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  • 1
    Electronic Resource
    Electronic Resource
    Visible wavelength (6470 A(ring)) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7124-7129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 A(ring). Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363725
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  • 2
    Electronic Resource
    Electronic Resource
    Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1233-1235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362860
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of temperature-insensitive emission wavelength in GaInAs strained multiple-quantum-wire heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2386-2388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the photoluminescence (PL) properties of GaxIn1−xAs strained multiple-quantum-wire (MQWR) heterostructures formed in situ by the strain-induced lateral-layer ordering (SILO) process. Samples with moderately strained MQWR active regions demonstrate a negligible variance in emitted PL spectra with respect to temperature. The net temperature dependence of PL wavelength for these samples is less than 0.1 A(ring)/°C between 77 and 300 K. For MQWR samples with stronger lateral composition modulation, the PL peak wavelength blue shifts with increasing temperature. The SILO process induced multiaxial strain in the (GaAs)2/(InAs)2.2 short-period-superlattice active region is responsible for this temperature insensitivity and blueshift of PL wavelength with temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116142
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of substrate misorientation on the growth of GaxIn1−xP lateral quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2694-2696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effects of misoriented GaAs substrates and varied substrate temperatures on the formation of GaxIn1−xP lateral quantum wells (LQWs) by the strain-induced lateral-layer ordering (SILO) process. Nominally [001] GaAs on-axis substrates, [001] substrates cut 2° off toward the [110] direction, and [001] substrates cut 2° off toward the [1¯10] direction were used to simultaneously grow LQWs. The samples were characterized using plan-view and cross-sectional transmission electron microscopy and polarized photoluminescence spectroscopy. We found that regardless of the substrate misorientation or substrate growth temperature, the SILO process induced LQWs always formed along the [1¯10] direction; primarily determined by the direction of the group-V dimer bonds on the surface during growth. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113491
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  • 5
    Electronic Resource
    Electronic Resource
    AlGaInP multiple-quantum-wire lasers grown by gas source molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 458-460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaxIn1−xP/Al0.15Ga0.35In0.5P graded-index separate-confinement heterostructure visible laser structures with multiple quantum wire active regions have been formed in situ during gas source molecular beam epitaxy. No regrowths or ex situ fabrication procedures were employed in the formation of the quantum wires. Quantum wires with cross-sectional dimensions of approximately 50×120 A(ring) were routinely achieved with a linear density of 100/μm. Broad area stripe geometry lasers with contact stripe oriented in the [110] and [1¯10] directions exhibited anisotropic threshold current densities varying in ratio by a factor of more than 3.75. Threshold current densities as low as 400 A/cm2 were obtained for lasers with stripes in the [110] direction, perpendicular to the quantum wires. Strong dependence of electroluminescence polarization on stripe direction was also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108932
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  • 6
    Electronic Resource
    Electronic Resource
    Strained GaxIn1−xP multiple quantum wire light-emitting diodes: A luminescence polarization study (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 729-731 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strongly polarized photoluminescence and electroluminescence spectra have been obtained from strained GaxIn1−xP quantum wire heterostructures grown on (100) oriented, on-axis GaAs substrates by an in situ epitaxial technique. The phenomenon of strain-induced lateral layer ordering has been exploited in order to create lateral superlattices of GaxIn1−xP compositionally modulated in the [110] direction with a modulation period of 96 A(ring). The previous and subsequent growth of lattice-matched Ga0.51In0.49P ternary alloy epilayers results in the formation of compressively strained quantum wires. Transmission electron microscopy shows the wire cross sections to be ∼48×200 A(ring). These structures exhibit 77 K photoluminescence spectra at 1.79 eV that are strongly (96%) polarized parallel to the wires due to strain resulting from the lateral compositional modulation. The intensity of this emission depends critically on the polarization of the incident excitation. Electroluminescence spectra from multiple quantum wire light-emitting diodes display anisotropic polarization as well. The energies and optical anisotropies of these luminescence bands are consistent with a simple theoretical analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108852
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  • 7
    Electronic Resource
    Electronic Resource
    GaxIn1−xP multiple-quantum-wire heterostructures prepared by the strain induced lateral layer ordering process (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1359-1361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the in situ growth of GaxIn1−xP multiple-quantum-wire (MQWR) structures by gas source molecular beam epitaxy. The MQWRs were formed through a strain induced lateral layer ordering (SILO) process occurring spontaneously when (GaP)n/(InP)n short-period superlattices were grown on (100)-oriented on-axis GaAs substrates. In one sample, cross-sectional transmission electron microscopy estimated average quantum-wire cross sections of 50 A(ring)×100 A(ring) with lengths of over 3000 A(ring) leading to a linear density of 100 wires/μm. The existence of the MQWRs is also supported by polarized photoluminescence spectroscopy. Anisotropy ratios for two orthogonal polarizations were measured to be an order of magnitude larger than any previously reported. These data support the existence of MQWRs and demonstrate that the SILO growth process is a consistent and reproducible method of MQWR fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108678
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  • 8
    Electronic Resource
    Electronic Resource
    Exciton dynamics in a novel high-yield GaInP quantum-wire array (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the carrier dynamics in a spontaneously organized array of quantum wires grown by a novel technique that involves strain induced lateral ordering (SILO). Our cw–photoluminescence (PL) measurements reveal a very strong optical anisotropy associated with these wires, while the time-resolved PL measurements demonstrate a very interesting carrier dynamics due to localization of excitons and slow interwire scattering. The high quality and freedom from defects of the SILO multiple quantum wire array are nicely borne out by the long decay photoluminescence times (∼4 ns). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117147
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  • 9
    Electronic Resource
    Electronic Resource
    p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of in situ As doped Hg1−xCdxTe by molecular beam epitaxy and activation of As at 250 °C is reported. We have used elemental arsenic, As4, as the p-type dopant source. The activation of As was observed in the 1016–1018 cm−3 range after a low temperature annealing step at 250 °C. However, for doping levels above 5×1018 cm−3, we have observed that the As activation efficiency drops. It is speculated at this time that self-compensation and formation of neutral As complexes may limit doping efficiency at very high levels. We also report our data on the structural and electrical characteristics of these As doped p-type layers using secondary ion mass spectroscopy analysis, and Hall effect measurements. An acceptor activation energy of 5.4 meV was obtained based on the dependence of the Hall coefficient on temperature. This value was attributed to singly ionized As located on a Te site (AsTe•) acting as an acceptor. A brief discussion on activation mechanism of As doped p-type HgCdTe material is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120144
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  • 10
    Electronic Resource
    Electronic Resource
    EFFECTIVENESS OF PNEUMATIC CONVEYING SYSTEMS FOR COOLING SPRAY-DRIED FOOD PRODUCTS (1971)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 36 (1971), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: — The cooling effectiveness during pneumatic transport of a spray-dried food product has been investigated. Differential equations which describe the product and air temperatures as a function of distance from the initial mixing point have been derived and solved. The predicted results have been compared to experimental data obtained in a conveying tube equipped with thermocouples. The results indicated the equilibrium temperature of the air-product mixture could be predicted and was a function of loading ratio. Increased loading ratio decreased the distance required to reach the equilibrium temperature. The effectiveness of product cooling after reaching the equilibrium temperature was a function of conditions at the conveying tube wall. Results indicated that a water spray over the exterior surface was more effective than forced-air circulation which, in turn, was more effective than natural air circulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1971.tb04049.x
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