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  • 1
    Electronic Resource
    Electronic Resource
    Growth and properties of YBa2Cu3O7 thin films on vicinal and polycrystalline MgO substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2951-2953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the results of a study on the growth by laser ablation of YBa2Cu3O7 thin films on polycrystalline and annealed vicinal (001) MgO substrates. In both instances the films were found to grow predominantly with the c axis normal to the plane of the substrate, regardless of the orientation of the MgO surface. In the case of the vicinal substrates the films were found to have superconducting properties comparable to those obtained with films grown on (001) oriented, annealed single-crystal substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104208
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal stability of PtSi contact to GexSi1−x (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 905-907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of PtSi contact to epitaxial Ge0.5Si0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650 °C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104472
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  • 3
    Electronic Resource
    Electronic Resource
    Mixing inhibition and crystalline defects in heavily Si-doped AlAs/GaAs superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2650-2652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattice mixing in heavily silicon-doped AlAs/GaAs superlattices has been examined by secondary-ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). Samples were grown by molecular beam epitaxy with Si concentrations of 1018 to 1020 cm−3 introduced during the growth process. Interdiffusion of Al was inhibited at a Si concentration of 1020 cm−3. Defect clusters and prismatic dislocation loops were found to be associated with Si concentrations of 1020 and 1019 cm−3, respectively. Si was observed by SIMS to segregate preferentially into the GaAs layers and TEM observation revealed defect formation in these same layers during the diffusion process, suggesting a strong correlation between Si segregation and defect formation. In the range of Si concentrations employed, the Al diffusion coefficient is found to vary as the third power of the estimated electron concentration, consistent with our previous results at lower concentrations. These results suggest that the diffusion inhibition at high Si concentrations may arise from the trapping of mobile Si species by defects with a consequent reduction of the carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100183
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  • 4
    Electronic Resource
    Electronic Resource
    Observation of multiple precipitate layers in MeV Au++-implanted silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1796-1798 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103103
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  • 5
    Electronic Resource
    Electronic Resource
    The structure of Ni5Si2 formed in Ni-Si thin-film lateral diffusion couples (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1189-1194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of the nickel silicide, Ni5Si2, which forms during solid-state reactions using self-supporting Ni-Si lateral-diffusion couples, has been studied using high-resolution electron microscopy (HREM) and selected-area electron diffraction. Two different structures for Ni5Si2 have been identified, one of which is consistent with the crystal structure which has been reported to have an actual composition of Ni31Si12. There is evidence for the existence of a third structure. Variations in the distribution of these structures and the presence of planar defects may account for the reported composition range of Ni5Si2 in the Ni-Si phase diagram. The observed HREM images are compared with computer simulated images.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339830
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  • 6
    Electronic Resource
    Electronic Resource
    Improved GaAs/AlGaAs quantum-well heterostructures by organometallic vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 678-680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of GaAs/AlGaAs quantum-well heterostructures have been investigated using transmission electron microscopy (TEM) together with photoluminescence. Modifications to the reactor are described which allow abrupt interfaces (∼5 A(ring)) and strong optical emission to be obtained up to 300 K from single layers 〈40 A(ring) thick. TEM and Raman scattering have been used to characterize heterostructures, which has resulted in an optimized gas handling system for precise control of reactant fluxes in a low-pressure apparatus. The effects of pressure transients, gas-flow recirculation, and residual aluminum incorporation in thin GaAs films grown over AlGaAs are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336637
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  • 7
    Electronic Resource
    Electronic Resource
    Dislocation motion in GaAs/AlxGa1−xAs structures (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4065-4073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations have been made to move through different compound semiconductor epilayer structures by deformation at 320 °C and have then been examined by transmission electron microscopy. The interaction between the dislocations and the GaAs/AlxGa1−xAs interface is shown to depend on the thickness of the AlxGa1−xAs layer. Dislocations are pinned at the interface and, for the MOCVD-grown material, within the AlxGa1−xAs layer. Dislocation dipoles, some of which are faulted dipoles, are then pulled out and lie preferentially along the heterojunction. It is emphasized that these dipoles, which may be important in device degradation, form as a result of dislocation glide and not dislocation climb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335587
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  • 8
    Electronic Resource
    Electronic Resource
    Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 120-123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy and Raman spectroscopy have been used to study the defect structure and intermixing of annealed ion-implanted Al0.3Ga0.7As/GaAs superlattices. The results show clearly that the amount and depth of superlattice layer intermixing depends on the ion mass. In superlattices that retain their structure after implantation and annealing, the distribution of defect clusters (primarily interstitial loops) is inhomogeneous; most defect clusters are nucleated in the GaAs layers. Examination of unannealed superlattice samples reveals that ion beam damage occurs preferentially in the GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336852
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of iron based precipitates in GaAs layers grown by molecular-beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2400-2402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers that contain small Fe-based precipitates have been grown using molecular-beam epitaxy. The layers were produced either by codepositing Fe during GaAs growth or by first depositing a thin layer of an Fe-Ga alloy and then growing a capping layer of GaAs. Microstructural characterization of the layers was performed by using transmission electron microscopy. For those samples in which the Fe alloy layer was deposited, the layer disappeared after GaAs growth, leaving behind Fe-containing precipitates distributed throughout the GaAs overlayer. Precipitates were also formed in Fe codeposited samples. The sizes and number densities of the precipitates were dependent on the growth method used, with mean diameters ranging from 21 to 47 nm and number densities from 1013–1015 per cm3. The phase, orientation, and morphology of the particles were also dependent on the growth conditions used, with FeAs and Fe being observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113953
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  • 10
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy studies on the lateral growth of nickel silicides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 258-263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) has been utilized to study the nickel-silicide growth in self-supported lateral-diffusion, thin-film couples by overlapping deposited layers of Ni and Si between two silicon oxide deposited films. Energy-dispersive x-ray spectroscopy, microdiffraction, and selected area diffraction were used to identify the Ni-silicide phases and their crystal structures. Long-grain growth of Ni2Si, as a result of phase-boundary migration induced by diffusion, was observed during in situ annealing between 500 and 750 °C in TEM. No preferred orientation or particular crystallographic relationship was found among the long grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335482
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