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Preparation of crystallized zinc oxide films on amorphous glass substrates by pulsed laser deposition (1996)

Hayamizu, Shunichi ; Tabata, Hitoshi ; Tanaka, Hidekazu ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 787-791

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Zinc oxide (ZnO) films with c-axis orientation have been prepared on glass substrates by pulsed laser deposition with an ArF excimer laser. The fluctuations of c-axis orientation of the ZnO films are evaluated by full width at half-maximum (FWHM) of the rocking curve of the x-ray diffraction. The ZnO films with a FWHM of 1.9° can be obtained on the optimum conditions (substrate temperature of 500–600 °C, O2 gas pressure of 2–6×10−4 Torr) even at a thickness of 200 nm. We have observed the crystallization of the ZnO during film formation by using in situ reflection high energy electron diffraction. It is confirmed that ZnO thin films with a thickness of up to about 50 nm have c-axis orientation on the glass substrates. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.362887

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