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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3470-3478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the triangular regions, where the presence of cubic inclusions was confirmed by micro-Raman measurements. The excitation dependence and temperature behavior of these lines enable us to identify their excitonic nature. From our study we conclude that the interface region between these defects and the surrounding wurtzite GaN could be responsible for PL lines. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289794
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction between chromium and oxidized polyphenylquinoxaline surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4456-4458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, x-ray photoemission spectroscopy is performed on standard polyphenylquinoxaline surfaces treated by ultraviolet irradiation under oxygen atmosphere and by plasma. Spectra reveal the appearance of oxidized carbon species and of amine, NH+3 or NO groups, indicating that polymer bonds are broken during the treatments. Interaction of chromium with these surfaces is further reported. A solid-state reaction occurs, where the new species produced by the treatments are reduced, and chromium oxide, as well as nitrogen and carbon electron-rich species are formed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361875
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  • 3
    Electronic Resource
    Electronic Resource
    Growth, physical properties, and adhesion of copper-polyphenylquinoxaline interfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1244-1255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monochromatized x-ray photoelectron spectroscopy, contact angle measurements, and peeling tests have been used to investigate the physicochemical surface properties of polyphenylquinoxaline (PPQ) and of copper-PPQ interfaces. The surface composition and oxygen content of a polymer that was deliberately oxidized by ultraviolet exposure in air were determined, and monitored during the anneal (up to 400 °C) of this thermostable polymer. Subsequent copper deposition in the monolayer range and film growth is characterized by small cluster formation, before percolation into a conducting metallic layer. Further anneal of the Cu-PPQ interface is seen to promote diffusion of Cu into the polymer, and to catalytically degrade the interface by oxidizing the polymer. These observations are correlated with peeling test measurements on the same Cu-PPQ interfaces: UV treatment combined with an anneal process are shown to be deleterious to the mechanical properties of the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357853
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature reaction in tungsten layers deposited on Si(100) substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 226-228 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten layers have been evaporated with an electron gun under ultrahigh vacuum conditions on atomically clean Si(100) substrates. The metallic films deposited on substrates at room temperature are mostly in the body-centered-cubic α phase of tungsten. Upon annealing at 400 °C, the bulk of the layer stays unreacted but we have observed the appearance of cracks in the metallic film and the segregation of silicon atoms at the surface. These atoms are not in the form of crystalline WSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102382
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of metastable AuxSi1−x alloys (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 953-955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we report the observation of surface segregation of gold from AuxSi1−x alloys with 0.25〈x〈0.5. In view of the observed Au segregation and the known ability of gold-rich alloys to oxidize readily at low temperature, we propose a mechanism for oxidation of silicon in AuxSi1−x alloys with 0.4〈x〈0.7.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100079
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  • 6
    Electronic Resource
    Electronic Resource
    Low-temperature amorphous-to-crystalline transformation of CoSi2 films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous-to-crystalline transformation of e-gun co-deposited CoSi2 films occurs from 150 to 200 °C, as observed by in situ resistivity measurement and transmission electron microscopy. Resistivity changes abruptly from 1500 to 110 μΩ cm as the amorphous film transforms into circular crystallites that are circular before impingement occurs. A room-temperature resistivity of 30 μΩ cm was obtained by annealing the film to 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99683
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  • 7
    Electronic Resource
    Electronic Resource
    Physical and chemical properties of the chromium/polyphenylquinoxaline interface (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7640-7648 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The very first stages of the chromium/polyphenylquinoxaline interface formation are investigated. X-ray photoelectron spectroscopy data evidence that new carbon and nitrogen electron-rich species are formed, necessarily implying cycle opening and bond breaking, associated with polymer disruption. Complementary experiments performed on chromium nitride and on chromium deposited on amorphous carbon films show that mostly chromium carbides and nitrides are formed during chromium interaction with the polymer. The outermost topography is studied by ex situ near-field microscopies. Chromium, with its high reactivity towards the polymer, essentially grows in a layer-by-layer mode. However, for chromium coverages higher than 60 Å, a dense network of cracks spontaneously forms, indicating a mixed-mode failure (cohesive in the chromium film and adhesive at the interface). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367882
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  • 8
    Electronic Resource
    Electronic Resource
    Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4735-4740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408268
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  • 9
    Electronic Resource
    Electronic Resource
    Resistivity of the solid solutions (Co-Ni)Si2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 177-180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid solutions of CoSi2 and NiSi2 were prepared from the solid-state reaction of thin films of Ni-Co alloys with their silicon substrates. The room-temperature resistivity of these silicide solid solutions does not increase parabolically, but (within the sensitivity of the measurements) varies linearly with composition. A model is proposed which explains the very weak alloy scattering on the basis that in these disilicides (a) the d bands are pushed below the Fermi level, (b) conduction occurs mostly via s electrons, and (c) there is no s-d scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336858
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  • 10
    Electronic Resource
    Electronic Resource
    Stability of oxides grown on tantalum silicide surfaces (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3323-3326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of TaSi2 and Ta2Si surfaces prepared under ultrahigh vacuum conditions has been studied by x-ray photoemission spectroscopy. For both silicides, Si and Ta oxides comprise the native oxide formed at room temperature. Annealing at 550 °C induces a solid state reaction within the native oxide. Ta2O5 is partially decomposed, and the liberated oxygen bonds to Si. This reaction and the influence of the silicide stoichiometry are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337699
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