ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
An undoped, semi-insulating GaAs crystal grown by the horizontal Bridgman method has been characterized by axial and radial resistivity and mobility measurements. Due to lower thermal gradients, defect densities for wafers from this crystal are less than those observed for liquid-encapsulated Czochralski crystals. Cathodoluminescent images display uniform luminescent intensity around dislocated regions indicating an absence of impurity gettering in these areas. Concentrations of neutral EL2, a native defect and principal deep donor in undoped GaAs, are reported for seed, middle, and tail-end wafers. The distribution of EL2 over the area of each wafer is shown. Wafers were also implanted with 29Si and furnace annealed to form shallow n layers. Capacitance-voltage profiles demonstrate reproducible peak carrier concentrations and penetration depths.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.340185
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