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  • 1
    Electronic Resource
    Electronic Resource
    Hydroboration of Ureido-Substituted Olefins1 (1964)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 86 (1964), S. 2961-2961 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01068a057
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7118-7123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore the application of the semiconducting phases of YBaCuO thin films as a bolometer for uncooled infrared detection. For this study, four different structures were built with different types of buffer layers: YBaCuO on a Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. These films were all amorphous without a detectable long range order. For comparison, crystalline tetragonal YBa2Cu3O6.5 and YBa2Cu3O6.3 thin films on a LaAlO3 substrate were included into the study. All six films exhibited semiconducting resistance versus temperature characteristics. The bolometer figures of merit, responsivity, and detectivity were calculated from the measured temperature coefficient of resistance (TCR) and the inherent noise characteristics of the temperature sensing element. The room temperature TCRs for all four amorphous films were greater than 2.5% K−1. The highest TCR of 4.02% K−1 was observed on the amorphous YBaCuO thin film deposited on MgO/Si without a SiO2 layer. The TCR of the tetragonal films, on the other hand, remained 2% K−1 or less in the same temperature range. Noise measurements performed in the 1–100 Hz frequency range revealed a quadratic dependence on the bias current as would be expected from ohmic electrical characteristics. The Johnson and 1/f regions were clearly identified in the noise spectrum. From TCR and noise measurements, we estimated the amorphous semiconducting YBaCuO bolometers would have a responsivity as high as 3.8×105 V/W and a detectivity as high as 1.6×109 cm Hz1/2/W for 1 μA bias current and frame frequency of 30 Hz if integrated with a typical air-gap thermal isolation structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363724
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  • 3
    Electronic Resource
    Electronic Resource
    Semiconducting YBaCuO thin films for uncooled infrared bolometers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7334-7339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and measured the performance of semiconducting YBaCuO thin-film thermometers on silicon for uncooled bolometric applications. Our YBaCuO thermometers have revealed a change in resistance with respect to temperature (dR/dT) as high as 8.2×103 Ω/K at T=294 K and the temperature coefficient of resistance as high as 3.1% K−1 over a 60 K range around room temperature which implies an excellent bolometric response. At 294 K the thermometers had a noise voltage of 0.75 μV/Hz1/2 at the frequency of 30 Hz and the bias current of 1 μA. Using the data above, we calculated that semiconducting YBaCuO bolometers would have a responsivity of 5.5×104 V/W and a detectivity D* as high as 1.3×108 cm Hz1/2/W for 1 μA bias current if integrated with a typical thermal isolation structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360382
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of an elliptical fiber mode field using near-field microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5514-5517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-field scanning optical microscopy is used to determine the field structure within a noncircularly symmetric optical fiber. The output from an elliptical core fiber is measured and found to be in good agreement with the field predicted using a point matching method and fiber parameters determined from the preform. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359255
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  • 5
    Electronic Resource
    Electronic Resource
    Studies and implications of the Hall effect in superconducting and semiconducting YBa2Cu3O7−δ thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6658-6663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report Hall effect measurements on three different types of YBa2Cu3O7−δ samples. Two of them were well-oxygenated superconducting films while one of them was an oxygen-depleted semiconducting film. One of the superconducting samples was c-axis oriented while the other had a mixture of c- and off-c-axis orientations as evident from resistivity and Raman spectroscopy analysis. According to Anderson, cuprate superconductors in normal state have separate spin and charge excitations called spinons and holons, respectively. The spinon bandwidth Ws defines the energy scale that determines the temperature dependence of the Hall coefficient. It was found that, for the same experimental conditions, Ws decreased for the sample with an off-c-axis growth compared to the perfectly c-axis oriented sample. The cotangent of Hall angle θH showed a reasonably good quadratic dependence on temperature for both superconducting samples in normal state. In contrast, the semiconducting film, due to an inadequate stoichiometry for superconducting behavior, had a high resistivity and its cotangent of the Hall angle decreased with temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360486
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of optical fibers using near-field scanning optical microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2753-2756 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of determining the field distribution within an optical fiber of arbitrary refractive index profile using near-field scanning optical microscopy is described. The 3D intensity distribution emerging from the end of a cleaved fiber is measured by scanning a subwavelength aperture through the distribution, and the field within the fiber is inferred from this information. In the case of a single-mode step-index fiber, results are found to agree with a Gaussian modal distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356212
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  • 7
    Electronic Resource
    Electronic Resource
    Activation field, fatigue, and waiting-time effects in KNO3 thin-film memories (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4510-4513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By analyzing current transient data i(t) from KNO3 thin-film memories in terms of the Ishibashi–Takagi parametrization of the Avrami theory, we have been able to extract detailed information concerning the presence of an activation field (and the absence of a threshold), the relationship between characteristic switching time and spontaneous polarization when both are decreased either by increasing temperature or by repetitive read-write cycles (fatigue), and the behavior of switching kinetics as a function of the delay after application of a dc bias field ("waiting-time'').
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339041
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  • 8
    Electronic Resource
    Electronic Resource
    Switching kinetics in KNO3 ferroelectric thin-film memories (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5467-5470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time dependence of the current transient i(t) produced by the reversal of domains in ferroelectric potassium nitrate thin-film memories of 75–300 nm is analyzed as a function of temperature and of thickness using the Avrami theory. For all the films the kinetics confirm the low-dimensional nature of the system
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338237
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  • 9
    Electronic Resource
    Electronic Resource
    On the mechanism of aluminum via fill by reflow and forcefill as studied by transmission electron microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 571-577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison has been made between the Al via fill mechanisms in both reflow and forcefill processes. Cross-sectional transmission electron microscopy has been used to study the Al transport into the vias as a function of time. Our analysis shows that reflow and forcefill results can be explained by a stress relaxation model. We propose that the transport of aluminum into the vias as a function of time is described by both diffusion and dislocation movement. In the case of reflow at high temperature, the vias may be filled completely, after closure, by high-temperature creep of Al. In the case of forcefill, an additional high stress has been applied which raises the strain levels such to activate the dislocation glide and climb mechanism. The results from detailed investigations of the microstructure by cross-sectional transmission electron microscopy support these new insights. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369491
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  • 10
    Electronic Resource
    Electronic Resource
    Strong pyroelectric response in semiconducting Y-Ba-Cu-O and its application to uncooled infrared detection (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3495-3497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pyroelectric infrared detector operating at room temperature and based on semiconducting Y-Ba-Cu-O was fabricated. The capacitor structure consisting of semiconducting Y-Ba-Cu-O layer sandwiched between two Nb electrodes was fabricated on top of a thermally isolated SiO2 bridge. The polycrystalline Y-Ba-Cu-O layer was deposited by ambient-temperature sputtering while standard Si micromachining techniques were used to etch the silicon under the oxide bridge. The pyroelectric response of the material is characterized by the temperature coefficient of polarization (p=dP/dT) which was measured to be as high as 65 nC/K cm2 without an externally applied electric field. The pyroelectric figure of merit Fd for the material was estimated to be 0.032 (cm3/J)1/2. Employing a radiometric infrared source, the room-temperature voltage responsivity RV and specific detectivity D* of the unbiased detector were measured to be over 103 V/W and 108 cm Hz1/2/W, respectively. This letter discusses the characteristics of this complementary metal-oxide semiconductor-compatible pyroelectric detector and suggests methods for the improvement for its figures of performance. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119211
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