ISSN:
1551-2916
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Highly reactive and nanometer-sized (30–50 nm) Sn-doped BaTi4O9 (BaTi4-xSnxO9; x = 0.0–0.03) powders have been prepared by the citrate-precursor method. The effect of Sn substitution on the crystallization and microwave dielectric properties has also been investigated on the basis of microstructure and crystal structure. Addition of a small amount of SnO2 resulted in a lowering of the sintering temperature of BaTi4O9, and at 1250–1300°C for 2–5 h, dense compounds with a theoretical density up to 99% could be obtained. The Sn-doped BaTi4O9 materials were found to have excellent microwave dielectric properties with epsilonr = 34–37, Q = 8300–8900 at 11 GHz and tauf = 3.6–16.1 ppm/°C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1151-2916.1998.tb02756.x
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