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  • 1
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Highly reactive and nanometer-sized (30–50 nm) Sn-doped BaTi4O9 (BaTi4-xSnxO9; x = 0.0–0.03) powders have been prepared by the citrate-precursor method. The effect of Sn substitution on the crystallization and microwave dielectric properties has also been investigated on the basis of microstructure and crystal structure. Addition of a small amount of SnO2 resulted in a lowering of the sintering temperature of BaTi4O9, and at 1250–1300°C for 2–5 h, dense compounds with a theoretical density up to 99% could be obtained. The Sn-doped BaTi4O9 materials were found to have excellent microwave dielectric properties with epsilonr = 34–37, Q = 8300–8900 at 11 GHz and tauf = 3.6–16.1 ppm/°C.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 704-706 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Ruddlesden-Popper phase, Lan+1NinO3n+1 (n = 1, 2 and ∞) compounds were prepared by citrate sol-gel method. We revealed the origin of the variation of the electrical conductivities in Lan+1NinO3n+1 (n = 1, 2 and ∞) using resistivity measurements, Rietveld analysis, and X-ray absorption spectroscopy. According to the XANES spectra, it is found that the degree of 4pπ - 4pσ energy splitting between 8345 eV and 8350 eV is qualitatively proportional to the elongation of the out-of-plane Ni-O bond length. With the decrease of 4pπ - 4pσ splitting, the strong hybridization of the σ-bonding between Ni-3d and O-2p orbitals creates narrow antibonding σ* bands, which finally results in the lower electrical resistivity.
    Type of Medium: Electronic Resource
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