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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 81 (1977), S. 2480-2483 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 3577-3581 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 362-364 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be ascribed to the formation of AsxSy phases which grow on an oxide-free GaAs surface. While one of these phases is akin to As2S3, another shows significant in-plane S—S bonding. Raman experiments indicate that the band bending on this disulfide- terminated surface has been reduced to 0.12 eV.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1931-1933 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present Raman scattering data from GaAs samples whose surfaces had been treated with thin films of sodium sulfide nonahydride (Na2S⋅9H2O). Raman scattering provides a quantitative, contactless means of measuring the reduced barrier height associated with decreased density of GaAs surface states. For GaAs samples doped at levels of n≈1018 cm−3, the barrier height is reduced to 0.48±0.10 eV.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4452-4453 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature Raman spectra from a single-crystal-like film of YBa2Cu3O7−y fabricated by pulsed laser deposition are compared with similar spectra of a single crystal of YBa2Cu3O7−y. The comparison shows that not only is the axis perpendicular to the plane of the film, but that in addition the a-b axes are well oriented in the film plane. The data also show that the film is spatially uniform with respect to this orientation.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of Y1Ba2Cu3Ox with superconducting transition temperature (Tc) near 90 K have been prepared by a laser deposition technique. We show that films prepared on sapphire, lithium niobate, and strontium titanate under identical processing conditions exhibit different electrical characteristics. The film surfaces, interfaces, and crystallinity have been studied by a number of analytical techniques. We conclude that the substrate influences the film properties primarily in three ways: the thermal expansion mismatch introduces cracks in the film, the interface reaction changes the film composition, and the substrate lattice influences the crystallographic orientation of the film.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2381-2383 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature Raman spectrum of YBa2Cu3O7−x is sensitive both to stoichiometry and to the transition from the semiconducting to the superconducting state as a function of oxygen annealing. In particular, it is shown that a good quality film with a Tc of ∼90 K and a sharp resistivity transition has not been produced if the frequency of the O(1) stretch along the c axis shifts from 500 cm−1 to lower frequencies. In this paper, two types of processing failures are illustrated: (1) lack of sufficient oxygen and (2) incorrect stoichiometry. No attempt has been made to predict Tc from the Raman data for less than optimum films.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1103-1110 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of local crystal orientation with micron spatial resolution is of prime importance in understanding the dynamics of crystal growth processes with potential for device applications. Examples of such processes are laser annealing, lateral epitaxial growth over oxides, and molecular-beam-epitaxial growth over structured substrates. We present here a nondestructive technique for obtaining such information based on polarization selective Raman scattering from near-diffraction limited O(1 μm) regions of the sample. Depth resolution is limited by the optical penetration depth at the laser wavelength, which is on the order of 1.0 μm for Si at visible wavelengths. By rastering the sample with respect to the probe laser beam, maps of the local crystal orientation can be obtained. Abrupt changes in crystal orientation at grain boundaries are readily apparent. This paper details the experimental apparatus and the method for extracting local crystal orientation information for the particular case of Si. Experiments on single crystals of known orientation are presented which confirm our theoretical predictions and serve to calibrate the technique. Practical examples of mapping of laser annealed silicon-on-oxide structures are given. The analysis shows the loss of the lateral epitaxial seed, with many grains exhibiting 〈110〉 surface normals, in agreement with qualitative results obtained from a destructive selective chemical-etching procedure. Signal intensities are such that orientation information at a single point can be recorded in less than 30 s, thus providing the potential for a real time in situ monitor of slow growth processes.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 586-588 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe chemical modifications of GaAs surfaces which produce robust selenium layers that significantly enhance the electronic properties of the surface. The terminating layers are produced by depositing elemental selenium on GaAs surfaces under alkaline conditions followed by conversion to selenide and selenate using sodium sulfide. These selenium phases are more stable against photo-oxidation than their sulfide counterparts. On the chemically modified surface, photoluminescence is enhanced 400× and Raman spectroscopy indicates that surface band bending has been reduced to ∼0.1 eV. X-ray photoelectron spectroscopy reveals significant AsSe bond formation at the surface and a complicated interfacial structure with selenium present in oxidation states varying from 2− to 4+.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Chemical Kinetics 6 (1974), S. 787-800 
    ISSN: 0538-8066
    Keywords: Chemistry ; Physical Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The kinetic equations for an 81-reaction model of a photochemical smog chamber have been solved using a complete numerical integration as well as a quasi-steady-state approximation (QSSA) procedure. The two sets of results differ markedly in their prediction of experimentally significant factors such as the hydrocarbon depletion rate and the ozone and (NO)x peaking times. The sources of the discrepancy are traced to the fact that the assumed steady-state conditions were not satisfied, leading to errors in the concentrations of intermediate radicals which in turn affect critical rates in the reaction model.The occurrence of such discrepancies in various types of reaction models, and with different QSSA strategies, is discussed, and it is concluded that the extent of such errors in QSSA calculations cannot be reliably predicted. Their impact on conclusions regarding reaction mechanisms and rate constants can surpass uncertainties in experimental data; conversely the credibility of predictions derived through QSSA calculations becomes highly suspect. Since recently devloped methods for complete numerical integration of systems of kinetic equations are now available, it is recommended that these be adopted in future work, and that the use of QSSA be abandoned.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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