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  • 1
    Electronic Resource
    Electronic Resource
    Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6514-6518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of indium segregation and hydrogen on the optical and structural properties of InGaN/GaN multiple quantum wells, grown by metalorganic chemical vapor deposition were investigated. Photoluminescence and high-resolution transmission electron microscopy analysis showed that two types of indium-rich regions can be formed in the InGaN well layers. Self-assembled quantum dot-like indium-rich regions were found in the well layer grown at a normal growth temperature. These regions behaved as luminescent centers, showing a maximum indium content at the center of indium-rich region. However, randomly-distributed indium-segregated regions, which formed near the upper interface of the InGaN well layers during the subsequent high-temperature annealing process led to the degradation of the optical properties by generating defects such as misfit dislocations. The use of hydrogen during the growth interruption was found to be very effective in suppressing the formation of indium-segregated regions in the InGaN well layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370368
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  • 2
    Electronic Resource
    Electronic Resource
    Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1647-1649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd=2×1017 cm−3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current–voltage characteristics, showing that high-quality ohmic contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2×10−4 Ω cm2 when annealed at 300 °C for 1 min in a N2 atmosphere. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308527
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