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  • 1
    Electronic Resource
    Electronic Resource
    Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3301-3313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (3–300-nm) oxides were grown on single-crystal silicon substrates at temperatures from 523 to 673 K in a low-pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal-oxide-semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O−, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space-charge limited regime for films thicker than approximately 100 nm. The relationship between oxide thickness (xox), overall potential drop (Vox) and ion current (ji) in the space-charge limited transport region was of the form: ji ∝ V2ox/x3ox. Transmission electron microscopy analysis of 5–60-nm-thick anodized films indicated that the silicon-silicon dioxide interface was indistinguishable from that of thermal oxides grown at 1123 K.High-frequency capacitance-voltage (C-V) and ramped bias current-voltage (I-V) studies performed on 5.4–30-nm gate thickness capacitors indicated that the as-grown ECR films had high levels of fixed oxide charge ((approximately-greater-than)1011 cm−2) and interface traps ((approximately-greater-than)1012 cm−2 eV−1). The fixed charge level could be reduced to ≈4×1010 cm−2 by a 20 min polysilicon gate activation anneal at 1123 K in nitrogen; the interface trap density at mid-band gap decreased to ≈(1–2)×1011 cm−2 eV−1 after this process. The mean breakdown strength for anodic oxides grown under optimum conditions was 10.87±0.83 MV cm−1. Electrical properties of the 5.4–8-nm gates compared well with thicker films and control dry thermal oxides of similar thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349264
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of photoresist etching in an electron cyclotron resonance plasma (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1859-1865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance plasma processing system was used to etch hardbaked KTI-820 photoresist from single crystal silicon wafers, silicon dioxide films and patterned multilayer structures. Etch rates of 1500 nm/minute were observed at a substrate temperature below 373 K in a Pforward=750 W, 0.13-Pa ECR oxygen plasma with no applied substrate bias. The etch rate increased linearly with increasing power from Pforward=300–750 W. Etch rate was a complicated function of pressure and residence time, but a modified adsorption-reaction-ion-stimulated desorption rate expression could be used to fit the data. Etch rates decreased for increasing oxygen residence time at low operating pressures due to a combination of polymeric film formation of reaction products and reactant (atomic oxygen) depletion. Maximum etch rates were observed at approximately 0.13 Pa for all residence times. Multilayer photoresist structures were etched at various pressures as well as at a 45° angle to the incident plasma stream. Etch profiles for the variable angle runs indicated that the etch rate was strongly dependent on ion flux. Etch anisotropy increased with decreasing pressure, consistent with increased ion bombardment energy. The degree of anisotropy was, however, limited due to a non-normal component of ion energy, which has been interpreted previously as an ion temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346598
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum surface analysis coupled with a high pressure system for the study of near critical and supercritical fluid processing (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 184-188 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system has been constructed for ultrahigh vacuum analysis investigation of surfaces after high pressure fluid processing. The system features a cell capable of withstanding pressures up to 400 bar that opens directly into an ultrahigh vacuum (10−10 Torr) system to allow transfer of samples for analysis. Temperature control of the cell and fluid is possible to within ±1 °C up to temperatures of 400 °C. The high pressure system design allows the preparation and study of supercritical fluid mixtures as well as of pure components. X-ray photoelectron spectroscopy, Auger electron spectroscopy, sputter etching, and vacuum anneal capabilities comprise the surface analysis system. The fluids investigated include supercritical carbon dioxide, methanol, water, and their mixtures; these are applied to processes such as surface cleaning and thin film etching using high pressure fluids. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147806
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  • 4
    Electronic Resource
    Electronic Resource
    Oxide formation during plasma etching of silicon-containing resists (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface modification during oxygen plasma etching of polysilylmethylstyrene resists has been monitored using x-ray photoelectron spectroscopy. Plasma exposure converted the silicon present in the polymers to an oxidized surface region which prevented further chemical etching. Conversion was more rapid and more complete when etching under conditions where higher energy ion bombardment occurred. Polysilylmethylstyrene reached a steady-state oxide thickness between 3.4 and 5.8 nm, depending on etching conditions. A copolymer of this material with chloromethylstyrene showed a comparable thickness when etched at high ion energies, but did not reach a steady state when etched at conditions where the average ion energy was below 110 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101337
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  • 5
    Electronic Resource
    Electronic Resource
    Comparison of low-pressure and plasma-enhanced chemical vapor deposited tungsten thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1133-1135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten thin films deposited by low-pressure and plasma-enhanced chemical vapor deposition are characterized to detail the effect of plasma-surface interactions on nucleation and growth. Transition from α- to β-W is observed as the H2/WF6 flow ratio is decreased from 10/1 to 1/1 in plasma-enhanced deposition; transition from α-W to amorphous W is observed under the same conditions in low-pressure chemical vapor deposition. The temperature coefficient of resistivity varies from 4.9 to 2.0 ppthou/K as the plasma-deposited films switch from α to β phase; the temperature coefficient of resistivity varies from 3.2 to −0.5 ppthou/K as the low-pressure chemically vapor deposited films become amorphous. The increased crystallinity and metastable phase formation in plasma environments are attributable to higher effective surface temperature resulting in enhanced surface mobility and grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99184
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  • 6
    Electronic Resource
    Electronic Resource
    Plasma- and gas-surface interactions during the chemical vapor deposition of tungsten from H2/WF6 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4696-4703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion and neutral species were sampled from a H2/WF6 tungsten deposition atmosphere (with and without plasma enhancement) by a line-of-sight quadrupole mass spectrometer and cylindrical mirror ion energy analyzer. These diagnostics were used to investigate the influence of neutral and ion flux on the resistivity and morphology of α- and β-tungsten films. In all depositions, WF, WF2, and WF6 were the principle tungsten-fluorine species while WF+5 was the primary plasma-generated ion. Variation of α-tungsten film properties with thickness was dominated by impurities and defects incorporated early in the deposition and by domain size. Plasma-enhanced chemical vapor-deposited films exhibited lower resistivity, and higher temperature coefficient of resistivity and domain size compared to low-pressure chemical vapor deposition films. The variation of α-tungsten properties with increasing ion-bombardment energies was consistent with enhanced sputtering and damage production. Low-resistivity small-domain films were deposited at low frequencies while low-energy high-current bombardment conditions were conducive to domain growth. Nucleation and growth of β tungsten required oxygen rather than fluorine impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341254
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  • 7
    Electronic Resource
    Electronic Resource
    Measurement of rotational temperature and dissociation in N2O glow discharges using in situ Fourier transform infrared spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1068-1077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The technique of in situ Fourier transform infrared (FTIR) absorption spectroscopy has been used to determine rotational temperatures and the extent of dissociation of N2 O in a radio-frequency (rf) glow discharge. Measurements were made at 0.65 cm−1 resolution on 13.56-MHz plasmas at 500 mTorr, with an input flowrate of 40 sccm, and powers of 10 and 30 W. Temperature and dissociation information estimates are based upon analysis of P branch rotational lines of the 2ν1 harmonic and ν1 +ν3 combination band of the molecule. Line intensities are corrected for instrument-induced distortion. Under the conditions investigated, rotational temperatures are between 335 and 420 K, and dissociation ranges from 45% to 75%. Both rotational temperature and dissociation increase with rf power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341891
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of Ar+ sputtering on the x-ray photoelectron spectra of plasma-deposited silicon nitride films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3430-3434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of argon-ion sputtering and atmospheric exposure on the composition and structure of plasma-deposited (PD) silicon nitride films were studied using x-ray photoelectron spectroscopy. PD silicon nitride samples were transferred directly from the plasma deposition chamber into the analysis chamber without ambient exposure. Samples exposed to ambient oxidized, with an oxidation rate that depended upon deposition temperature. Ion energies of 500–4000 eV were used to sputter sample surfaces. Preferential sputtering was observed at all energies, with the lower energies creating less compositional and structural modification. Films deposited at lower temperatures exhibited pronounced preferential sputtering of nitrogen, particularly NHx species. Ion milling was found to be unacceptable as a means of surface cleaning PD silicon nitride since even qualitative N:Si composition trends were modified by sputtering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342661
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  • 9
    Electronic Resource
    Electronic Resource
    An in situ study of dissolution and swelling behavior of poly-(methyl methacrylate) thin films in solvent/nonsolvent binary mixtures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 682-688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-element rotating-polarizer ellipsometer (psi-meter) was used for in situ characterization of the thermodynamic and kinetic behavior of poly-(methyl methacrylate), PMMA, thin films (1.2 μm) in solvent/nonsolvent binary mixtures of methyl ethyl ketone/isopropanol (MEK/IPA) and methyl isobutyl ketone/methanol (MIBK/MeOH). Thermodynamic effects were inferred from equilibrium behavior by the degree of swelling and polymer-solvent solubility. A sharp transition between complete solubility and almost total insolubility was observed in a narrow concentration range near 50:50 (by volume) solvent/nonsolvent for both MEK/IPA and MIBK/MeOH. In the insoluble regime, the polymer was found to swell up to three times the initial thickness. At 50:50 MEK/IPA, a temperature decrease from 24.8 to 18.4 °C caused a change from complete dissolution to combined swelling/dissolution behavior and rendered the PMMA film only 68% soluble. Kinetic effects were determined by dissolution and penetration rate measurements. A constant penetration velocity was observed for almost all compositions for both binary solvent mixtures with Case II transport assumptions providing good agreement with experimental results. For MEK/IPA, penetration rates increased with increasing MEK concentration. For MIBK/MeOH, however, a maximum was observed at 60:40 MIBK/MeOH.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339742
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition chemistry and structure of plasma-deposited silicon nitride films from 1,1,3,3,5,5-hexamethylcyclotrisilazane (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 841-848 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nitride films were deposited in an rf glow discharge from various mixtures of NH3, H2, and N2 with 1,1,3,3,5,5-hexamethylcyclotrisilazane (HMCTSZN). Fourier transform infrared spectroscopy, Rutherford backscattering spectroscopy, and proton magnetic resonance spectroscopy, indicate that the films deposited with NH3 are essentially silicon nitride (〈4 at. % C) and contain 25 at. % H , when deposited from dilute HMCTSZN mixtures at elevated rf power. Gas phase neutral mass spectroscopy indicates a relative abundance of NHx radicals produced under these conditions, which actively remove carbon and enhance Si-NH-Si bonding. Films deposited in NH3 /H2 mixtures result in still greater Si–N bonding, since NH3/H2 plasmas are more NHx radical rich than NH3 discharges. Films deposited from H2/HMCTSZN plasmas contain significant carbon concentrations (30–40 at. %), but those formed from dilute HMCTSZN mixtures at elevated rf power are low in H content (21 at. %) and are highly cross-linked due to H abstraction from radicals produced in the discharge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341935
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