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  • 1
    Electronic Resource
    Electronic Resource
    Oxidation enhanced diffusion of boron in silicon at 650–750 °C using steam in the range 1–15 atmospheres (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3115-3120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried boron layers were epitaxially grown on single crystal silicon substrates and subjected to steam oxidation at 650–750 °C and pressures of 1, 5, and 15 atm. The layers were approximately 200 nm thick and capped by 400 nm of undoped silicon. The boron concentration varied from 8×1017 to 4×1018 atoms/cm3. The ensuing enhanced boron diffusion was modeled on the assumption that the oxidation maintained a supersaturation of interstitials at the surface which was proportional to the square root of the oxidation rate. Fully coupled dopant-defect diffusion equations were necessary to accurately model the oxidation enhanced diffusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359996
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of buried Si-SiO2 interfaces on oxidation and implant-enhanced dopant diffusion in thin silicon-on-insulator films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2756-2764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion behavior of phosphorus and boron was used to study point defect kinetics in silicon-on-insulator (SOI) material. Phosphorus marker layers were used to study oxidation enhanced diffusion in bulk and bonded and etched-back silicon-on-insulator (BESOI) material under oxidizing conditions at 750, 800, and 850 °C. An effective interstitial recombination velocity Kox for the buried Si-SiO2 interface in the BESOI material was extracted by fitting the experimentally obtained phosphorus profiles with suprem−iv simulation results. The data can be modeled with a time-independent interface recombination velocity. The same parameter set incorporating this extracted recombination velocity was used to accurately model the implant enhanced diffusion of boron marker layers at 750 and 800 °C in thin SOI films, implying the recombination velocity is independent of the interstitial supersaturation. The expression Kox/DI=4.7×10−3 exp(+1.34/kT) fits this work and also a wide range of literature results at higher temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357539
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  • 3
    Electronic Resource
    Electronic Resource
    Species and dose dependence of ion implantation damage induced transient enhanced diffusion (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2352-2363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The implant species and dose effects of ion implantation, including crossing the amorphization threshold, on the transient enhanced diffusion (TED) behavior of a boron marker layer in silicon have been studied. It has been found that for lower implant doses, TED is species independent. However, for higher implanted doses, the dependence of TED on species becomes very significant. It has been found that at these higher doses, including amorphizing doses, P implants cause more TED than either Si or As implants. This result is explained based on the fully coupled diffusion mechanism of the impurity dopants where dopants diffuse by temporarily pairing with point defects. Additionally, both point defect clusters and extended defects such as dislocations significantly affect the dopant profile evolution of both the implanted profile and the buried marker layer. By modeling these effects, the experimental results have been simulated and a consistent parameter set has been found to fit the data to a reasonable extent. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361162
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  • 4
    Electronic Resource
    Electronic Resource
    Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3593-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical deactivation of arsenic in silicon has been studied with regard to its effect on enhanced diffusion. Experimental structures consist of a buried boron layer as an interstitial detector, and a fully activated arsenic doped laser annealed surface layer. As these structures are annealed at temperatures between 500 and 750 °C, arsenic in the surface layer deactivates and we observe enhanced diffusion of the buried boron layer. A study with time reveals that the enhanced diffusion transient and the deactivation transient are similar, indicating a strong correlation between both phenomena. The dependence on concentration shows a maximum enhanced diffusion for concentrations between 3 and 4×1020 cm−3 of initially active arsenic. Above these concentrations, the large supersaturation of interstitials nucleates dislocation loops and lowers the overall enhancement measured in the buried boron layer. Temperature data show that even for temperatures as low as 500 °C, enhanced diffusion is observed. These data are convincing evidence that the enhanced diffusion observed is due to the deactivation of arsenic and provides important insights into the mechanisms of deactivation. We propose that arsenic deactivation forms small clusters of various sizes around a vacancy with the injection of an associated interstitial into the bulk. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368593
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  • 5
    Electronic Resource
    Electronic Resource
    Vacancy generation resulting from electrical deactivation of arsenic (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3575-3577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., Asn-v) to the deactivation process is reported. The average number of arsenic atoms per complex, n¯(approximately-greater-than)2, was determined by comparing the observed complex concentrations with those of the deactivated arsenic inferred from Hall-effect measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115322
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  • 6
    Electronic Resource
    Electronic Resource
    Dose loss in phosphorus implants due to transient diffusion and interface segregation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For implanted phosphorus in the dose range of 5×1013/cm2–4×1014/cm2, up to half the implanted dose may be lost during low thermal budget anneals due to transient diffusion and anomalous segregation at the Si–SiO2 interface. The phosphorus atoms, rendered mobile by the implant damage, stick in the oxide near the interface where they are electrically inactive and can be removed by stripping the surface oxide. Such a dose loss needs to be accounted for in a typical device fabrication process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114543
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  • 7
    Electronic Resource
    Electronic Resource
    A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4745-4755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of silicon interstitial generation, recombination, and diffusion in floatzone (FZ) and Czochralski (CZ) silicon were studied during oxidation at 1100 °C using thin silicon membranes as test structures. One side of the membrane was oxidized to inject interstitials and the other side was covered with films of pad-oxide and silicon nitride. The interstitial concentration was monitored at both sides of the membrane simultaneously to determine the interface and transport kinetics of interstitials. The interstitial supersaturation at the oxidizing side was found to be insensitive to both the thickness variation and to the interface condition of the other side of the membrane. A model for this effect is proposed. At the interface opposite the oxidizing side, a delayed buildup of interstitials was observed. Using these results for FZ Si and assuming that there was no bulk recombination, an effective interstitial diffusivity of 9×10−10 cm2/s and an effective interface recombination rate of 3×10−7 cm/s for a silicon/pad-oxide interface were obtained. Interstitial transport across the CZ Si membranes during oxidation was slower than that across FZ membranes. The parameters extracted from these studies have been used to successfully model 2D dopant diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339028
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  • 8
    Electronic Resource
    Electronic Resource
    Model for bulk effects on Si interstitial diffusivity in silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Literature values for the diffusivity of the silicon interstitial or interstitialcy, I, range over several orders of magnitude and have activation energies between 1 and 4 eV. We propose a model for bulk trapping effects on the I diffusivity which provides a consistent explanation for the observed discrepancies. It reconciles the effects of different materials (float-zone, Czochralski, and epitaxial silicon) and processes (diffusion and gettering) on the apparent value of the I diffusivity. New experimental results which directly indicate substantial bulk effects in different types of silicon support the validity of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98996
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  • 9
    Electronic Resource
    Electronic Resource
    Anomalous co-diffusion effects of germanium on group III and V dopants in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 471-473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous diffusion effects are observed when germanium is co-diffused with phosphorus, boron, or arsenic in inert or oxidizing ambients. The germanium, an uncharged column IV dopant with a covalent radius close to that of silicon, appears to alter the point defect population in the silicon lattice. During oxidation, the usual oxidation enhanced diffusion is not observed when Ge is present in the lattice. The anomalous tail diffusion of high-concentration phosphorus is also reduced when Ge is present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99447
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  • 10
    Electronic Resource
    Electronic Resource
    Silicon self-diffusion under extrinsic conditions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4328-4330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both n- and p-type backgrounds. This is direct evidence of the existence of both negatively and positively charged native point defects in Si. We use a simple model involving three charge states to explain the data, which yield the relative contributions of these charge states to the overall self-diffusion coefficient and the locations of the deep levels they introduce in the band gap. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425953
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