Notes: We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on [001] GaAs substrates with GaSb buffers, and directly on [001] GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is from Ga-As local modes. Such modes may be due to As incorporation in the GaInSb, Ga incorporation in the InAs or phase mixing at the interfaces.

Notes: Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. © 2000 American Institute of Physics.

Notes: High-temperature-superconductor Josephson junctions with an edge geometry of superconductor/normal-metal/superconductor have been fabricated on yttria-stabilized zirconia substrates by engineering the electrode and N-layer material to reduce the lattice mismatches (a, b, and c). With GdBa2Cu3O7−δ as electrodes and Pr-doped Y0.6Pr0.4Ba2Cu3O7−δ as a barrier, the lattice mismatches from electrode and barrier layer are reduced to a very low level. The junctions fabricated with such a design demonstrate resistively shunted junction current-voltage characteristics under dc bias at temperatures in the range of 77–88 K. The quite low specific interface resistivity on the order of 10−10 Ω cm2 indicates that the junction performance is controlled by the normal-metal (N) layer material instead of the interfaces. The use of lattice-matched electrode and N-layer material is one of the key design rules to obtain controllable high-temperature superconductor Josephson junctions. © 1995 American Institute of Physics.

Notes: We present a systematic investigation of the effects of organic film structure on light emitting diode (LED) performance. Metal/organic film/metal LEDs were fabricated using a five ring, poly(phenylene vinylene) related oligomer as the active layer. The structure of the vacuum evaporated oligomer films was varied from amorphous to polycrystalline by changing the substrate temperature during deposition. The intrinsic properties of the oligomer films and the LED performance were measured. The measured intrinsic film properties include: optical absorption, photoluminescence (PL) spectra, PL lifetime, PL efficiency, and effective carrier mobility. The measured device characteristics include current–voltage, capacitance–voltage, electroluminescence (EL) efficiency, and the contact metal/organic film Schottky barrier heights. The optical absorption and PL properties of the films are weakly dependent on film structure but the effective carrier mobility decreases with increasing crystallinity. The EL quantum efficiency decreases by more than one order of magnitude, the drive voltage at a fixed current increases, and the electron Schottky barrier height increases as the crystallinity of the film is increased. The diode current–voltage characteristic is determined by the dominant hole current and the electroluminescence efficiency is controlled by the contact limited electron injection. These results demonstrate significant effects of organic film structure on the performance of organic LEDs. © 1996 American Institute of Physics.

Notes: We present experimental and device model results for the current–voltage characteristics of a series of organic diodes. We consider three general types of structures: electron only, hole only, and bipolar devices. Electron and hole mobility parameters are extracted from the corresponding single carrier structures and then used to describe the bipolar devices. The device model successfully describes the experimental results for: electron only devices as thickness is varied, hole only devices as the contact metals are varied, and bipolar devices are both the thickness and the contact metals are varied. © 1998 American Institute of Physics.

Notes: We present capacitance–voltage and current–voltage measurements of polymer light-emitting electrochemical cells and compare these results with steady state device model calculations. The capacitance–voltage characteristic is used to assess the formation and structure of the electrochemical junction in the device. The cell capacitance and current both increase sharply above a threshold voltage as the bias is increased. The threshold voltage for the rapid increase in capacitance is lower than that for the increase in current, indicating that the electrochemical junction begins to form prior to significant current flow. The electrochemical junction width, estimated from the capacitance measurements, is about 15 nm at a current density of 0.1 A/cm2. The steady state device model calculations are in reasonable agreement with these observations. © 1998 American Institute of Physics.

Notes: We present device model calculations of the current–voltage (I–V) characteristics of organic diodes and compare them with measurements of structures fabricated using MEH-PPV. The structures are designed so that all of the current is injected from one contact. The I–V characteristics are considered as a function of the Schottky energy barrier to charge injection from the contact. Experimentally, the Schottky barrier is varied from essentially zero to more than 1 eV by using different metal contacts. A consistent description of the device I–V characteristics is obtained as the Schottky barrier is varied from small values, less than about 0.4 eV, where the current flow is space-charge limited to larger values where it is contact limited. © 1998 American Institute of Physics.

Notes: Using a conventional rf glow discharge, we have grown microcrystalline p+ SiC:H films having conductivities 2–2×10−3 (Ω cm)−1 and activation energies 0.05–0.1 eV with carbon concentrations 0–6 at. %, respectively. Increasing the carbon content suppresses the microcrystallinity. The choice of substrate is crucial to initiating the immediate onset of microcrystalline growth in thin (∼200–400 A(ring)) films.

Notes: Low-power, cw laser irradiation of GaAs leads to the formation of solid arsenic at the sample surface and to the degradation of band-gap photoluminescence (PL) efficiency. In situ Raman scattering and PL are used to measure the lattice and carrier temperature in addition to monitoring the arsenic formation and PL efficiency. Both effects are athermal, do not involve surface oxidation, and occur in n,p and semi-insulating GaAs prepared by different growth techniques. These observations suggest that arsenic formation and PL decrease may both be the result of a nonradiative recombination process.

Notes: We present a unified device model for single layer organic light emitting diodes (LEDs) which includes charge injection, transport, and space charge effects in the organic material. The model can describe both injection limited and space charge limited current flow and the transition between them. We specifically considered cases in which the energy barrier to injection of electrons is much larger than that for holes so that holes dominate the current flow in the device. Charge injection into the organic material occurs by thermionic emission and by tunneling. For Schottky energy barriers less than about 0.3–0.4 eV, for typical organic LED device parameters, the current flow is space charge limited and the electric field in the structure is highly nonuniform. For larger energy barriers the current flow is injection limited. In the injection limited regime, the net injected charge is relatively small, the electric field is nearly uniform, and space charge effects are not important. At smaller bias in the injection limited regime, thermionic emission is the dominant injection mechanism. For this case the thermionic emission injection current and a backward flowing interface recombination current, which is the time reversed process of thermionic emission, combine to establish a quasi-equilibrium carrier density. The quasi-equilibrium density is bias dependent because of image force lowering of the injection barrier. The net device current is determined by the drift of these carriers in the nearly constant electric field. The net device current is much smaller than either the thermionic emission or interface recombination current which nearly cancel. At higher bias, injection is dominated by tunneling. The bias at which tunneling exceeds thermionic emission depends on the size of the Schottky energy barrier. When tunneling is the dominant injection mechanism, a combination of tunneling injection current and the backflowing interface recombination current combine to establish the carrier density. We compare the model results with experimental measurements on devices fabricated using the electroluminescent conjugated polymer poly[2-methoxy, 5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] which by changing the contacts can show either injection limited behavior or space charge limited behavior. © 1997 American Institute of Physics.