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  • 1
    Electronic Resource
    Electronic Resource
    The ammonia sensitivity of Pt/GaAs Schottky barrier diodes (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3348-3354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work a new ammonia gas sensor is presented. Schottky barrier devices, Pt/n-GaAs, with discontinuous platinum films are sensitive detectors of ammonia gas in a wide temperature range (from room temperature to 150 °C). The effect of parameters such as operation temperature, thickness of the catalytic metal film, background atmosphere, and applied voltage bias on the device sensitivity are investigated. In addition, significant characteristics have been examined including sensitivity limits, linearity of response, and adsorption and desorption kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349270
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers : 35th annual conference on magnetism and magnetic materials San Diego, California (USA) 29 Oct−Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4680-4682 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance measurements have been done in amorphous Nd12Fe80B8 sputtered films and in amorphous sputtered Nd26Fe68B6/Fe92B8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348953
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray characterization of InAs laser structures grown by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2528-2530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray interference effect was used to characterize a set of strained layer laser structures containing N monolayers of InAs (N=1, 3, 5, 7) conveniently distributed in the quantum well active region. A sample containing 100 A(ring) of Ga0.8In0.2As in the quantum well was also grown and characterized for comparison. Structural parameters such as thickness, chemical composition, and strain status of the different layers (cladding, waveguide, and quantum well layers) as well as the relaxation process and critical thickness due to increasing InAs content in the active region were studied. It was found that indium content was very close to the design values and that the whole structure is coherent with the substrate for 1 and 3 monolayers of InAs (and 100 A(ring) of Ga0.8In0.2As) while the structure starts to relax by dislocation formation for 5 monolayers of InAs and is clearly relaxed for 7 monolayers of InAs. These x-ray results are in full agreement with transmission electron microscopy and characterization of the structures as laser devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351550
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of GaAs quantum well laser structure with AlAs/GaAs superlattices waveguide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5861-5866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dependence on the excitation power and temperature of the photoluminescence emission of GaAs quantum well laser structures using GaAs/AlAs superlattices in the waveguide is reported. The effects related to a quality reduction due to the presence of a thick ternary AlGaAs cladding layer in the bottom of the laser structure were elucidated by comparing to the photoluminescence of a similar waveguide structure, except for the AlGaAs bottom layer. The excitation power dependence shows the strong excitonic origin of the light emission in the temperature range 4–300 K in both structures. Carrier transport mechanisms through the superlattices is analyzed from the evolution of the photoluminescence of the quantum well and the superlattice confining layers; a structure dependent transparency temperature is defined, at which transport changes from tunneling assisted to extended minibands regime. The value of this parameter depends on the localized states in the superlattice minibands, caused by interface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351891
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  • 5
    Electronic Resource
    Electronic Resource
    Nonequilibrium luminescence at the E0+Δ0 gap in GaAs with Si-δ doping (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5619-5622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the light scattering spectra of three molecular beam epitaxy GaAs samples with Si-δ doping. A broad feature appears in these spectra which is similar to that attributed by other authors to resonant Raman scattering by electronic intersubband transitions. By studying the dependence of this emission on exciting laser photon energy we believe that this line is really produced by nonequilibrium luminescence at the E0+Δ0 gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350492
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2447-2451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337599
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6567-6570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium-doped InP layers have been grown by solid source atomic layer molecular beam epitaxy at low substrate temperature. The residual n-type doping was reduced by controlling both the amplitude and the length of the phosphorus pulse. We have shown a well controlled p-type doping and obtained a hole concentration in the range 4×1017–3×1019 cm−3 at room temperature. The electrical and optical properties of InP layers grown at low temperatures were investigated by Hall effect and photoluminescence (PL) measurements. PL spectra for lightly doped samples have a near band emission at 1.41 eV and Be-related emissions around 1.38 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370503
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  • 8
    Electronic Resource
    Electronic Resource
    Nitrogen incorporation effects in Fe(001) thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6314-6319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen incorporates into Fe thin films during reactively sputtered TiN capping layer deposition. The influence that this nitrogen incorporation has both on the structure and magnetic properties is discussed for a series of Fe(001) thin films grown at different temperatures. A higher nitrogen content is accompanied by distortion in the Fe lattice and by reduction in the Fe magnetization saturation as well as in the effective anisotropy constant, K. The reduction of K brings as a consequence lowering in the coercive field with respect to equivalent Fe films with no nitrogen present. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368398
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of the Pt buffer layer on the perpendicular magnetic anisotropy in epitaxial FePd(001) ordered alloys grown by sputtering : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5050-5052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline FePd(001) 1000-Å-thick films were grown at 500 °C by codeposition in an UHV sputtering system. It is found that both the crystalline structure and therefore the magnetic properties strongly depend on the Pt buffer layer thickness. The films grown on Pt(100) layers 50 Å thick and thinner do not exhibit clear chemical order and show in-plane magnetic anisotropy. FePd grown on thicker Pt buffers adopts a fct structure accompanied by a strong chemical ordering, leading to a perpendicular magnetic anisotropy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364504
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 402-404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of undoped InP layers grown at low temperatures by solid source atomic layer molecular beam epitaxy are investigated. Phosphorus surface coverage during epitaxy is controlled by monitoring the evolution of reflection high-energy electron diffraction pattern during growth. An accurate phosphorus supply by means of a valved cracking phosphorus cell is employed. The relation between phosphorus incorporation and the electronic properties of the epilayers is examined, and it is found that, at a substrate temperature of 340 °C, residual electron concentration increases linearly with phosphorus flux. Residual doping of InP layers grown at 340 °C has been reduced down to 1×1016 cm−3, and Hall mobilities of 3260 cm2/V s at 300 K and 14 830 cm2/V s at 65 K are reported. Low-temperature photoluminescence of low background doping layers is dominated by near band transitions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359338
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