Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 93-95
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the results of an experimental study of the diffusion of phosphorus in Si0.7Ge0.3 alloys for temperatures between 800 and 1050 °C. When the phosphorus concentration is lower than the intrinsic carrier concentration at the diffusion temperature, the diffusion has a simple Fickian behavior. The corresponding intrinsic diffusivity has an activation energy of 1.62 eV. On the other hand, at high concentration, the diffusion behavior of P in SiGe is similar to what is observed in pure Si, with concentration profiles exhibiting "kink and tail'' shapes. This suggests that the diffusion mechanisms are similar in both materials.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105534
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