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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2552-2554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman scattering of AlGaAsSb quaternary alloy semiconductors has been investigated for the first time. The AlGaAsSb quaternary alloys, including the AlGaSb ternary alloys, were grown by organometallic vapor phase epitaxy. The dependence of the long-wavelength longitudinal-optical phonon frequencies on the composition are reported. The first-order Raman spectra show a two-mode behavior for the AlGaSb ternary alloys and a three-mode behavior for the AlGaAsSb quaternary alloys. For AlGaAsSb, two peaks located below 300 cm−1 are assigned as the GaAs- and GaSb-like LO modes. Two peaks observed above 300 cm−1 are assigned as the "AlAs plus AlSb'' LO and TO modes. A broad peak observed below 200 cm−1 is assigned as a disorder-activated acoustic phonon mode.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1890-1892 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of ordering in GaAsP alloys is reported. The CuPt structure with ordering along the 〈111〉 directions on the anion sublattice was observed by transmission electron diffraction patterns in GaAs1−xPx alloys at compositions of x=0.3 and 0.4. Only two of the four CuPt variants were observed. The degree of ordering along the 1/2[1¯11] direction is higher than for the other variant, ordered along the 1/2[11¯1] direction. In addition, the degree of ordering decreases when x is reduced from 0.4 to 0.3.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 746-748 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon films deposited on silicon dioxide were partially amorphized by implantation with 100 keV gallium ions to a dose of 6×1015 cm−2. These films were then subjected to various heat treatments at 580 and 900 °C using conventional furnace or rapid thermal heating techniques. Sudden drops in sheet resistance occurred at lower temperatures with little change upon further heating. However, the high-temperature annealed specimen shows only an increase in sheet resistance with time. An explanation of these changes is proposed in terms of a liquid phase melting mechanism taking place during the crystallization of the amorphized near-surface layer. Transmission electron microscopy and Rutherford backscattering observations support this explanation.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2451-2456 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents results of organometallic vapor-phase-epitaxial growth of low dislocation density GaAs1−xPx on GaAs, utilizing a thin compositionally graded layer (2 μm) and a strained-layer superlattice (SLS) to reduce the dislocation density. The grown structure consists of three sections: (1) a 2-μm GaAs1−xPx graded layer with final phosphorus composition x1 on a GaAs substrate; (2) a GaAs1−yPy /GaAs1−y'Py' SLS; and (3) a 1-μm GaAs1−xPx top layer with x=0.4. Three types of grading layers were investigated: sublinear, hyperlinear, and linear. The linear grading is found to give the lowest dislocation density. However, the 2-μm-thick linearly graded region is definitely too thin to release all the misfit strain. The residual strain produces dislocations after the SLS has been grown, resulting in dislocation generation in the constant composition layer. A novel method has been developed to eliminate this problem. The phosphorus composition at the end of the grading, x1, is made intentionally larger than both the average composition of the SLS and the top layer to prevent residual strain relief during the growth of the top layer. Using this "overshoot grading'' method, the etch pit density in the top layer is reduced from 3×107/cm2 without the special structure to 6.5×105/cm2. The reduction of dislocation density by the SLS has been systematically studied with variation of the SLS parameters, including the thickness of each layer, the number of periods, and the composition change in the SLS. The results show that the SLS itself can reduce the dislocation density by about one order of magnitude. The combination of the SLS with overshoot grading yields the most effective elimination of dislocations. Using the optimum conditions, GaAs0.6P0.4 with good surface morphology, strong visible photoluminescence intensity, and a dislocation density of 6.5×105/cm2 has been obtained.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 329-331 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Friction and wear characteristics of titanium-containing amorphous hydrocarbon (Ti–C:H) coatings were measured during unlubricated sliding against WC–Co. These Ti–C:H coatings consist of nanocrystalline TiC clusters embedded in an amorphous hydrocarbon (a-C:H) matrix, i.e., they are TiC/a-C:H nanocomposites. The elastic modulus and hardness of the coatings exhibit smooth variations with increasing Ti composition. In contrast, a relatively abrupt transition occurs in the friction coefficient and wear rate of the coatings over a relatively narrow (20–30 at. %) Ti composition range. Our results reveal bimodal friction and wear behaviors for the TiC/a-C:H nanocomposites, a-C:H like at Ti compositions below 20%, and TiC like at Ti compositions above 30%. The two different wear mechanisms that operate as the volume fraction of nanocrystalline TiC clusters changes are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 739-744 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (AlxGa1−x)0.51In0.49P layers, lattice matched to (001)-oriented GaAs substrates, have been grown throughout the entire aluminum composition range from x=0 to 1.0 by atmospheric pressure organometallic vapor-phase epitaxy (OMVPE), using trimethylaluminum (TMAl), trimethylgallium (TMGa), trimethylindium (TMln), and phosphine (PH3) as source materials in a horizontal reactor. The growth temperature was held constant at 680 °C. Excellent surface morphologies were obtained over the entire composition range. Unlike previously reported results, neither high growth temperatures nor low pressures were needed in order to obtain good-quality, high-x (AlxGa1−x)0.51In0.49P alloys using trimethylalkyls. Photoluminescence (PL) was observed, even at 300 K, for all samples with Al solid compositions of x≤0.52. The results show that the energy band gap measured by PL at room temperature for this material varies as Eg=1.9 +0.6x, in accord with previous studies. It was found that the PL emission intensity was nearly constant at 10 K with increasing x in the range from 0 to 0.52. This contrasts with earlier published results which showed a decreasing PL intensity for the higher values of x. The 300-K PL intensity was almost a constant for x≤0.3 and gradually decreased with increasing Al content for x〉0.30. The dependence is nearly that predicted from a simple calculation based on the relative occupancies of the Γ and X conduction bands using a constant minority-carrier lifetime. The PL full width at half maximum (FWHM) for x=0 was 7.2 meV at 10 K and 35 meV at 300 K. These are the narrowest reported results to date. For x=0.48, the FWHM was 31 meV at 10 K and 78 meV at 300 K. It was observed that at both 10 and 300 K, the FWHM increased slowly with increasing aluminum concentration.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5384-5387 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality Ga0.51In0.49P, lattice-matched to GaAs, has been grown by atmospheric pressure organometallic vapor-phase epitaxy. The growth was performed at a temperature of 680 °C and a growth rate of about 12 μm/h. The indium distribution coefficient was found to be unity at this growth temperature. At a V/III ratio of 148, the Ga0.51In0.49P epilayers had photoluminescence (PL) half-widths of 35 and 7.2 meV at 300 and 10 K, respectively, the best reported results to date. As the V/III ratio was changed from 94 to 240, the 300-K energy band gap measured by PL varied only from 1.897 to 1.912 eV, values close to that of Ga0.51In0.49P grown by liquid-phase epitaxy. An ordered arrangement of gallium and indium atoms on the column III sublattice with a Cu-Pt structure was observed in transmission electron diffraction patterns for all samples. Our results show that the phenomenon of changing energy band gap with varying V/III ratio does not occur at these high growth rates.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2208-2211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion behavior of arsenic implanted into silicides of titanium formed on single and polycrystalline silicon has been investigated. The redistribution of arsenic in the films is significant, and physical and electrical data show that the implanted arsenic moves through the silicide layer, particularly towards the silicide-silicon interface at the 900 °C temperature under study. In the case of single-crystal silicon, accumulation of the mobile arsenic at the TiSi2-Si interface leads to a buildup within the silicide and the silicon. By sharp contrast, however, the TiSi2-polysilicon interface appears relatively transparent with no significant accumulation. The resultant dopant profiles outside the silicide show that significantly enhanced diffusion occurs in the single-crystal silicon and is comparable to that of the polycrystalline silicon.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK; Malden, USA : Blackwell Publishing Ltd/Inc.
    Scandinavian journal of immunology 60 (2004), S. 0 
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: CD4+ T cells lacking the costimulatory molecule CD28 have been described both in elderly individuals and in chronic inflammatory disorders, one being rheumatoid arthritis (RA). We, in this study, provide a comprehensive characterization of cell surface markers on and function of such CD28nullCD4+ T cells, as well as correlations with clinical parameters. We conclude that of all surface markers associated with these cells, only CD57 and CD11b are expressed on the majority of them. This CD28null population occurred in one-third of patients with RA and was independent of clinical characteristics. The population was persistent and expanded in peripheral blood, but was excluded from the joint in most patients. Functionally, CD28nullCD4+ T cells were potent effector memory cells with regard to their proliferation and cytokine-secretion profiles. This capacity correlated with a hitherto unpublished surface phenotype, the cells being uniformly CCR7– and CD43high. Moreover, a new terminally differentiated CD45RA+CCR7– population of CD4+ T cells was identified. We would like to suggest that in the unbalanced immune system of patients with autoimmune disease and chronic infection an expanded CD28nullCD4+ T-cell population able to secrete high levels of cytokines is likely to contribute to disease manifestations.
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  • 10
    ISSN: 1365-3180
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Broomrapes (Orobanche spp.) are parasitic weeds that cause significant losses of crop yield. Experiments were conducted to investigate the seed response to the artificial germination stimulant GR24 in three species of Orobanche subjected to preconditioning under various temperatures, water potentials and with plant growth regulators. The highest germination percentages were observed in Orobanche ramosa, Orobanche aegyptiaca and Orobanche minor seeds conditioned at 18°C for 7 days followed by germination stimulation at 18°C. With the increase of the conditioning period (7, 14, 21 and 28 days), the germination percentage of O. ramosa and O. aegyptiaca progressively decreased. When conditioned at −2 MPa, the germination percentage was lower than at 0 and −1 MPa, especially at 13 and 28°C. Orobanche minor seeds could retain relatively high germination if conditioned at 18, 23 or 28°C, even after significantly extended conditioning periods (up to 84 days). GA3 (30–100 mg L−1), norflurazon and fluridone (10–100 mg L−1), and brassinolide (0.5–1.0 mg L−1) increased seed germination, while 0.01 mg L−1 uniconazole significantly reduced germination rates of all three Orobanche spp. The promotional effects of GA3 and norflurazon and the inhibitory effect of uniconazole were evident, even when they were treated for 3 days. Germination of Orobanche seeds was much lower when the unconditioned seeds were directly exposed to GR24 at 10−6 m. This early GR24-induced inhibition was however alleviated or even eliminated by the inclusion of GA3 or norflurazon (10–50 mg L−1) in the conditioning medium. On the contrary, the inclusion of uniconazole increased the inhibitory effect of GR24, particularly in the case of O. ramosa.
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