ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report an extensive study of the TiW/GaAs interface after rapid thermal annealing between 750 and 1050 °C. Characterization of the interface was performed by secondary ion mass-spectroscopy (SIMS), Auger, Rutherford backscattering spectroscopy (RBS), x-ray diffraction, transmission electron microscopy, and electrical measurements. Schottky barrier heights extracted from I-V and C-V data show a continuous increase with annealing temperatures up to 950 °C. The reverse I-V measurements exhibit a transition from tunneling to avalanche breakdown. SIMS, Auger, and RBS show significant motion of the Ti, resulting in surface accumulation, as well as Ti diffusion into the GaAs substrate. Interface doping by Ti produces an artificial enhancement of the Schottky barrier height.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343789
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