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  • 1
    Electronic Resource
    Electronic Resource
    Possibility of multiple tunnelling current peaks in a coupled quantum well system (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 943-947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrödinger equation for an electron wave packet in a bilayer electron system. Considering both Hartree and exchange-correlation potentials, we have calculated the tunnelling rates between the two quantum wells when an external bias is applied in the double quantum well system. Due to the nonlinear effective-mass equation, it is found that the charge dynamically trapped in both wells produces a reaction field which modifies the system resonant condition. At different electronic sheet densities, we have shown the possibility of having multiple resonant tunnelling peaks in a bilayer electron system. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373760
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  • 2
    Electronic Resource
    Electronic Resource
    Two-dimensional tight-binding model of ac conductivity in porous silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7693-7698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A time-dependent tight-binding model has been developed to study the ac conductivity in porous silicon. Assuming that carriers are allowed to hop between isolated pairs of Si nanocrystals embedded in a SiO2 matrix, the tunneling times have been calculated according to different geometries. The geometrical structure of porous silicon has been modeled with simple percolationlike clusters. By using the tunneling times, the ac conductivity behavior in the high-frequency regime has been calculated in the pair approximation. The conductivity increases with the frequency according to a power law with an exponent lower than unity. It is found that there is a strong dependence of the ac conductivity on the thickness of the SiO2 interconnecting layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367940
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