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  • 1
    Electronic Resource
    Electronic Resource
    Heavily boron-doped Si layers grown below 700 °C by molecular beam epitaxy using a HBO2 source (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 795-797 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500–700 °C using a HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550–700 °C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 °C without detectable oxygen incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101763
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  • 2
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Diffusion of Si in thin CoSi2 layers' '' [Appl. Phys. Lett. 55, 1804 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1804-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102325
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of Si in thin CoSi2 layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1314-1316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence of Si diffusion in 100 A(ring) layers of CoSi2 grown by room-temperature codeposition and annealing on Si(111) substrates. By monitoring the intensity of the Co MVV and Si LVV Auger peaks, we find a Si-rich surface layer after annealing, in agreement with the results of others. We find that this layer can be removed by chemical etching and re-formed by subsequent annealing. By measuring the intensity of the plasmon energy loss peak associated with the Co L23 VV Auger peak, we conclude that the Si must exist on top of the CoSi2 and we obtain the effective Si overlayer thickness as a function of annealing temperature by calibrating the plasmon loss data against known overlayer thicknesses on unannealed samples. We find similar results on samples grown both with and without the addition of a 10 A(ring) Si cap to prevent pinhole formation in the CoSi2 and we have indications that the same type of diffusion occurs also beneath the native oxide layer on samples that have not had the surface Si removed by chemical etching. In all of the samples studied, Si diffusion was observed to be non-negligible at temperatures on the order of 400 °C, which is well below the point where pinhole formation is first observed. This result suggests that the diffusion does not depend on the presence of observable pinholes as previously thought.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101399
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  • 4
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of the formation of epitaxial CoSi2/Si (111) by a room-temperature codeposition technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 434-436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co and Si have been codeposited on Si (111) substrates near room temperature in a stoichiometric 1:2 ratio in a molecular beam epitaxy system. Annealing of these deposits yields high-quality single-crystal CoSi2 layers. Transmission electron microscopy has been used to examine as-deposited layers and layers annealed at 300, 500, and 600 °C. Single-crystal epitaxial grains of CoSi2 embedded in a matrix of amorphous Co/Si are observed in as-deposited samples, while the layer is predominantly single-crystal, inhomogeneously strained CoSi2 at 300 °C. At 600 °C, a homogeneously strained single-crystal layer with a high density of pinholes is observed. In contrast to other solid phase epitaxy techniques used to grow CoSi2 on Si (111), no intermediate silicide phases are observed prior to the formation of CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99434
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 804-806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A solid phase epitaxy technique has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (103 cm−2 detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550–600 °C. CoSi2 films grown without the Si cap are found to have pinhole densities of 107–108 cm−2 when annealed at similar temperatures. A CF4 plasma etching technique was used to increase the visibility of the pinholes in the silicide layer. This plasma technique extends the pinhole detection resolution to 103 cm−2 and is independent of the pinhole size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99289
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3531-3538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cobalt LMM Auger spectra are observed to undergo significant shape changes as a function of Si overlayer thickness and annealing temperature in Si/CoSi2 /Si heterostructures prepared by codeposition and solid phase epitaxy on Si(111) substrates. The changes are dominated by strong increases of the bulk plasmon loss intensity and shifts in the plasmon loss energy with increasing Si overlayer thickness. These effects can be used to probe the overlayers with electrons generated in the underlying layers. They are used here to measure the thickness of Si overlayers on CoSi2 . We find a linear relationship between the ratio of the plasmon loss peak associated with the Co-L23 VV Auger peak to the Auger peak itself and the known thickness of deposited Si overlayers for thicknesses up to 30 A(ring). Using this calibration, we monitor island formation in annealed Si/CoSi2 /Si and diffusion of Si in CoSi2 /Si. We deduce the formation of islands in the deposited Si overlayers at temperatures of 550 °C for thicknesses less than 30 A(ring). We observe Si diffusion in CoSi2 /Si at temperatures as low as 400 °C. We measure activation energies of 0.52–0.60 eV for the diffusion, as determined from Arhennius plots of the plasmon/Auger data, and conclude that the diffusion most likely proceeds through residual defects in the CoSi2 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342627
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  • 7
    Electronic Resource
    Electronic Resource
    Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4082-4085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p+ layer to 0.89 eV for a sample with a 20-nm-thick p+ layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341315
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  • 8
    Electronic Resource
    Electronic Resource
    The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 629-638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy has been used to examine the localization and crystallographic dependence of Si+1, Si+2, and Si+3 suboxide states at the SiO2/Si interface for (100)- and (111)-oriented substrates with gate oxide quality thermal oxides. The Si+1 and Si+2 states are localized within 6–10 A(ring) of the interface while the Si+3 state extends ∼30 A(ring) into the bulk SiO2. The distribution of Si+1 and Si+2 states shows a strong crystallographic dependence with Si+2 dominating on (100) substrates and Si+1 dominating on (111) substrates. This crystallographic dependence is anticipated from consideration of ideal unreconstructed (100) and (111) Si surfaces, suggesting that (1) the Si+1 and Si+2 states are localized immediately within the first monolayer at the interface and (2) the first few monolayers of substrate Si atoms are not significantly displaced from the bulk. The total number of suboxide states observed at the SiO2/Si interface corresponds to 94% and 83% of a monolayer for these (100) and (111) substrates, respectively. We speculate that the remaining interfacial substrate Si atoms that are not associated with bonding to oxygen are bonded to impurity species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338215
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  • 9
    Electronic Resource
    Electronic Resource
    Optical properties of epitaxial CoSi2 and NiSi2 films on silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2738-2741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the optical constants of epitaxial films of CoSi2 and NiSi2, grown by molecular beam epitaxy on Si(111), in the energy range of 0.9–4.0 eV. The behavior of the optical constants is characteristic of metals: Drudelike in the low energy region and deviating from Drude behavior as interband transitions set in. Interband transitions are found to have already set in at 1 eV. The absorption varies significantly with energy, which has implications for photoresponse studies of internal photoemission in these material systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344217
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  • 10
    Electronic Resource
    Electronic Resource
    Optical constants of thin CoSi2 films on silicon (1990)
    Springer
    Applied physics 50 (1990), S. 177-181 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The optical transmission of CoSi2 films of thickness 2.6–15 nm is measured in the wavelength range 1–20 μm. The optical constants are evaluated by taking into account multiple reflections in the film and by fitting a Drude model. The plasma frequency ωp=5.4−7.6 eV is equivalent to a carrier density n eff=3×1022 cm−3 and one carrier per unit cell. The relaxation frequency of the plasma resonance assumes high values Γ=2 eV near the interface to silicon and decreases into the bulk film over several nanometers. Films grown off-axis from the (111) Si orientation exhibit an enhanced relaxation frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00343415
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