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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4760-4769 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-insulator layers produced by the processes of oxygen implantation into single-crystal silicon substrates, zone melt recrystallization of deposited polysilicon films, and silicon epitaxy on sapphire substrates have been examined by an improved x-ray-diffraction technique. The technique incorporates a position-sensitive x-ray detector placed on the 2θ arm of a conventional double-crystal diffractometer, thus allowing the measurement of scattered x-ray intensity in both the incident and diffracted x-ray beam angles simultaneously. X-ray scattering intensity maps plotted in k space reveal the relative strain and mosaic spread of the silicon overlayers with respect to the (001) silicon substrates. Oxygen-implanted films and graphite strip recrystallized films exhibit mosaic spreads (〈±0.08° and ±0.05°, respectively) approaching that of bulk single-crystal Si. The electron-beam-recrystallized films exhibit significantly larger mosaic spreads (≈±0.52°). These silicon overlayer films all exhibit similar perpendicular strain values with an average of approximately 0.08%. Silicon layers produced by both zone melt recrystallization techniques contain a preferential tilt of the diffraction planes along the recrystallization scan direction with respect to the underlying (001)-oriented silicon substrate. Silicon-on-sapphire samples exhibit both a large mosaic spread (±0.18°) and a large perpendicular strain (0.13%). These x-ray results are consistent with crystalline data taken by backscattered electron images and Rutherford ion backscattering.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Three potential methods for evaluating the surface tritium content of the TFTR vacuum vessel are described, each based on a different technique for measuring the in situ beta emission from tritium. These methods should be able to provide both a local and a global assessment of the tritium content within the top ≈1 μm of the inner wall surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3734-3741 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions necessary for obtaining both the maximum topographical image contrast and the maximum insensitivity to ion induced damage using ion-beam induced charge microscopy are presented and interpreted in terms of existing energy loss and damage theory. Ion-beam induced charge images and pulse-height spectra which are measured from a Sandia SA3002 memory device using MeV H+, H+2, and 4He+ ions with a range of incident energies are used to characterize these optimum experimental conditions. It is shown that ions which are stopped within the device depletion layers generate charge pulses which are much less sensitive to ion induced damage than longer range ions which are stopped in the device substrate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 517-519 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized damage production in both (InGa)As/GaAs and Ga(AsP)/GaP strained-layer superlattices (SLS's) for fluences sufficient to induce compositional disordering at three different implant temperatures. Dramatically different implant temperatures are required to produce similar defect distributions between the two SLS systems. Implants at lower temperatures [80 K for the (InGa)As/GaAs system, 300 K and below for the Ga(AsP)/GaP system] exhibit amorphous zones at depths consistent with the predictions of ion range codes; while implants at elevated temperatures [25 °C in (InGa)As/GaAs, 400 °C in the Ga(AsP)/GaP system] exhibit greatly reduced damage levels characterized mainly by extended defects.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3631-3640 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized the effects of Be+ implantation and controlled-atmosphere annealing on the structure of Ga(AsP)/GaP strained-layer superlattices (SLSs). Damage and strain distributions within the implanted layers were examined by cantilever-beam bending measurements, double-crystal x-ray rocking curves, and a variety of ion-channeling techniques. Implantation-induced displacement damage produces additional stress in the SLS, in this case reaching 4.5×109 dyn/cm2, a value comparable to that of the built-in stresses in these SLSs. The depth distribution of ion damage as measured by ion channeling agrees well with the predictions of the trim code, although substantial recovery occurs during the room-temperature implant. Rocking curve analysis indicates that the interlayer strain in the SLS is retained despite the ion damage, and that the ion damage can be modelled as an independent additional source of strain in the as-implanted structure. The linear expansion of the layers due to point defect generation for the 1×1015 Be/cm2 implant is determined to be approximately 0.3% by all three techniques. After controlled-atmosphere annealing at the nominal SLS growth temperature, both the x-ray and ion-channeling measurements indicate removal of the implant damage with the as-grown strain retained and no resolvable intermixing of the layers in the SLS. These results demonstrate that ion-implantation technologies developed for bulk semiconductors can successfully be applied to strained-layer superlattice systems.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2786-2788 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x-ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C-induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard's law.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 2471-2474 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 285 (1978), S. 241-243 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The projectile charge state dependence of ArK x-ray production in collisions with Cu11+ through Cu22+ions has been investigated at ∼1 MeV/amu. A distinct change in the behaviour of the cross section as a function of charge stateq was observed forq≧19 where CuL shell vacancies are brought into the collision. The assumption that the vacancy production is predominantly due to 2pσ-2pπ electron promotion via rotational coupling leads to a consistent description of the data.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1572-9591
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Electrochemical cells constructed with a thin Pd or Ti foil electrode mounted at one wall of the cell have been used both to test for the existence of “cold fusion” and to measure directly D∶Pd loading ratios in an operating cell. The first type of experiment used a surface-barrier particle detector positioned a few millimeters from the foil to provide a very sensitive monitor for possible fusion-generated protons at 3.02 MeV. The detection limit for this arrangement is estimated to be 10−24 fusions/deuterium/s, assuming a bulk fusion effect. These experiments included cells with 5- and 25-μm-thick Pd foils, 10-μm Ti foils, parallel experiments with 0.1M LiOD (heavy water) in one cell and LiOH (light water) in another, current densities up to 0.5 A/cm2, and run times as long as 22 days. No evidence for fusion products was seen. The second type of experiment using these cells, both as an adjunct to the fusion tests and to provide new information, was the use of external beam nuclear reaction analysis to monitor directly the loading and unloading of deuterium in the foil of an operating cell. Using a 1.5-MeV3He ion beam in air, the deuterium in the outer 2 μm of the exposed Pd foil was measured for the first time using the D(3He,p) nuclear reaction. The maximum D∶Pd ratios observed using this technique were 0.8–0.9.
    Type of Medium: Electronic Resource
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