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  • 1
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    Development of a Novel Biosensor Using Cationic Antimicrobial Peptide and Nickel Phthalocyanine Ultrathin Films for Electrochemical Detection of Dopamine (2013)
    Hindawi
    Details
    Publication Date: 2013-03-07
    Description: The antimicrobial peptide dermaseptin 01 (DS 01), from the skin secretion of Phyllomedusa hypochondrialis frogs, was immobilized in nanostructured layered films in conjunction with nickel tetrasulfonated phthalocyanines (NiTsPc), widely used in electronic devices, using layer-by-layer technique. The films were used as a biosensor to detect the presence of dopamine (DA), a neurotransmitter associated with diseases such as Alzheimer's and Parkinson's, with detection limits in the order of 10−6 mol L−1. The use of DS 01 in LbL film generated selectivity in the detection of DA despite the presence of ascorbic acid found in biological fluids. This work is the first to report that the antimicrobial peptide and NiTsPc LbL film exhibits electroanalytical activity to DA oxidation. The selectivity in the detection of DA is a fundamental aspect for the development of electrochemical sensors with potential applications in the biomedical and pharmaceutical industries.
    Print ISSN: 1687-8760
    Electronic ISSN: 1687-8779
    Topics: Chemistry and Pharmacology
    Published by Hindawi
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  • 2
    Electronic Resource
    Electronic Resource
    Improvement in the properties of a-SiGe:H films: Roles of deposition rate and hydrogen dilution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4622-4630 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device quality a-SiGe:H thin films have been deposited by radio-frequency plasma-assisted decomposition of silane and germane diluted with and without hydrogen. Improvement in structural and electronic properties have been achieved employing low deposition rate and high hydrogen dilution. It has been observed that low deposition rate can reduce the preferential attachment of H to silicon throughout the alloy region while the beneficial effect of hydrogen dilution is more effective in a low band gap region (Eg≤1.40 eV). The photoconductivities of the good quality a-SiGe:H alloy films under white light illumination (50 mW/cm2) are 1.34×10−4 S cm−1 and 1.9×10−5 S cm−1 at the optical gaps of 1.51 and 1.35 eV, respectively. The changes in midgap defect density and tail states have been correlated with the photoconductivities of the samples deposited under different conditions. An attempt has been made to explain the results from the growth kinetics of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352756
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of Auger lifetime in heavily doped Hg1−xCdxTe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6642-6644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression for Auger lifetime as a function of temperature has been derived for a heavily doped Hg1−xCdxTe in the presence of a nonparabolicity of band structure, band gap narrowing, and carrier degeneracy. It is utilized to study the variation of Auger lifetime with temperature through numerical analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355106
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  • 4
    Electronic Resource
    Electronic Resource
    Thermally enhanced frequency upconversion in Nd3+-doped fluoroindate glass (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4498-4501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiphonon assisted frequency upconversion was observed in a Nd3+-doped fluoroindate glass pumped at 866 nm. A near-infrared upconverted emission at 750 nm with a peculiar linear dependence with the laser intensity was observed and explained. The intensity of the upconverted emission experienced a 40-fold enhancement when the sample's temperature was varied from 298 to 498 K. A rate equation model that includes light pumping and multiphonon absorption via thermally coupled electronic excited states of Nd3+ was used, describing quite well the experimental results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410326
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  • 5
    Electronic Resource
    Electronic Resource
    Violet and blue light amplification in Nd3+-doped fluoroindate glasses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6782-6785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optical gain at 382 and 414 nm from Nd3+-doped fluroindate glasses after excitation with lasers operating either at 583 or 532 nm. Stimulated emission due to a frequency upconversion process results in increase of the emitted violet and blue light intensity and emission line narrowing. Large optical gain is measured by pump-probe spectroscopy using samples with various Nd3+ concentrations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370194
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  • 6
    Electronic Resource
    Electronic Resource
    Some analyses of potential profiles of forward-biased high-low junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2496-2501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model calculation for the variation of the normalized potential against the normalized position for a forward-biased, below 2 thermal voltage, high-low junction has been made through numerical computations of Poisson's equation. The model is oriented to a junction with a sufficiently large doping difference between the two sides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357022
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of PrAg under pressure (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2025-2029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present interband optical conductivity and oscillator strength calculations of PrAg within the linear muffin-tin orbital formalism in the atomic sphere approximation. We have compared the optical spectra for both the ferromagnetic and paramagnetic phases at normal pressure and found that exchange interaction has considerable influence on its optical properties, thereby ascertaining the ferromagnetic nature of PrAg. The oscillator strength or the transition probability plays a vital role in determining the magnitude and position of the peaks in the optical spectrum. Application of pressure decreases the optical conductivity at 0.4 Ryd but the crucial peak at around 0.04 Ryd is displaced to 0.08 Ryd with reduced magnitude. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368259
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical transport in paratoluene sulfonate doped polypyrrole films at low temperature (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4230-4235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport data for paratoluene sulfonate dope polypyrrole films in the insulating regime and near the metal-insulator (M-I) boundary are presented and analyzed. Samples in the insulating region show a crossover from Mott to Efros–Shklovskii variable range hopping conduction at T=5 K and magnetoconductance of these samples is also explained by variable range hopping theory. The power law dependence of conductivity σ(T)∝Tβ is observed for the sample close to metallic side of the M-I transition with β=0.83 for 20 K〈T〈300 K and β=1/2 for 1.8 K≤T≤20 K. The magnetoconductance of this sample is analyzed by three dimensional electron-electron interaction and weak electron localization theory. The inelastic scattering length Lin obeys a power law temperature dependence, Lin∝T−p/2 with p=1. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367179
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  • 9
    Electronic Resource
    Electronic Resource
    Transport properties of HCl doped polyaniline and polyaniline–methyl cellulose dispersion (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 806-811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical resistance and magnetoresistance of the HCl doped polyaniline (PANI) in aqueous ethanol medium and polyaniline–methyl cellulose dispersion (PANI–MC) has been investigated at low temperature down to 1.8 K and in magnetic field up to 8 T. The weaker temperature dependence of resistivity characterized by the resistivity ratio ρr=ρ(1.8 K)/ρ(300 K) indicates that a better homogeneity and less disorder can be obtained by protonation with HCl in ethanol media. The temperature dependence of resistivity for both PANI and PANI–MC has been analyzed by three-dimensional variable range hopping (VRH) type of conduction. The samples with the resistivity ratio lying in the range of 102≤ρr≤103 exhibit a crossover from Mott to Efros–Shklovskii VRH conduction below 10 K. A large positive magnetoresistance at low temperature has been obtained. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368141
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  • 10
    Electronic Resource
    Electronic Resource
    Low-power deposition of fluorinated microcrystalline silicon hydrogen alloy films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10−3 Ω−1 cm−1), high photoconductivity (∼10−4 Ω−1 cm−1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm−2) and hydrogen dilution (∼20%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343432
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