Surfaces -- 5.7.2.3 GaP/Si(100) Interface Anisotropy -- References -- 6 Conclusion -- Reference.

Note: Intro -- Supervisors' Foreword -- Contents -- Abbreviations and Symbols -- 1 Introduction -- References -- 2 Experimental Setup and Background -- 2.1…Sample Preparation -- 2.1.1 UHV Preparation Chamber -- 2.1.2 Single Crystal Preparation and Characterization -- 2.1.3 Sample Holder -- 2.1.4 Argon Sputtering -- 2.1.5 Annealing -- 2.1.6 Substrate Characterization -- 2.1.7 Epitaxy of Diluted Cu Films -- 2.1.8 Co in Cu(100) -- 2.1.9 Fe in Cu(100) -- 2.1.10 Ag in Cu(100) -- 2.2…Scanning Tunneling Microscopy -- 2.2.1 Standard STM Theory -- 2.2.2 Constant Current Topography -- 2.2.3 Multi-bias Topographies -- 2.2.4 dI/dV Spectroscopy -- 2.2.5 Lock-in Technique -- 2.2.6 Basic Principle -- 2.2.7 Data Processing -- 2.2.8 STS Normalization -- References -- 3 Investigation of Sub-surface Atoms by STM -- 3.1…Imaging Buried Impurities -- 3.1.1 Electron Focusing Effect -- 3.1.2 Oscillation Wave Length -- 3.1.3 Impact of the Surface -- 3.1.4 The Cu(100) Surface -- 3.2…Extracting the Impurity Position Below the Surface -- References -- 4 Kondo Physics of Single Sub-surface Atoms -- 4.1…State of the Art -- 4.2…Long-Range Kondo Signature of a Single Magnetic Atom -- 4.3…The Vicinity of an Kondo Impurity -- 4.3.1 Friedel Oscillation: The Impact of the Band Structure -- 4.3.2 Model of Resonant Scattering: A Kondo Impurity -- 4.4…Simulation -- 4.5…Phenomenological Fit Formula -- 4.6…Microscopic Parameters of Iron and Cobalt Atoms -- 4.7…Distance Dependence of the Kondo Signature -- 4.7.1 Lateral Dependence -- 4.7.2 Dependence on the Impurity Position Below the Surface -- 4.8…Spatial Dependence of the Kondo Temperature -- 4.9…Discussion -- References -- 5 Signatures of Non-magnetic Atoms -- 5.1…Topographic Investigation -- 5.2…Voltage Dependence of the Interference Pattern -- 5.2.1 Comparison with Magnetic Impurities -- 5.3…Signatures Around the Fermi Energy. , 5.4…Summary -- References -- 6 Two-Impurity Kondo Physics -- 6.1…The Two-Impurity Kondo Model -- 6.1.1 Fundamentals -- 6.1.2 Competing Effects -- 6.2…Characterization of Fe Dimers -- 6.3…Comparison with Theoretical Results -- 6.4…Conclusion -- References -- 7 Outlook -- References -- 8 Summary -- Appendix.