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  • 1
    Electronic Resource
    Electronic Resource
    Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6191-6198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time evolution of B diffusion and electrical activation after ion implantation and annealing at 800 and 900 °C is studied using secondary-ion mass spectrometry and spreading-resistance profiling. The time evolution at 800 °C is observed in both crystalline and post-amorphized samples. Amorphized samples show near-normal concentration enhanced diffusion. Crystalline samples show anomalous transient diffusion, with a rapidly diffusing low-concentration region and a static peak region above a critical concentration Cenh=3.5×1018 cm−3. The peak region above Cenh is shown to be electrically inactive. The static, inactive B is released over a period of many hours, compared with the transient diffusion enhancement which relaxes to near-normal within 30 min. The time evolution of B diffusion at 900 °C is observed as a function of implantation dose. A critical concentration for transient diffusion, Cenh=8×1018 cm−2, independent of dose, is observed at this temperature. The transient diffusion enhancement in the diffusing part of the B profile increases with dose, up to a dose of ∼5×1014 cm−3, and saturates at higher doses. A comparison with published data shows that Cenh∼ni within a factor 2 over the temperature range 550–900 °C. We interpret our observations in terms of a nonequilibrium point-defect model of diffusion and intermediate defect formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346910
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  • 2
    Electronic Resource
    Electronic Resource
    Shallow boron junctions and preamorphization for deep submicron silicon technology (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4048-4053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, shallow p+-n junction diodes were formed by implanting BF+2 ions into single-crystal silicon or silicon preamorphized by either Si or Ge implantation. BF+2 implantation at energies of 20 or 25 keV and a dose of 1×1015 cm−2 was followed by furnace annealing at 600 °C in nitrogen ambient. Most samples received a further nitrogen-ambient anneal at 850 °C, with various periods of time. Secondary ion mass spectroscopy was used to measure the B profiles. Cross-sectional transmission electron microscopy was used to study the amorphous layers and the defects remaining after annealing. Electrical characterization of the diodes is described. In preamorphized samples, the residual defect density decreases, and the defect band located at the original amorphous-crystalline interface becomes sharper, as the mass of the amorphizing ion species is increased. Ideal low-leakage shallow junctions can be made following either Si or Ge preamorphization and furnace annealing, without removing all the defects induced by preamorphization. This is achieved by containing the implanted B profile completely within the amorphous layer, and by containing the defect band completely within the final biased junction. However, even without a preamorphization step, ideal low-leakage shallow junctions were obtained after BF+2 implantation and 600 °C furnace annealing. This suggests that preamorphization may not ultimately be needed for practical engineering of shallow junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352873
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  • 3
    Electronic Resource
    Electronic Resource
    Dislocation formation and B transient diffusion in C coimplanted Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2314-2325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Suppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si1.15C complexes. These complexes also deteriorate the electrical properties of the implanted layer. They dissolve at annealing temperatures higher than 900 °C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361157
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  • 4
    Electronic Resource
    Electronic Resource
    Ion pairing effects on substitutional impurity diffusion in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 703-705 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experiments have shown that ion pairing has a major influence on the diffusion and precipitation of oppositely charged impurities in silicon. Published data are used to obtain ion pairing coefficients Ω for n-type impurities with B and In. A single value, Ω=0.17/ni, suffices to describe the cases P-B, As-B, and Sb-B. For P-In and Sb-In, Ω is roughly an order of magnitude smaller. These observations are consistent with the picture that paired ions occupy adjacent substitutional sites, with a small perturbation in their Coulomb binding arising from elastic effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100868
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  • 5
    Electronic Resource
    Electronic Resource
    Analytical description for the diffusion and recombination of point defects in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1415-1417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified analysis is given of point-defect diffusion in the presence of traps which saturate on recombination. Examples of this phenomenon are self-interstitial diffusion and gettering in Czochralski silicon, and coupled interstitial-vacancy diffusion in perfect crystalline silicon. When recombination is diffusion limited, a simple diffusion equation is obtained, with an effective diffusivity D˜ which is an analytical function of the point-defect and trap concentrations. The physical meaning of this function is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100684
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  • 6
    Electronic Resource
    Electronic Resource
    General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4484-4490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A general expression for the intrinsic diffusivity of a substitutional impurity in silicon is derived in terms of the self-interstitial and vacancy concentrations. The vacancy mechanism, the exchange mechanism, and two processes associated with the motion of interstitial impurity atoms, the "kick-out'' and "Frank–Turnbull'' mechanisms, are included in the analysis. These last two contributions to the impurity diffusion are not additive under nonequilibrium point-defect conditions, and may partially cancel each other in certain cases. The general expression can be fitted to data on As diffusion in silicon under nitridation and oxidation conditions, which were previously unexplained. The results indicate the possible presence of substantial vacancy, pushout, and Frank–Turnbull terms, but no significant exchange term. Conditions are proposed for definitive experimental measurements to test the significance of the Frank–Turnbull contribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341273
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanisms of implant damage annealing and transient enhanced diffusion in Si (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2981-2983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112483
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  • 8
    Electronic Resource
    Electronic Resource
    Interstitial traps and diffusion in epitaxial silicon films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2646-2648 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation-enhanced diffusion in molecular beam epitaxially grown epitaxial silicon films decreases rapidly with depth due to trapping of injected interstitials at microscopic defects. Apparently inconsistent data on trapping kinetics, recently reported in the literature, are resolved by analyzing the time evolution of the interstitial distribution CI(x,t). The analysis enables characterization of trap size and trap concentration in the parts-per-billion range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111479
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  • 9
    Electronic Resource
    Electronic Resource
    New technique for measuring two-dimensional oxidation-enhanced diffusion in silicon at low temperatures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2130-2132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a new high-resolution technique is presented for determining the lateral extent of oxidation-enhanced diffusion (OED). A periodic grid of lines and spacings is used as an oxidation mask. It will be shown that a simple secondary ion mass spectroscopy measurement permits the extraction of parameters in the lateral direction with a resolution which can be as good as 10 nm. The lateral extent of OED is depth dependent, consistent with a physical model of point-defect recombination at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111706
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1211-1213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The injection of interstitials during annealing of nonamorphizing Si implants has been monitored by means of sharp boron-doped marker layers grown by reduced pressure chemical vapor deposition. The boron diffusivity enhancement measured during the initial annealing stages (t〈15 s) at 700 °C is at least an order of magnitude larger than the enhancement during subsequent annealing. The high supersaturation of interstitials during the early stages of the anneal induces immobilization of boron down to concentrations of ≈1×1017 cm−3, consistent with interstitial-driven boron clustering. The ultrafast diffusion sets lower limits for the silicon and boron interstitial diffusivities at 700 °C of 2×10−10 cm2 s−1 and 2×10−13 cm2 s−1, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117414
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