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  • 1
    Electronic Resource
    Electronic Resource
    Schottky-barrier fluctuations in Pb1−xSnxSe infrared sensors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7138-7143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Pb1−xSnxSe layers have been grown on Si substrates, and Schottky-barrier infrared sensors were fabricated in the layers using Pb blocking contacts. The observed current–voltage characteristics (saturation currents j0 and ideality factors n) as a function of temperature are quantitatively explained with a fluctuation model of the barrier heights [J. H. Werner, W. Güttler, J. Appl. Phys. 69, 1991 (1522)]. The amount of the mean barrier fluctuation σ, which is typically 10–30 meV, depends on the layer quality and fabrication procedure. Higher σ causes higher j0 with increasing saturation values at low temperatures. In addition, the fluctuations cause high n(〉2) values at low temperatures. Layers with improved structural quality (higher mobilities and lower threading dislocation densities) lead to lower barrier fluctuations and, therefore, to increased sensitivities. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363735
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  • 2
    Electronic Resource
    Electronic Resource
    Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1911-1916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It is found that on Si(111) the orientation of the IV-VI layer can by varied from (100) at 200 °C to (111) at 400 °C substrate temperature. On Si(100), only (100)-oriented layers were obtained for the whole temperature range. (100)-oriented layers with thicknesses above 0.5 μm were cracked due to thermally induced mechanical strain on cooldown to room temperature. This strain cannot be relaxed by dislocation glide in the first glide systems as it is the case for (111)-oriented layers. The structural quality of (100)-oriented PbSe layers on Si(100) and Si(111) is inferior compared to layers grown with an intermediate BaF2/CaF2 or CaF2 buffer layer. This implies that the covalent/ionic PbSe/Si interface seems to impede high-quality epitaxy, contrary to the well known ionic/ionic IV-VI/IIa-fluoride interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361076
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  • 3
    Electronic Resource
    Electronic Resource
    Multilayer polyimide film substrates for interconnections in microsystems (1999)
    Springer
    Microsystem technologies 5 (1999), S. 166-168 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  Currently there is a great interest in flexible substrates for their use in the packaging of semiconductors. They allow high packaging density and permit mechanical motion of the components, if necessary. This paper describes a new substrate material which possesses a high flexibility and which can be used for the realization of interconnection cables and MCM-D. These substrates are not only highly flexible but also mechanically stable, chemically inert and can be produced with the same processes as those for rigid substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050158
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