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  • 1
    Electronic Resource
    Electronic Resource
    Temperature anomalies of the work function and relaxation of the surface conductivity of n-type Si in the presence of structural defects (1998)
    Springer
    Semiconductors 32 (1998), S. 71-77 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The temperature behavior of the high-frequency conductivity of surface electron channels in Schottky diodes based on high-resistivity p-type Si containing near-surface, oxidation-induced stacking faults is studied. It is shown that the reversible temperature-induced changes in the surface band bending and the work function of Si have a stepwise character in the temperature range 80–300 K. It is concluded that the surface concentration of free electrons increases during cooling from 180 to 80 K at temperatures which are characteristic of the ordering of water dipoles. These effects are associated with structuring of the water adsorbed on the Si-SiO2 interface and with the ordered orientation of the water dipoles on the surface in response to the loss of their rotational mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187362
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Kinetics of electric field screening in a space-charge region with a leakage channel and low-temperature conductance of surface channels in high-resistivity n-Si (1998)
    Springer
    Semiconductors 32 (1998), S. 1277-1283 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The kinetics of electric field screening in a space-charge region with a leakage channel is considered on the basis of an experimental study of the conductance of surface channels in n-Si. The characteristic times of the fast and slow stages of space-charge relaxation at the channel boundary after switching of the reverse bias are estimated. The proposed channel-current relaxation mechanism can account for the observed large radio-frequency conductance of surface channels in n-Si and the formation of capacitance relaxation spectra similar to those traditionally associated with the charge exchange of deep centers. The nature of the surface donor centers responsible for the formation of conducting layers at the Si-SiO2 interface near 90 K is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187614
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si/SiO2 interface (1999)
    Springer
    Semiconductors 33 (1999), S. 1212-1215 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The behavior of the electron density at the Si/SiO2 interface with temperature is investigated by measuring the rf conductivity of band-edge surface electronic channels that shunt Schottky barriers in n-type Si. The results are explained within a model in which the “metallic” character of the temperature behavior of the conductivity reflects a redistribution of electron charge between the oxide and the silicon lattice in the vicinity of characteristic temperatures of the oxygen subsystem of the oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187851
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures (2000)
    Springer
    Semiconductors 34 (2000), S. 1177-1182 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The effect of low-temperature electron charge redistribution at the Si/SiO2 interface between the interphase states and the conduction band of an n-Si crystal on the temperature behavior of conductance, photovoltage, and photocurrent in Si barrier structures with edge surface electron channels was studied in the temperature range of 77–300 K. The dynamics of the channel-current response to the voltage changes in the dark and under illumination can be explained qualitatively by dispersive hopping transport of holes in SiO2, which induces electron transfer to, and accumulation at, the Si surface near the barrier contact. The leveling off of the photovoltage at low temperatures and the nonmonotonic temperature dependence of the photocurrent are attributed to the nonmonotonically increasing, localized hole density at the Si/SiO2 interface and the free electron density at the Si surface with decreasing temperature, which reflects changes in the valence of oxygen complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1317579
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic structure and electronic properties of the ∑37(610) and ∑29(520) [001] tilt grain boundaries in Ge (1995)
    Springer
    Interface science 2 (1995), S. 211-220 
    Details
    ISSN: 1573-2746
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 400 kV high resolution electron microscopy (HREM), deep level transient spectroscopy (DLTS) and steady state electrical measurements have been applied to ∑37(610) and ∑29(520) [001] tilt grain boundaries (GBs) in germanium bicrystals. The atomic boundary structures were revealed by experimental HREM images taken under different defocus conditions. Later, structure models were refined by means of a trial-and-error method applying alternatively the image simulation and the molecular static calculation of relaxed structures. The structures were shown to be consistent with the modified structural unit model. Although the structures are different for the two GBs studied, DLTS data and steady state measurements were found to be quite similar for both GBs. Thus, the results point to the extrinsic origin of localized deep states at the GBs. The analysis of DLTS spectra indicates the impurity segregation at the boundary, e.g., the formation of vacancy-type oxygen complexes of a donor-like state at E c-0.21 eV, which results in the fluctuation of the potential barrier. Defects in the GBs—like facets, atomic steps and secondary grain boundary dislocations—which are characteristic of both boundaries can act as nuclei to the impurity segregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00215168
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    Paper (German National Licenses)
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