ISSN:
1432-0630
Keywords:
68.55
;
73.40
;
78.65
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00343415
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