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  • 1
    Electronic Resource
    Electronic Resource
    Impact of molecular orientation on thermal conduction in spin-coated polyimide films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1925-1931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polymer films are serving as passive regions in fast logic circuits and as active regions in organic optoelectronic devices, such as light-emitting diodes. Recent data illustrated the strong anisotropy in the thermal conductivity of polyimide films of thickness near 1 μm, with the in-plane value larger by a factor of approximately six. This manuscript extends previous theoretical work on heat conduction in stretched bulk polymers to model the conductivity anisotropy in spin-coated polymer films. Predictions are based on the standard deviation of the angle of molecular orientation with respect to the film in-plane direction, which can be investigated using birefringence data, and the expected conductivity anisotropy in a material with perfectly aligned chains. The modeling and previous data indicate that the anisotropy factor could increase to a value larger than 10 for polyimide films much thinner than 1 μm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370989
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental investigation of thermal conduction normal to diamond-silicon boundaries (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1385-1392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passive chemical-vapor-deposited diamond layers have the potential to improve thermal conduction in electronic microstructures because of their high thermal conductivities. The thermal resistances for conduction normal to the boundaries of diamond layers, which must be small in order to realize this potential, have not been measured. This research develops two independent experimental methods that measure the total thermal resistance for conduction normal to diamond layers thinner than 5 μm on silicon substrates, yielding an upper bound for the thermal resistance of the diamond-silicon boundary. The data for layers as thin as 0.2 μm agree with predictions that account for phonon scattering on layer boundaries and couple the local scattering rate in the diamond to the grain size. The agreement lends support to the conclusion that the effective diamond-silicon boundary resistance is dominated by a highly localized volume resistance in the diamond near the interface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358950
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  • 3
    Electronic Resource
    Electronic Resource
    Phonon scattering in silicon films with thickness of order 100 nm (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3005-3007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Although progress has been made in the ab initio simulation of lattice dynamics in semiconducting crystals, information about the relaxation of nonequilibrium lattice vibrations remains incomplete. This work studies the relaxation times of room-temperature thermal phonons through measurements of thermal conduction along monocrystalline silicon films of thickness down to 74 nm. A repetitive oxidation and etching process ensures that the purity and crystalline quality of the films are comparable with those of bulk samples. Phonon-interface scattering reduces the thermal conductivity by up to 50% at room temperature. The data indicate that the effective mean-free path of the dominant phonons at room temperature is close to 300 nm and thus much longer than the value of 43 nm predicted when phonon dispersion is neglected. This study indicates that a broad variety of lattice transport characteristics for bulk silicon can be obtained through measurements on carefully prepared silicon nanostructures. The present data are also valuable for the thermal simulation of silicon-on-insulator (SOI) transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123994
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  • 4
    Electronic Resource
    Electronic Resource
    Phonon-boundary scattering in thin silicon layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1798-1800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature fields in microdevices made from silicon-on-insulator (SOI) wafers are strongly influenced by the lateral thermal conductivity of the silicon overlayer, which is diminished by phonon scattering on the layer boundaries. This study measures the thermal conductivity of single-crystal silicon layers in SOI substrates at temperatures between 20 and 320 K using Joule heating and electrical-resistance thermometry in microfabricated structures. Data for layers of thickness between 0.4 and 1.6 μm demonstrate the large reduction resulting from phonon-boundary scattering, particularly at low temperatures, and are consistent with predictions based on the phonon Boltzmann transport equation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119402
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal conduction in metallized silicon-dioxide layers on silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1629-1631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vertical thermal conductivities of thermally grown (TG) and chemical vapor deposited (CVD) silicon-dioxide layers 20 to 200 nm thick are measured using a simple, noncontact photothermal technique. The conductivities of TG and CVD layers are less by as much as 18% and 30%, respectively, than the conductivity of bulk fused silicon dioxide. No significant thickness dependence is observed. The thermal boundary resistance between the oxide layers and silicon is shown to be negligibly small. The boundary resistance of gold layers sputtered directly onto TG oxide is considerably larger than that of gold layers evaporated on TG oxide with a 20-nm chromium adhesion layer, and is comparable to internal resistances of the oxide layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112933
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal conduction normal to diamond-silicon boundaries (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3134-3136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Passive diamond layers fabricated using chemical vapor deposition can improve thermal conduction in electronic microstructures. The benefit of using diamond depends strongly on the thermal boundary resistance between active semiconducting regions, where heat is generated, and the diamond. Two independent experimental methods measure the total thermal resistance for conduction normal to 0.2, 0.5, and 2.6 μm thick diamond layers deposited on silicon, providing an upper bound for the effective silicon-diamond boundary resistance. The data agree with predictions that couple the local phonon scattering rate in the diamond to the grain size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113625
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  • 7
    Electronic Resource
    Electronic Resource
    Intrinsic superconducting radiation detector (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2862-2864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel radiation detector, the Intrinsic Superconducting Radiation Detector (ISRD), is proposed. It employs the temperature dependence of the critical current of high Tc superconducting films to determine the detector temperature change caused by incident radiation and operates almost exclusively in the superconducting state. The ISRD has the potential to be a phonon-noise-limited thermal detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109182
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  • 8
    Electronic Resource
    Electronic Resource
    Refraction contrast imaging with a scanning microlens (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3589-3591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate subwavelength spatial resolution with a scanning microlens operating in collection mode with a large-area detector. Optical contrast is created by refraction of off-axis light rays at angles larger than the maximum collection angle. With a microfabricated silicon microlens 10 μm in diameter, we measure spatial resolution due to refraction contrast of λ/4.3 at a wavelength of λ=10.7 μm. A model based on ray tracing is developed to explain our result, and we show that lens diameter and index of refraction limit resolution for large emission and collection angles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377318
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  • 9
    Electronic Resource
    Electronic Resource
    Near-field infrared imaging with a microfabricated solid immersion lens (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2109-2111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report imaging in the infrared with a microfabricated solid immersion lens. The integrated 15-μm-diameter lens and cantilever are fabricated from single-crystal silicon and scanned in contact with a sample to obtain an image. We demonstrate a focused spot size of λ/5 and an effective numerical aperture of 2.5 with λ=9.3 μm light. The total power transmitted through the lens is a factor of 103 greater than through a metal aperture giving the same spatial resolution. Two 1.0 μm holes in a metal film separated by 3.0 μm are imaged with the solid immersion lens in transmission and shown to be resolved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313368
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  • 10
    Electronic Resource
    Electronic Resource
    Measurement of ballistic phonon conduction near hotspots in silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3331-3333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fourier law for lattice heat conduction fails when the source of heat is small compared to the phonon mean free path. We provide experimental evidence for this effect using heating and electrical-resistance thermometry along a doped region in a suspended silicon membrane. The data are consistent with a closed-form two-fluid phonon conduction model, which accounts for the severe departure from equilibrium at the hotspot. The temperature rise exceeds predictions based on the Fourier law by 60% when the phonon mean free path is a factor of 30 larger than the resistor thickness. This work is improving the constitutive modeling of heat flow in deep-submicron transistors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371536
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