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  • 1
    Electronic Resource
    Electronic Resource
    Morphological study of aluminum tris(8-hydroxyquinoline) thin films using infrared and Raman spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1902-1905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present comprehensive Raman spectra for thin films of Alq3, annealed at various temperatures up to 300 °C, over the range of 70–1800 cm−1. These spectra give strong evidence for structural rearrangement of thin films of Alq3 upon annealing at temperatures above 200 °C. Needle like crystals are observed to grow in the films and confirmed to be comprised of the α-Alq3 polymorph using the low energy Raman spectra. Furthermore, no evidence of the fac isomer or thermal interconversion between the mer and fac isomers of Alq3 was observed in either the infrared or Raman spectra of the thin films or powder. These results may have implications for the long-term efficiencies of organic light emitting diodes incorporating thin films of Alq3. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495527
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  • 2
    Electronic Resource
    Electronic Resource
    Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 781-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of aluminum tris(8-hydroxyquinoline) (AlQ) has been studied as a function of temperature and excitation wavelength. It was found that as the temperature and excitation energy is reduced the peak of the photoluminescence moves to longer wavelengths and broadens significantly. The photoluminescence spectra obtained at all temperatures and excitation energies can be deconvolved into three distinct peaks originating from three levels within the molecule. A rate-equation approach has been used to model the observed behavior and to obtain the relative lifetimes of the three processes responsible for the photoluminescence. From this we infer that at low temperatures and excitation energies the radiative recombination of triplet excitons is responsible for a significant amount of the photoluminescence of AlQ. It is this process which is responsible for the low energy tail seen in the photoluminescence of AlQ but which is not present in the electroluminescence. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373802
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  • 3
    Electronic Resource
    Electronic Resource
    1.54 μm electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1380-1382 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic light-emitting diodes have been fabricated using erbium tris(8-hydroxyquinoline) as the emitting layer and N, N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine as the hole-transporting layer. Room-temperature electroluminescence was observed at 1.54 μm due to intra-atomic transitions between the 4I13/2 and 4I15/2 levels in the Er3+ ion. These results suggest a possible route to producing a silicon-compatible 1.54 μm source technology. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124700
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  • 4
    Electronic Resource
    Electronic Resource
    Erbium (III) tris(8-hydroxyquinoline) (ErQ): A potential material for silicon compatible 1.5 μm emitters (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 798-799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Samples of erbium (III) tris(8-hydroxyquinoline) (ErQ) have been prepared and their photoluminescence measured. Clearly resolved peaks due to intra-atomic transitions between the 4I13/2 and 4I15/2 levels can be observed at room temperature. The possibility of depositing ErQ on to silicon to produce organic electroluminescent diodes offers the possibility of a cheap 1.5 μm emitter based on silicon technology. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123371
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2271-2273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p++ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′-diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316064
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  • 6
    Electronic Resource
    Electronic Resource
    Chalcogenide Glass Thin Films and Planar Waveguides (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Over the past decade, we have carried out a comprehensive development program to produce high-purity Ga:La:S and Ge:S glasses and further process these glasses into thin films. In this paper, we discuss the general properties of these glass systems and the techniques used to obtain thin films. We demonstrate the ability to deposit high-quality films ranging in thickness from nanometers to several millimeters by several methods, including chemical vapor deposition technique, a technique not usually applied to chalcogenide glasses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2005.00349.x
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