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  • 1
    Electronic Resource
    Electronic Resource
    Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3586-3592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge-defined film-fed grown polycrystalline silicon sheets, grown with one face exposed to oxidizing CO gas added to the inert Ar atmosphere, were studied. Interaction of CO with molten silicon surface during growth produced SiC-like structures in a thin layer on the surface exposed to CO. Infrared spectroscopy results suggest that this layer is constituted of good quality SiC; however, Raman and x-ray photoelectron spectroscopy showed that it consists of Si1−xCx in the form of small crystallites mixed with C- and O-rich silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356993
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  • 2
    Electronic Resource
    Electronic Resource
    Study of vibrational properties of InGaAsP by far-infrared reflectivity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3085-3088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured room-temperature reflectivity in the far-infrared region (100–700 cm−1) of In1−xGaxAsyP1−y films grown by metalorganic phase epitaxy on InP substrate. The actual As content of the quaternary alloy (ranging from y=0.29 to y=1) was derived by combining photoluminescence and high-resolution x-ray diffraction results. Over the whole compositional range four different vibrational branches, corresponding to InAs-like, GaAs-like, InP-like, and GaP-like mode, have been observed, thus confirming the attribution of "four-mode behavior'' to the quaternary alloy. The frequency position of the four main peaks has been calculated within a valence-force-field model. The frequency shift of these peaks in the alloy with respect to the bulk values has been explained taking into account anharmonicity and strain effects by means of a simplified elastic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356158
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  • 3
    Electronic Resource
    Electronic Resource
    Oxygen precipitation in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4169-4244 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A review is presented of the recent advances in the study of oxygen precipitation and of the main properties of oxide precipitates in silicon. After a general overview of the system "oxygen in silicon,'' the thermodynamics and the kinetics of the precipitate formation are treated in detail, with major emphasis on the phenomenology; subsequently, the most important techniques for the characterization of the precipitates are illustrated together with the most interesting and recent results. Finally, the possible influence of oxygen precipitation on technological applications is stressed, with particular attention to recent results regarding device yield. Actually, the essential novelty of this review rests on the attempt to give an extended picture of what has been recently clarified by means of highly sophisticated diagnostic methods and of the influence of precipitation on the properties of semiconductor devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359479
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm−1 infrared absorption band (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 166-170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possible use of the absorption band at 1207 cm−1 for the measurement of the concentration of interstitial oxygen (Oi) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements show that the conversion factor for such evaluation of the residual Oi after precipitation is strongly influenced by the presence of oxide precipitates; a limit value for the concentration of precipitated oxygen is identified, above which the measure becomes unreliable. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423393
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared investigation of the presence of Fe in B-doped polycrystalline silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2864-2866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped polycrystalline silicon samples containing variable amounts of iron have been investigated by means of transmission measurements, from 230 to 360 cm−1, in order to study the effect of the presence of iron on boron acceptor excitation spectrum lines. The first absorption measurements in the far infrared which indicate the formation of Fe-B complexes and the accumulation of Fe at the grain boundaries in such samples are reported here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340942
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  • 6
    Electronic Resource
    Electronic Resource
    Optical study of self-annealing in high-current arsenic-implanted silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2773-2776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon samples implanted with As in the 1014–1016 cm−2 dose range and at a beam current density of 10 μA cm−2 were analyzed by reflectance and Rutherford backscattering measurements. The E1 and E2 reflectance structures disappear at a dose of 1015 cm−2 and reappear red shifted at 1016 cm−2, as a consequence of the self-annealing during high-dose-rate implantation. The red shift of E1 and E2 has been quantitatively accounted for by calculations in a multilayer damage structure. The free-carrier density determined by the infrared response correlates with the substitutional concentration of As measured by channeling effect. The optical response has been measured in laser annealed samples for comparison.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335869
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  • 7
    Electronic Resource
    Electronic Resource
    Generalized anisotropic ellipsometry applied to an organic single crystal: Potassium acid phthalate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3838-3842 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of generalized anisotropic ellipsometry on a biaxial organic single crystal, namely, potassium acid phthalate, are discussed and analyzed to obtain the optical functions of the crystal along the different crystal directions. The dispersion of the real refractive indices nx, ny, and nz in the spectral range from 300 to 1400 nm, as well as the values of the extinction coefficient kx,y at the absorption edge are determined and modeled. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402967
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  • 8
    Electronic Resource
    Electronic Resource
    Damage analysis and optical properties of Ge-implanted silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7045-7049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced in crystalline silicon by Ge-ion implantation at 130 keV is studied as a function of fluence. Rutherford backscattering measurements in channeling configuration and reflectivity measurements in the 1.5–6.5 eV energy range are presented and discussed. The results obtained by both techniques are in agreement on the determination of the amorphization threshold. The dielectric functions, obtained by the Kramers–Kronig analysis and checked through ellipsometric measurements at one selected wavelength, are well reproduced by finite sets of classical harmonic oscillators. It is possible to describe the behavior of the oscillator parameters through analytical functions of a single variable related to the amount of damage. In a representative case, the damage depth profile is obtained after the removal of controlled amounts of silicon by anodic oxidation, and good agreement is found with the Rutherford backscattering results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345052
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−xMnxGa2Se4 : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5736-5738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xMnxGa2Se4 crystals were grown by the vapor-phase transport technique. Magnetization measurements have been done at 1.5 K and magnetic fields up to 7 T by using extraction method on the samples with 0.05≤x≤1. A modified Brillouin function fits the data and the fitting parameters T0 (≥0) and Seff are obtained. These results reflect that there exists a weak antiferromagnetic interaction among Mn++ ions. The magnetic susceptibility was measured in the temperature range 1.5 K≤T≤300 K by using a vibrating sample magnetometer. The susceptibility displays a high-temperature Curie–Weiss behavior. From quantative analysis the exchange integral constant (J1+2J2+J3)/kB was obtained to be ∼−1.5 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353608
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  • 10
    Electronic Resource
    Electronic Resource
    Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4313-4320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interstitial oxygen profile across an epitaxial silicon and Czochralski silicon interface has been studied using high-spatial-resolution Fourier transform infrared spectroscopy. Systematic transmission measurements performed on a transversal wafer cross section evidenced oxygen contamination of the epilayer. This was due to solid-state outdiffusion from the substrate occurring during epilayer deposition. Oxygen diffusivity values resulting from the experiments suggest a mechanism scarcely influenced by the interface. Oxygen contamination is strictly related to the type of dopant present in the substrate and not to that present in the epilayer. The oxygen contamination of the epilayer (significant in n-type substrate samples) could explain the structural defects often observed in epitaxial layers by different techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352194
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