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  • 1
    Publication Date: 2024-01-12
    Description: Maniola butterflies undergo summer dormancy in dry and hot habitats and deposit their eggs only in early autumn when conditions become more favourable for their offspring. Female individuals of this genus are therefore relatively long-lived. For long-lived butterflies adult diet is of particular importance. We tested if added amino acids in nectar substitute fed to the butterflies affected timing of oviposition, fecundity and longevity. A hundred Maniola females were sampled from Mediterranean and Central European populations and made to oviposit under controlled laboratory conditions. Forty individuals were offered sucrose solution with additional amino acids while the remainder were fed with plain sucrose solution. We found that egg-laying strategies and longevity depended on geographic provenance rather than diet. Supplementary amino acids in adult diet did neither prolong lifetime nor increase total egg production. Maniola females from Sardinia started to lay eggs at least 20 days later relative to Central European M. jurtina and lived three times as long. Mediterranean individuals had on average twice the length of reproductive period and lifespan relative to Central European ones, and individuals of Pannonian origin lived longer than Alpine butterflies. Average total egg numbers were 200-350 eggs per female and did not differ significantly between populations. The fact that oviposition strategy could not be altered through diet may indicate that for univoltine butterflies, like Maniola, diet-quality at the adult stage is less important than endogenous factors, or factors the butterflies are exposed to in an earlier developmental stage than the imago. Oviposition strategy closely matched the climatic conditions that prevail in the geographic regions where these butterflies fly.
    Keywords: butterfly ecology ; oviposition ; longevity ; Maniola ; summer dormancy ; nectar amino acids ; Nymphalidae
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 2
    Publication Date: 2024-01-12
    Description: Butterflies of the genus Maniola are known for their large morphological variation, at the inter- as well as intraspecific level. Given the overlap in wing-patterns, habitat selection, and geographic distribution of various Maniola species, genitalia morphology is sometimes the only possibility to tell specimen apart. In this paper we describe diagnostic characters to distinguish different Maniola species by means of their genitalia. Included is also the first detailed description and illustration of the genitalia apparatus of the Sardinian endemic Maniola nurag. Further, we describe two Sardinian individuals with intermediate characteristics between Maniola nurag and Maniola jurtina, and propose that they are hybrids. Further, we shortly discuss the justification of the species status for the island endemics Maniola chia and Maniola cypricola.
    Keywords: Sardinian endemic ; genital morphology ; Maniola nurag
    Repository Name: National Museum of Natural History, Netherlands
    Type: info:eu-repo/semantics/article
    Format: application/pdf
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3314-3318 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric films have been prepared by radio-frequency plasma-enhanced chemical vapor deposition from mixtures of tetramethylsilane with oxygen. The films have been characterized as-deposited and after annealing at 400 °C to determine the thermal stability of their properties. Rutherford backscattering and forward recoil elastic scattering have been used for determination of the composition of the films. Optical properties were characterized by Fourier transform infrared spectroscopy and measurements of the index of refraction and optical gap. The electrical properties were measured in a Si/insulator/metal configuration. It has been found that the index of refraction decreases and the optical gap and dielectric constant increase with increasing oxygen concentration in the gas feed. While the materials did not show a mass or composition loss after annealing, the annealing resulted in a reduction of the dielectric constant of the films. Dielectric constants as low as 3.1 have been obtained after annealing the film deposited from pure tetramethylsilane. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 802-813 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The integration of noble metal electrodes into semiconductor memory devices incorporating ferroelectric or high dielectric constant ε materials is expected to require deposition of a conductive, oxidation-resistant barrier material between the noble metal and the silicon contact. Described is an alternative type of barrier layer structure which is formed as buried, self-aligned layer during oxygen-ambient annealing after noble metal deposition on silicon-contributing substrates. Reactions of Pt(20 nm) and Ir(20 nm) films with substrates of single crystalline silicon (c-Si), polycrystaline silicon (poly-Si), and tungsten silicide (WSix/Si with x=2.4–2.8) were examined after anneals in atmospheric pressure ambients of oxygen or nitrogen at temperatures of 640–700 °C, a temperature range of interest for high-epsilon materials deposition. While Pt(20 nm) films reacted with silicon and WSix/Si during oxygen annealing to form a mixture of Pt silicides and Pt, Ir(20 nm) films on the same substrates did not form any iridium silicides during oxygen annealing. In all cases, unreacted noble metal M was left due to the formation of an oxygen-containing M–O–Si barrier which interfered with the silicidation reaction. In contrast to these results for oxygen annealing, the Pt and Ir films were completely consumed by silicidation reactions during anneals in nitrogen. Qualitative through-film resistance measurements indicated that the M–O–Si barrier layers formed during oxygen annealing were at least moderately conductive for the cases of M=Ir on silicon and M=Ir or Pt on WSi2.8(300 nm)/Si, a prerequisite for the use of these electrode barrier structures in high-density dynamic random access memory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2044-2049 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dissociation of chlorosilanes to microcrystalline silicon and its deposition on a solid substrate in a rf plasma of mixtures of argon and hydrogen was investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of silicon in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net rf power input, and location in the plasma reactor were found to strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and to the role of hydrogen chloride.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2874-2877 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard-carbon films prepared by the rf-plasma decomposition of acetylene have been investigated by high-resolution 13C nuclear magnetic resonance spectroscopy, x-ray photoelectron spectroscopy (XPS), and the H(15Nα,γ)C nuclear resonant reaction. It was found that the ratio of sp2:sp3 bound carbon was 1.6, and that virtually all sp3 carbon atoms are, in fact, bound to one or more hydrogen atoms. Bulk layers contain about 40% hydrogen; however, results of the measurements of the hydrogen concentration, as well as those of XPS, confirm that the composition and properties of these carbon films are a strong function of their distance from the initial growth interface, and are spatially varying over the first 40 nm.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2089-2091 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of Fourier transform infrared (FTIR) absorption spectroscopy, high resolution 13C nuclear magnetic resonance spectroscopy, and hydrogen evaluation by forward recoil elastic scattering (FRES) measurements shows that FTIR cannot be used to determine the carbon hybridization or total hydrogen content of diamondlike carbon films (DLC). FTIR absorption reflects only the optically active hydrogen in the DLC and, using it together with FRES, it can provide an estimate of the unbound hydrogen contained in the films. The fraction of unbound hydrogen can reach values of up to ∼50%.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 803-805 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal–insulator–silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 35 (1974), S. 581-584 
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 35 (1974), S. 581-584 
    ISSN: 0022-3697
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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