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  • 1
    Electronic Resource
    Electronic Resource
    Observation of excitonic transitions in InSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of interband exciton transitions in InSb/AlxIn1−xSb multi-quantum-well samples. The exciton peaks are identified with the use of a simple quantum well model. The strain present in the InSb wells alters the spectrum significantly from that for unstrained III–V materials and makes it possible to use the exciton spectrum in determining the band offset. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122097
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  • 2
    Electronic Resource
    Electronic Resource
    A magneto-photoluminescence investigation of the band offset between InAs and arsenic-rich InAs1−xSbx alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2501-2503 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/InAs0.865Sb0.135 quantum wells are characterized using magneto-photoluminescence. Band- to-band transitions are found at energies lower than the band gaps of either the InAs or the InAs0.865Sb0.135 with photoluminescence emission at wavelengths up to 4.8 μm. By modeling the quantum size shifts of the photoluminescence transitions and their energy shift in a magnetic field, the valence band offset between InAs and In(As,Sb) is deduced to be type II with electron confinement in the In(As,Sb) alloy and hole confinement in InAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117720
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  • 3
    Electronic Resource
    Electronic Resource
    Yellow luminescence and persistent photoconductivity of undoped n-type GaN (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5454-5459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level defect-related optical properties of undoped n-type GaN grown by metalorganic chemical vapor deposition are investigated using photoluminescence (PL), optical absorption (OA), photoconductivity (PC), and persistent photoconductivity (PPC) measurements. From the temperature dependence of the PL and OA, we find that the yellow luminescence (YL) is due to shallow-to-deep donor recombination. PL, PC, and PPC results manifest a strong correlation in properties related to deep levels. Samples which emit YL exhibit a PC peak at 1.9 eV due to the photoionization of deep levels as well as to the persistent photoconductivity effect, whereas samples with no YL have no PC peak in the forbidden gap and no PPC at any photon energy, suggesting a common origin. Furthermore, two types of PPC behavior were observed depending on the sample quality: typical stretched exponential decay in relatively thick samples and photocurrent quenching and a subsequent reduction of the dark current in thin samples. An explanation of the latter phenomenon based on photoinduced metastable electron traps in a highly defective layer near the interface is suggested from the temporal behavior of the PC. These traps seem to disappear slowly after the illuminating light is turned off. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342024
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3132-3134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use transmission spectroscopy to determine the energy gap for the AlxIn1−xSb alloy system in the Al concentration range from 0% to 25% from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al concentration range, we find a linear change of energy gap with alloy lattice constant. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122696
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  • 5
    Electronic Resource
    Electronic Resource
    Mobility anisotropy in InSb/AlxIn1−xSb single quantum wells (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463206
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  • 6
    Electronic Resource
    Electronic Resource
    Band offset determination in the strained-layer InSb/AlxIn1−xSb system (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3905-3907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1−xSb interface. The method we use is based on similar studies in the GaAs/AlxGa1−xAs system but modified to reflect the strong nonparabolicity and strain of the InSb/AlxIn1−xSb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%–12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/AlxIn1−xSb system for practical Al concentrations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126816
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  • 7
    Electronic Resource
    Electronic Resource
    Optical absorption and anomalous photoconductivity in undoped n-type GaN (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1021-1023 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity and optical absorption measurements were employed to analyze deep levels in undoped n-type GaN films grown on sapphire substrate by metalorganic chemical vapor deposition. At room temperature, the photoconductivity measurement exhibits a broad level at around 1.90 eV. Similarly, the optical absorption spectrum shows a deep level located at 1.87 eV within the band gap, which is best described by a transition from a donor charge-transfer level to the conduction band, according to Lucovsky theory. A persistent photoconductivity whose behavior is distinctive from that of previously reported work for n- or p-type GaN epitaxial films was observed. The photocurrent quenching and decreased dark current in the persistent photoconductivity effect suggest that metastable electron states are formed in the band gap to trap electrons which tunnel out the potential barrier with long recovery time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125944
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  • 8
    Electronic Resource
    Electronic Resource
    Temporal Release of Flavor Compounds from Low-fat and High-fat Ice Cream During Eating (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Fat controls the intensity and the release rate of volatile compounds because of its solvent property. Our objective was to understand the effect of fat on the flavor release behavior exhibited while ice cream is eaten. The temporal flavor profiles of ice creams, which contained various fat levels and were spiked with known amounts of selected volatiles, were determined by a temporal modified purge and trap and time-intensity analyses. Stale and cherry flavors were released faster and at higher intensities as fat content decreased. Fat had the opposite effect on vanilla flavor release. Temporal modified purge and trap analysis was an effective method to observe the release of some flavor compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2003.tb07035.x
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  • 9
    Electronic Resource
    Electronic Resource
    Developing a Descriptive Analysis Procedure for Evaluating the Sensory Characteristics of Soy Sauce (2004)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 69 (2004), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : The intense and complex flavor characteristics of soy sauce makes it very difficult to obtain a comprehensive sensory profiling, and an effective descriptive analysis protocol for soy sauce products has not yet been established. The aims of this study were (1) to establish an objective, effective, and powerful descriptive analysis procedure that can be used to understand the sensory characteristics of soy sauce products and (2) to evaluate the sensory characteristics of 6 fermented type soy sauces with high market share in Korea. The test procedures, reference standards, and definitions for the descriptive terms of soy sauces were developed by 8 trained panelists. Panelists developed 11 aroma attributes, 10 flavor attributes, and 1 mouth feel attribute for evaluating the sensory characteristics of soy sauces. The data set were statistically analyzed by analysis of variance and principal component analysis. There were significant differences among the soy sauce samples in the intensity of all the sensory attributes. The 1st and 2nd principal component (PC) explained 53.6% and 23.5% of the total variation, respectively. The basic taste attributes and fermented/chemical attributes were the dominant attributes defining PC1 and PC2 axes, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1750-3841.2004.tb18024.x
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of a sodium-dependent taurine transporter in rabbit choroid plexus
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Biomembranes 1193 (1994), S. 10-16 
    Details
    ISSN: 0005-2736
    Keywords: Central nervous system ; Sodium dependence ; Taurine ; Taurine transport
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2736(94)90326-3
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