Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 313-318
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electrical conductivity σ and Hall coefficient RH have been measured in p-Hg1−xCdxTe crystals with x≈0.2 in the temperature region 4.2–300 K. The influence of a crystal surface on galvanomagnetic properties is observed only in the temperature region T〈20 K. Both positive and negative charges are formed on the surface under the influence of a natural air atmosphere after etching in BrMeOH. The formation of an accumulation layer on p-HgCdTe has been observed for the first time. The growth of an inversion layer was studied over one year after etching. The concentration of surface electrons reached the value 3.5 × 1012 cm−2. In the accumulation layer, the hole surface concentration rapidly increased within two months from 1013 cm−2 to 1014 cm−2. The bending of the bands has been calculated, first, by a classical method of solving the Poisson equation and second, by a quantum method using the Zawadski model of a triangular asymmetrical potential well. Preliminary study shows that the type of layer created, inversion or accumulation, can be connected with the orientation of the surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350375
Permalink
|
Location |
Call Number |
Limitation |
Availability |