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  • 1
    Online-Ressource
    Online-Ressource
    Dordrecht :Springer Netherlands,
    Schlagwort(e): Scanning tunneling microscopy-Congresses. ; Electronic books.
    Beschreibung / Inhaltsverzeichnis: Proceedings of the NATO Advanced Study Institute on Basic Concepts and Applications of Scanning Tunneling Microscopy, Erice, Italy, April 17-29, 1989.
    Materialart: Online-Ressource
    Seiten: 1 online resource (516 pages)
    Ausgabe: 1st ed.
    ISBN: 9789401578714
    Serie: NATO Science Series E: Series ; v.184
    DDC: 502/.8/2
    Sprache: Englisch
    Standort Signatur Einschränkungen Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4273-4281 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Roughness and general surface topography of polished Si wafers were systematically studied on an angstrom to nanometer scale by scanning tunneling microscopy (STM). Evaluation of a large number of STM images by using a simple classification scheme assures statistically relevant results without the disadvantages and loss of information connected with averaging the rms roughness or similar methods. For the flat parts of the surface, a rms roughness of 1.2–1.8 A(ring) is found, comparable to that derived from light scattering and diffraction measurements on similar surfaces. Significant amounts of the surfaces were found to exhibit more pronounced structures, contrasting results of other techniques. The reliability and applicability of STM measurements on technical surfaces, on an angstrom to nanometer scale, is discussed in the light of these results.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6774-6783 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We have used variable temperature, ultrahigh vacuum scanning tunneling microscopy (STM), in both static and time-dependent experiments, to study the chemistry of the ethylene/Pt(111) system. Images of ethylene which exhibit long-range order have been obtained at a sample temperature of 160 K. The conversion of ethylene to ethylidyne has been observed directly in STM images. This conversion reaction is observed to occur in a "patchy'' manner across the surface at saturation coverage. As the reaction proceeds, well-defined islands of unreacted ethylene continue to be clearly observed. Further dehydrogenation of the ethylidyne formed from ethylene leads to carbon containing particles dispersed randomly across the sample. After annealing the ethylidyne covered sample to 500 K, the surface is uniformly covered with carbon containing particles which exhibit a bimodal distribution of heights (one and two atomic layers) consisting of an average of ten and twenty carbon atoms, respectively. Further annealing to 700 K results in the formation of larger particles which appear to be a single atomic layer high and 10–15 A(ring) in diameter in the STM images. These particles contain an average of thirty-four carbon atoms. Pt steps do not show any preferential reactivity for these reactions. Annealing the carbon particle covered surface to higher temperatures results in the formation of monolayer thick graphite islands, which eventually accumulate at the Pt steps.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 2128-2148 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The interaction of oxygen with Al(111) was studied by scanning tunneling microscopy (STM). Chemisorbed oxygen and surface oxides can be distinguished in STM images, where for moderate tunnel currents and independent of the bias voltage the former are imaged as depressions, while the latter appear as protrusions. An absolute coverage scale was established by counting O adatoms. The initial sticking coefficient is determined to so=0.005. Upon chemisorption at 300 K the O adlayer is characterized by randomly distributed, immobile, individual O adatoms and, for higher coverages, by small (1×1) O islands which consist of few adatoms only. From the random distribution of the thermalized O adatoms at low coverages a mobile atomic precursor species is concluded to exist, which results from an internal energy transfer during dissociative adsorption. These "hot adatoms'' "fly apart'' by at least 80 A(ring), before their excess energy is dissipated. A model is derived which explains the unusual island nucleation scheme by trapping of the hot adatoms at already thermalized oxygen atoms. Oxidation starts long before saturation of the (1×1) O adlayer, at coverages around aitch-thetaO(approximately-equal-to)0.2. For a wide coverage range bare and Oad covered surfaces coexist with the surface oxide phase. Upon further oxygen uptake both chemisorbed and oxide phase grow in coverage. Oxide nucleation takes place at the interface of Oad islands and bare surface, with a slight preference for nucleation at upper terrace step edges.Further oxide formation progresses by nucleation of additional oxide grains rather than by growth of existing ones, until the surface is filled up with a layer of small oxide particles of about 20 A(ring) in diameter. At very large exposures up to 5×105 L they cover the entire surface as a relatively smooth, amorphous layer of aluminum oxide. The difference in Al atom density between Al metal and surface oxide is accommodated by short range processes, with no indication for any long range Al mass transport. Based on our data we discuss a simpler two step model for the interaction of oxygen with Al(111), without making use of an additional subsurface oxygen species. The complex spectroscopic data for the O/Al(111) system are rationalized by the wide coexistence range of bare and Oad covered surface with surface oxide and by differences in the electronic and vibronic properties of the surface atoms depending on the number of neighboring O adatoms in the small Oad islands.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2853-2858 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the fabrication of nanometer-sized structures by scanning tunneling microscope induced decomposition of Mo(CO)6 precursor molecules on Si(111)-(7×7). Based on the analysis of characteristic properties of these structures in the region of the deposition threshold the mechanism leading to Mo(CO)6 fragmentation under these conditions and subsequent formation of nanostructures can be identified. This mechanism consists of an electron induced excitation of the molecule to an antibonding state with subsequent spontaneous separation of a CO ligand. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4131-4136 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The initial stages of oxide formation on atomically flat, monohydride terminated Si(111) surfaces by oxidation in 30% hydrogen peroxide solution (H2O2) were investigated by scanning tunneling microscopy and x-ray photoelectron spectroscopy. The reaction proceeds via homogeneous nucleation of small oxide clusters on the surface and subsequent lateral growth of these clusters within the surface bilayer. The oxidation of the topmost Si(111) bilayer in H2O2 solution is completed after 30 min, leading to a SiO1.2 average layer composition. For the next bilayer the oxidation rate decreases drastically—after 2 months only 60% of the second bilayer are oxidized. An inverse logarithmic rate of the second bilayer oxidation is consistent with a field assisted growth mechanism. The significant differences in the oxidation rates between the first and the second bilayer allow to produce well defined oxide layers of about 5 A(ring) thickness. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1027-1029 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Stable, high-resolution scanning tunneling microscopy imaging of Si surfaces in an electrochemical environment, under potentiostatic control, is demonstrated. Atomic scale structures such as monoatomic steps are resolved on H2SO4 covered Si(100) surfaces. In this environment, contamination and reoxidation are quantitatively inhibited, making this method applicable for imaging of technical Si surfaces.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2508-2510 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The evolution of the tantalum/diamond interface upon room-temperature Ta deposition on the (100) surface of a boron doped, synthetically grown diamond single crystal was monitored by Auger electron spectroscopy (AES), ionization loss spectroscopy (ILS), and electron energy loss spectroscopy (ELS). Characteristic loss peaks indicate carbide formation at the interface from very low coverages on, reflecting the strong interaction between tantalum and carbon. Thicker layers of TaC are formed during subsequent thermal annealing by diffusion of carbon into the tantalum film, at the same time the topmost diamond region is transformed into poorly ordered graphitic carbon. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2516-2518 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The initial phases of anodic Si(111) etching in 40% NH4F solution at potentials between −0.97 VAg/AgCl (open circuit potential) and +0.5 VAg/AgCl were investigated by scanning tunneling microscopy. Pores of several hundred angström width and 10–30 A(ring) depth, increasing with more anodic potentials, signal the beginning formation of a porous surface. The observation of atomic steps proves the crystallinity of the new surface and the absence of an amorphous deposit layer under these conditions.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2136-2138 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A scanning tunneling microscope (STM) is used to locally modify p-n junctions on a scale of a few tens of nanometers. The p-n junction is composed of a phosphorus-doped, hydrogenated amorphous Si [a-Si:H(P)] layer deposited on heavily doped p-type crystalline Si(111). Under conditions of high current densities, with the p-n junction biased in forward direction, the a-Si:H layer is structurally changed leading to a decrease of the junction barrier height. The resulting exponential increase of hole injection into the modified amorphous layer leads to electronically active structures. They are detected by STM owing to their differing electronic properties.
    Materialart: Digitale Medien
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