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  • 1
    Electronic Resource
    Electronic Resource
    Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4139-4141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled growth in combination with prepatterning yields ordered lines of Ge islands on a planar Si (001) surface. The self-assembled Ge nanostructures are grown on top of a 15-period Si/SiGe superlattice, which is deposited on a prepatterned Si substrate. The pattern consists of 10 nm deep trenches with a period of 250 nm. The superlattice translates the surface modulation of the substrate into a strain-field modulation at the growth front of the superlattice. This strain field modulation provides the template for the ordered nucleation of self-assembled Ge islands. Our method gives rise to the long-range ordering of perfectly passivated nanostructures and can in principle be applied to any other strained material system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326842
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1279-1281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature epitaxial growth of Si–Ge heterostructures opens possibilities for synthesizing very small and abrupt low-dimensional structures due to the low adatom surface mobilities. We present photoluminescence from Ge quantum structures grown by molecular-beam epitaxy at low temperatures which reveals a transition from two-dimensional to three-dimensional growth. Phononless radiative recombination is observed from 〈105〉 faceted Ge quantum dots with height of approximately 0.9 nm and lateral width of 9 nm. Postgrowth annealing reveals a systematic blueshift of the Ge quantum dot's luminescence and a reduction in nonradiative recombination channels. With increasing annealing temperatures Si–Ge intermixing smears out the three-dimensional carrier localization around the dot. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430508
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4341-4343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current–voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332817
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of overgrowth temperature on the photoluminescence of Ge/Si islands (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2509-2511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge/Si islands grown with molecular-beam epitaxy at 630 °C are overgrown with Si at different temperatures Tcap, and their photoluminescene spectra are recorded. Both the island-related and wetting-layer-related energy transitions redshift with lowered Tcap, which is explained by reduced material intermixing. The mandatory growth interruption, which is introduced during the temperature drop, causes island ripening and shifts the island (wetting layer) photoluminescence peaks slightly to lower (higher) energies. The growth interruption quenches the quantum efficiency of the wetting layer by more than an order of magnitude, whereas the island-related photoluminescence intensity even slightly increases. The island's superior resistance against growth interruptions, and hence interface contamination, is explained by effective carrier localization in the Ge nanostructures. Room-temperature photoluminescence is reported for Ge islands overgrown at 460 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318729
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense photoluminescence (PL) originating from single layers of germanium hut clusters grown on silicon (001) is investigated using PL spectroscopy. We propose that the luminescence originates from phononless recombination within a spatially indirect, type-II neighboring confinement structure. Enhanced no-phonon (NP) luminescence is attributed to exciton localization at the Ge/Si interfaces. The PL intensity is sensitive to the growth temperature during interface formation, as well as to post-growth thermal annealing, illustrating the influence of atomic-level Si–Ge intermixing on exciton localization and NP enhancement. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405148
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  • 6
    Electronic Resource
    Electronic Resource
    Differenzierte Therapie der funktionellen Sterilität am Beispiel von 100 Schwangerschaftsinduktionen (1981)
    Springer
    Archives of gynecology and obstetrics 232 (1981), S. 644-645 
    Details
    ISSN: 1432-0711
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02429742
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