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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3940-3944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study we investigate both the transport and quantum scattering times as a function of the carrier concentration for a modulation doped Al0.3Ga0.7As/GaAs structure. Carriers in the well are generated as a result of the persistent photoconductivity effect. When more than one subband becomes populated, digital filtering is used to separate the components for each of the excited subbands. We find that the quantum scattering time for the ground subband increases initially as the carrier concentration is increased. However, once the second subband becomes populated, the ground subband scattering time begins to decrease. The quantum scattering time for the excited subband is also observed to decrease as the concentration is increased. Our results are consistent with the theoretical results by A. Isihara and L. Smrcka [J. Phys. C 19, 6777 (1986)]. Finally, from the ratio of the transport and quantum scattering times, it is seen that the transport in the well becomes more isotropic as the concentration is increased. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of channel delta-doped quantum-well structures were characterized by conventional Hall effect and light-modulated Shubnikov–de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magnetoresistance used to characterize the two-dimensional electron gas by conventional SdH measurements. By light modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 T, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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