ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Me/silicon-hydrogen film/Si diode structures are investigated. The main features of the measurements performed are that, first, the method of paired voltage pulses applied to the sample is used and, second, the measurements are performed in the temperature range from 294 K up to 334 K. Reliable estimates of the main characteristics of silicon hydride films, such as the drift mobility, trap density, trap ionization energy, and carrier trapping cross section, are obtained by comparing the results obtained with data from previous work.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187508
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