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  • 1
    Electronic Resource
    Electronic Resource
    A study of metal-oxide-semiconductor capacitors fabricated on SF6 and SF6+Cl2 reactive-ion-etched Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2710-2716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor capacitors have been fabricated on SF6 and SF6+Cl2 reactive-ion-etched silicon in order to study the resulting defects at the Si-SiO2 interface and in the bulk of the silicon substrate. The reactive-ion-etching (RIE) induced damage reveals itself by the presence of positive charge in the oxide, by interfacial states, and by two deep levels in the silicon bulk located at 300 and 335 meV above the valence band and probably related to fluorine atoms. We have studied the effect of the chamber pressure and the plasma composition on the resulting damage. This damage is more important when the chamber pressure is low because of the higher free-mean path of the plasma ions. On the other hand, when the Cl2 concentration in the plasma is raised the densities of interface states and of the deep levels decrease while the positive charge in the oxide increases. Finally, we have shown that a post-RIE thermal annealing can be used to restore the electrical properties of the RIE-damaged silicon surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351043
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4855-4860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characterization of He-ion implantation-induced deep levels existing in fully implanted p+n InP junctions isolated by He bombardment is reported in this work. An electron trap located at 0.19 eV below the conduction band and a hole trap located at 0.13 eV above the valence band were detected by deep-level transient spectroscopy (DLTS). Several emission characteristics of these traps were extracted from the correlation between DLTS and the capacitance–voltage transient technique. The experimental determination of trap capture properties was also carried out. In particular, the capture kinetics was found to exhibit a strong temperature dependence for both centers. Two experimental methods—direct recording of capture transients and analysis of DLTS peaks—were used to estimate the capture parameters. Finally, some tentative arguments are proposed in order to correlate the results obtained from the thermal emission and capture measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371452
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6924-6930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of metal–insulator–semiconductor (MIS) structures on InP. The interfacial state density and deep levels existing in MIS structures were measured by deep level transient spectroscopy (DLTS) technique. The electrical insulator properties were measured by current–voltage techniques. MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (SiNx:H) thin films by electron cyclotron resonance chemical vapor deposition. In this work, we show that interfacial state density can be diminished, without degrading electrical insulator properties, by fabricating MIS structures based on a dual layer insulator with different compositions and with different thickness. The effect of rapid thermal annealing treatment has been analyzed in detail in these samples. Interface state densities as low as 3×1011 cm−2 eV−1 were measured by DLTS in some structures. Conductance transients caused by disorder-induced gap states have been observed and analyzed providing some information about interface width. Finally, deep levels induced in the substrate have been investigated. Three deep levels at energies of 0.19, 0.24, and 0.45 eV measured from the conduction band have been found, and their dependence on the rapid thermal annealing process has been analyzed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371774
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  • 4
    Electronic Resource
    Electronic Resource
    Dopant level freeze-out and nonideal effects in 6H–SiC epilayer junctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 310-315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results obtained from current–voltage (I–V) and capacitance–voltage techniques along with admittance spectroscopy have been qualitatively correlated to achieve a more comprehensive picture of dopant freeze-out and conduction mechanisms in a 6H–SiC n+p-type junction. Special attention was paid to the temperature range of 100–200 K. The dependence of the ideality factor, n, on the temperature was obtained experimentally from the I–V measurements. Two contributions have been considered in its evolution. At room temperature, n is very close to 2, indicating that recombination processes dominate the forward conduction mechanism. This result may be related to the SiC sample preparation process: structural defects may be present at the junction interface giving rise to interface states which act as recombination centers. At low temperatures (100–200 K), the Poole–Frenkel effect on the impurity level is the main effect responsible for the nonideal behavior of the junction. We have carried out a quantitative estimation of the n factor predicted by this effect incorporating partial ionization of the dopant. These calculations agree very well with the experimental values. At these temperatures the thermal excitation is low, the traps remain inactive, and their contribution to the conduction mechanisms is negligible. When the temperature increases, traps become thermally activated and then the recombination processes participate in the conduction mechanisms and they become dominant at room temperature. The admittance analysis allows numerical values of the aluminum emission rate to be obtained at different temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360831
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  • 5
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5325-5330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forward bias is recombination in the space-charge zone, whereas a thermally activated tunneling mechanism involving a trap at 0.32 eV dominates at reverse bias. Five deep levels located in the upper-half of the band gap were detected in the junctions by DLTS measurements, three of which (at 0.6, 0.45, and 0.425 eV) were found to appear due to rapid thermal annealing. The origin of the other two levels, at 0.31 and 0.285 eV, can be ascribed to implantation damage. Admittance spectroscopy measurements showed the presence of three levels at 0.44, 0.415, and 0.30 eV, all in agreement with those found by DLTS. The DLTS measurements showed that the concentration of deep levels decreased after longer annealing times, and that the concentration of deep levels due to the implantation increased after additional P or Si implantations. This explains the influence of annealing time and additional implantations on the I-V characteristics of the junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359710
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  • 6
    Electronic Resource
    Electronic Resource
    Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3143-3150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p+-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy (DLTS) and capacitance–voltage transient technique (CVTT). Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which (at 0.6, 0.45, 0.425, and 0.2 eV below the conduction band) result from RTA, while the origin of the other three levels (at 0.46, 0.25, and 0.27 eV below the conduction band) can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364348
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  • 7
    Electronic Resource
    Electronic Resource
    Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4338-4345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: DX centers in selenium doped AlxGa1−xAs with two values of the aluminum content, x=0.34 and 0.48, are carefully analyzed by three different techniques: deep level transient spectroscopy (DLTS), admittance spectroscopy, and the capacitance voltage transient technique (CVTT). We use conceptual differences between these techniques to extract important information about the nature of the DX centers. Good agreement is found between the capacitance transients recorded during the DLTS measurements and those obtained by CVTT at every point in the space charge region. From that, we conclude that is the very nature of the DX centers the solely responsible for the anomalies found in DLTS results. The main cause for these anomalies is the thermal dependence of the electron capture rate of these centers. CVTT curves also reveal that no electric field enhanced emission processes take place for these centers. For our analysis of the shape of the DLTS and admittance spectroscopy curves we conclude that several DX levels exist, according to the alloy broadening theory. Finally, some simulations of the DLTS spectra were made. These calculations reveal the important effect of experimental parameters such as the filling pulse duration, the velocity of the temperature scan, and the initial conditions of the occupation factor of the deep levels on the DLTS curves. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366242
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  • 8
    Electronic Resource
    Electronic Resource
    Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 826-828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119658
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7978-7980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characterization of a He ion implantation-induced deep level existing in fully implanted p+n InP junctions isolated by He bombardment has been carried out in this work. A discrete deep level located at 0.19 eV below the conduction band was detected by deep level transient spectroscopy (DLTS). Several emission characteristics of this trap were derived by the correlation between DLTS and capacitance–voltage transient technique. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369388
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the EL2 center in GaAs by optical admittance spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6309-6314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the electron optical capture cross section, σ0n(hν), of EL2 (the most important native center in GaAs) using a new technique which we have recently developed: optical admittance spectroscopy. This is a spectroscopic technique based on the measurement of the capacitance and conductance of a junction under monochromatic light of energy hν. This technique allows the measurement of the spectrum σ0n(hν) of each center located in the band gap. We have measured the electron photoionization cross section of the EL2 center, σ0n(hν), at three different temperatures within a range limited at high temperature by thermal emission and at low temperature by photoquenching (a feature characteristic of EL2 below 140 K). The study of the experimental data reveals that this center has a more complex nature than that of a simple defect. It seems to behave like a family of very close levels corresponding to similar atomic structures and located near the midgap. These results also reveal the existence of a shallow level close to the valence band and associated with EL2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345149
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