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  • 1
    In: International journal of earth sciences, Berlin : Springer, 1999, (2009), 1437-3262
    In: year:2009
    In: extent:18
    Type of Medium: Online Resource
    Pages: 18 , Ill., graph. Darst
    ISSN: 1437-3262
    Language: English
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  • 2
    Online Resource
    Online Resource
    Berlin, Heidelberg : Springer Berlin Heidelberg
    Keywords: Computer science ; Computer Science ; PASCAL ; Compiler ; Minicomputer ; PASCAL ; Compiler
    Type of Medium: Online Resource
    Pages: Online-Ressource
    ISBN: 9783540373742
    Series Statement: Lecture Notes in Computer Science 50
    DDC: 001.6/425
    RVK:
    RVK:
    Language: English
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  • 3
    Online Resource
    Online Resource
    Berlin, Heidelberg :Springer Berlin / Heidelberg,
    Keywords: Brain-Blood-vessels. ; Electronic books.
    Type of Medium: Online Resource
    Pages: 1 online resource (631 pages)
    Edition: 1st ed.
    ISBN: 9783642700545
    DDC: 612/.825
    Language: English
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    European journal of soil science 52 (2001), S. 0 
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Laser-optical measurements and fibre optics are potentially attractive tools for applications in soil science because of their great sensitivity and selectivity and their capabilities for on-line and in situ analysis. We have investigated laser-induced breakdown spectroscopy (LIBS) for the quantitative detection of metal ions on the surface of natural soil samples from two sites (Hohenschulen and Oderbruch, Germany). The LIBS technique allows the spatially resolved investigation of adsorption and desorption effects of ions in soil. A frequency doubled (532 nm) and Q-switched Nd:YAG laser with a pulse duration of 8 ns is focused on the soil surface and induces a plasma. Typical power densities are 150 mJ mm−2. The plasma emission is recorded in time and spectrally resolved by a gateable optical multichannel analyser (OMA). A delay time of about 500 ns between laser pulse and OMA gate was used to resolve single atomic and ionic spectral lines from the intense and spectrally broad light that is emitted by the plasma itself. The dependency of the LIBS signal of a single spectral line on the amount of water in the sample is investigated in detail. The results indicate that quenching of water in the plasma plume reduces the line intensities, while the interaction with aquatic colloids increases the intensity. The two processes compete with each other, and a non-linear correlation between measured line intensities and the amount of water in the sample is obtained. This is verified by a simple computer simulation and has to be taken into account for the quantitative interpretation of LIBS signals, e.g. when absolute concentrations are estimated. In the present investigation natural calcium concentrations 〈 2 μg kg−1 were measured with the LIBS technique in the samples for the two test sites. In addition, measurements were made with dry and water-saturated BaCl2 mixed soil samples, and no significant difference in the detection limit for barium was obtained.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    European journal of soil science 47 (1996), S. 0 
    ISSN: 1365-2389
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Temperate saltmarshes are a potential source of atmospheric methane. We have measured the concentration and emission of methane in typical saltmarsh soils (Salic Fluvisols) and humus-rich saltmarsh soils (Thionic Fluvisols) from the German North Sea coast. We also measured the methane production rates of the latter. The methane content of typical saltmarsh soils reached 12.0 μmol 1−1, although values of 1–4 μmol 1−1 were usual. The sulphate concentrations of the pore-water were about 10 mm, which means sulphate reduction is not limited and methanogenesis would be suppressed. Methane concentrations were generally largest in summer. Independent of the redox potential and the degree of soil development, methane concentrations were smallest in those soils poorest in humus. Methane emission rates were almost zero. In the humus-rich saltmarsh soils, methane concentrations were roughly a thousand times larger than those in typical saltmarsh soils, reaching values of 23 mmol 1−1 The sulphate concentrations of the pore-water were often less than 1 mM, indicating limited sulphate reduction. Methane production was up to 80 μg cm−3 day−1 and was not inhibited when we added sulphate. Methane emission rates reached up to 190 μg m−2 day−1 in summer, with values up to 20 μg m−2 day−1 at other times. The two kinds of saltmarsh soil behave quite differently: the typical saltmarsh soils act as a sink for methane; the humus-rich saltmarsh soils are a source.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1959-1963 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe/Si quantum well layers are selectively grown by low pressure chemical vapor deposition on patterned Si substrates. Transmission electron microscopy (TEM) shows that the growth rate of SiGe in convex corners between different surface planes is at least ten times higher than the growth rate observed on (001) planes. This high growth rate leads to the formation of quantum wires and dots between such facets. Photoluminescence (PL) spectra of square and rectangular patterns, bounded by quantum wires, ranging in size from 300μm down to 500nm are taken. The observed energy shifts of the (001) quantum well PL–peaks are explained by surface diffusion of Ge adatoms into the quantum wires. A surface diffusion model is used to obtain a Ge diffusion length of λ=2.5±0.6 μm at 700°C. Thus, a method for the determination of surface diffusion lengths in strained layer epitaxy is introduced. For SiGe layers grown above the Stranski–Krastanow critical thickness for three dimensional (3D) growth, a competition between the SiGe wires in the interfacet corners and the SK islands on the (001) planes is observed. In squares as large as 2×2 μm2 the SiGe wires lead to a suppression of 3D growth on the (001) plane altogether, as observed by TEM and PL. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1314-1316 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the evolution of AlGaAs/GaAs growth during organometallic chemical vapor deposition on pyramidal recess patterns etched into GaAs {111}B substrates. Cross-sectional atomic force microscopy clearly demonstrates the self-organized growth behavior in the inverted pyramid structures. During AlGaAs deposition, the side corners and the tip of the pyramid sharpen up to a self-limited radius of curvature of less than 10 nm. In addition, vertical Ga-rich AlGaAs quantum wells are formed at these corners. Subsequent GaAs growth results in the formation of GaAs quantum wires along the corners of the pyramid. These wires meet at the tip of the pyramid, forming a quantum dot structure at this point. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Huntington's disease is an autosomal dominant disorder with degeneration of medium size striatal neurones. As the disease evolves, other neuronal populations are also progressively affected. A transgenic mouse model of the disease (R6/2) that expresses exon 1 of the human Huntington gene with approximately 150 CAG repeats has been developed, but GABA concentrations are reported to be normal in the striatum of these animals. In the present study, we analysed the status of GABAergic systems by means of glutamic acid decarboxylase (GAD)67 mRNA in situ hybridization in the brain of R6/2 transgenic mice and wild-type littermates. We show that GAD67 expression is normal in the striatum, cerebellum and septum but decreased in the frontal cortex, parietal cortex, globus pallidus, entopeduncular nucleus and substantia nigra pars reticulata of R6/2 mice. These data, which may, in part, account for the behavioural changes seen in these animals, indicate that at 12.5 weeks of age the pathological features seen in the mice differ from those seen in humans with Huntington's disease.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2183-2185 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report photoluminescence and structural results obtained on asymmetrically strained Si0.7Ge0.3/Si single and multiple quantum wells epitaxially grown by low pressure chemical vapor deposition. Well-resolved peaks were obtained which can be attributed to quantum well excitons and their transversal optical phonon replica. A good correlation between peak properties and structure results was found. From the photoluminescence peak energies a valence band offset of 0.27 eV and an effective hole mass of 0.25 were estimated.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 445-447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of photo- and electroluminescence of SiGe dots buried in Si and compare them with structures containing smooth SiGe layers. The SiGe dot structures were fabricated by low-pressure chemical vapor deposition using the Stranski–Krastanov growth mode (island growth). We show that the localization of excitons in the dots leads to an increase of the luminescence efficiency at low excitation compared to smooth SiGe layers (e.g., quantum wells). At higher excitation the efficiency decreases which is attributed to nonradiative Auger recombination processes in the dots. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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