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  • 1
    Electronic Resource
    Electronic Resource
    Modulation speed of an efficient porous silicon light emitting device (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2764-2773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trends in the efficiency and small signal modulation behavior of porous silicon light emitting diodes (LEDs) are reported for devices formed by the anodization of bulk silicon p–n junctions. As the average size of the silicon skeleton is decreased, the external electroluminescence (EL) efficiency increases from 0.001% to 0.18% and there is a corresponding blue shift in the EL peak from 776 to 633 nm. An associated tenfold increase is observed in the photoluminescence efficiency while the diode resistance, at 2 V, increases from 3×103 to 1×106 Ω. Under small signal pulsed operation, the voltage dependence of the rising edge of the EL is well described by a carrier mobility of 3×10−4 cm2 s−1 V−1 which is independent of the average size of the luminescent regions of the silicon nanostructure. The falling edge of the EL transient is dominated by radiative recombination of quantum confined excitons. The modulation speed is found to be limited by a combination of carrier mobility in the silicon wires and radiative recombination processes. Evidence of charge trapping and discharge is found in an EL overshoot phenomenon. The major application of this type of porous silicon LED, with modulation speeds below 1 MHz, appears to be for displays integrated with circuitry rather than for optical interconnection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371123
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  • 2
    Electronic Resource
    Electronic Resource
    Blue photoluminescence from rapid thermally oxidized porous silicon following storage in ambient air (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3557-3559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the temporal variation of the visible photoluminescence from rapid thermally oxidized porous silicon prepared from n+ substrates. In contrast to the red (slow band) emission, which is observable immediately after high-temperature oxidation, the blue (fast band) emission is shown to become prevalent only after samples are stored in ambient air. The intensity of the blue emission increases with progressive aging, the magnitude of the increase being dependent on the temperature at which the material is oxidized. Thermal treatment of aged rapid thermally oxidized material can reduce and even quench the blue photoluminescence. Quenching is reversible in that the photoluminescence re-appears after further aging at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358587
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical-beam-epitaxy growth of indium-containing III–V compounds using triisopropylindium (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 917-922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Triisopropyl indium (TIPIn) has been investigated as an alternative to trimethyl indium for use in chemical-beam epitaxy (CBE). In previous CBE studies of GaAs/AlGaAs growth, the replacement of methyl-containing precursors with ethyl- and isopropyl-containing precursors has been shown both to widen the substrate temperature window available for growth, and also to reduce unintentional carbon incorporation in the grown layers. In the present study of (100)InxGa1−xAs (0≤x≤0.1) growth using the new TIPIn source, in situ modulated-beam mass spectrometry studies have demonstrated a similar, and technologically very important, widening of the substrate temperature window. Furthermore, use of the new precursor combination, TIPIn and triisopropyl gallium, is also shown to generate state-of-the-art InGaAs material with electrical and optical properties directly comparable to corresponding material grown using molecular-beam epitaxy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360872
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  • 4
    Electronic Resource
    Electronic Resource
    Optimization of the growth parameters for the molecular-beam epitaxial growth of strained In0.16Ga0.84As/Al0.33Ga0.67As single quantum-well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 824-826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the optical properties of strained InxGa1−xAs/AlyGa1−yAs (x=0.16, y=0.33) single quantum-well structures grown by molecular-beam epitaxy is presented. An optimized growth procedure is shown to produce quantum-well structures exhibiting 2 K photoluminescence linewidths as low as 2.6 meV, very close to those observed for corresponding InxGa1−xAs/GaAs control structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109920
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  • 5
    Electronic Resource
    Electronic Resource
    Tri-isopropyl gallium: A very promising precursor for chemical beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 285-287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first reported use of tri-isopropyl gallium (TiPGa) in chemical beam epitaxy (CBE) is described. Hall measurements performed on the resulting undoped GaAs epitaxial layers indicate an order of magnitude reduction in unintentional carbon impurity levels compared to structures grown under comparable conditions using the standard CBE precursor, triethyl gallium. 2 K photoluminescence spectra match those recorded elsewhere from state-of-the-art high purity GaAs material grown by molecular beam epitaxy, and 77 K Hall measurements on intentionally n-type doped GaAs layers confirm residual acceptor levels in the low 1014 cm−3 range. The early data obtained already provide a clear indication of the important potential of TiPGa as an improved precursor for the CBE growth of Ga-containing III–V materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107939
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  • 6
    Electronic Resource
    Electronic Resource
    Relationship between storage media and blue photoluminescence for oxidized porous silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 107-109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue photoluminescence is observed, with nanosecond decay time, from rapid thermally oxidized porous silicon as a result of accelerated aging in plastic containers. Photoluminescence measurements, combined with chemical analyses of the "aged" porous silicon, indicate that the emission is a consequence of the incorporation of trace organic (hydrocarbon) contamination from the plastic containers as they outgas at a mildly elevated temperature (80 °C) and, albeit at a reduced rate, at room temperature. Such carbonaceous contaminants can subsequently be removed by high-temperature annealing, a process which also quenches the blue photoluminescence. Consequently, it is important to take into consideration the storage medium used when making comparative luminescent and compositional studies of porous silicon and, perhaps, porous materials in general. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119442
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  • 7
    Electronic Resource
    Electronic Resource
    Quantitative comparison of trimethylindium sources and assessment of their suitability for low threshold 980 nm InGaAs/GaAs lasers grown by chemical beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 914-916 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic compounds used as precursors for epitaxial growth by metalorganic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE), may be contaminated with oxygen-containing impurities. These impurities are a particular problem in the precursor purification process when they, or their adducts, are of similar volatility to the precursor. We report that improvements in precursor purity, in this case trimethylindium (TMIn), may be quantitatively assessed through growth at low temperatures by CBE and subsequent two-stage testing. Indium-containing III–V semiconductor test structures were characterized first using secondary ion mass spectrometry (SIMS) and second by photoluminescence (PL) lifetime measurements which sensitively probe the presence of nonradiative centers. A factor of 4 improvement in PL lifetime was found for Epipure™ TMIn as compared with conventional adduct-purified TMIn. The Epipure™ grade of TMIn was used for 980 nm lasers. State-of-the-art threshold currents (162 A cm−2) and low internal optical cavity losses (3.9 cm−1) were obtained using CBE growth at the very low temperature of 540 °C. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435806
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