Keywords:
Semiconductors -- Surfaces -- Congresses.
;
Electronic books.
Type of Medium:
Online Resource
Pages:
1 online resource (663 pages)
Edition:
1st ed.
ISBN:
9780444600165
URL:
https://ebookcentral.proquest.com/lib/geomar/detail.action?docID=1457885
Language:
English
Note:
Front Cover -- Surfaces and Interfaces: Physics and Electronics -- Copyright Page -- Table of Contents -- Preface -- Introduction -- PART 1: DEPENDENCE OF ELECTRONIC PROPERTIES ON SURFACE GEOMETRY -- CHAPTER 1. ELECTRONIC PROPERTIES AND SURFACE GEOMETRY OF GaAs AND ZnO SURFACES -- 1. Introduction -- 2. Basic data and models of the low-index GaAs surfaces -- 3. Basic data and models of the low-index ZnO surfaces -- Acknowledgement -- References -- CHAPTER 2. ELECTRONIC STRUCTURE OF Si(111) SURFACES -- 1. Introduction -- 2. Comparison of photoemission results -- 3. Inverse photoemission results -- 4. Quenching of surface states by hydrogen -- Acknowledgements -- Note added in proof -- References -- CHAPTER 3. PHOTOEMISSION STUDIES OF SURFACE STATES ON Si(111)2 X 1 -- 1. Introduction -- 2. Consistency of different experiments -- 3. A comparison between Si(111)2 X 1 and Ge(111)2 X 1 -- 4. Relating experiments to a theoretical model -- 5. Conclusion -- Acknowledgements -- References -- CHAPTER 4. Si(111)2 X 1 STUDIES BY ANGLE RESOLVED PHOTOEMISSION -- References -- CHAPTER 5. THE π-BONDED CHAIN-MODEL FOR Si(111)-(2 X 1) IN VIEW OF RECENT WAVEVECTOR-RESOLVED ELECTRON ENERGY LOSS SPECTRA -- References -- CHAPTER 6. THE MOTT INSULATOR MODEL OF THE Si(111)-(2 X 1) SURFACE -- 1. Introduction -- 2. Results and discussion -- 3. Comparison with other theoretical studies -- 4. Conclusions -- Acknowledgement -- Appendix A. Core level calculations -- Appendix B. Energy dispersion calculations -- References -- CHAPTER 7. ELECTRONIC SURFACE STATES AT STEPS IN Si(111)2 X 1 -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- 4. Conclusions -- Acknowledgements -- References -- CHAPTER 8. A NOVEL METHOD FOR THE STUDY OF OPTICAL PROPERTIES OF SURFACES -- References.
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CHAPTER 9. LOW TEMPERATURE LEED AND ELECTRIC CONDUCTIVITY MEASUREMENTS FOR CLEAVED Si(111) SURFACES -- 1. Introduction -- 2. Experimental measurements -- 3. Discussion -- 4. Conclusion -- Acknowledgements -- References -- PART 2: SURFACE DEFECTS -- CHAPTER 10. SPOT PROFILE ANALYSIS (LEED) OF DEFECTS AT SILICON SURFACES -- 1. Introduction -- 2. Qualitative evaluation -- 3. Quantitative evaluation -- 4. Examples of defects at silicon surfaces -- Acknowledgements -- References -- CHAPTER 11. CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS -- 1. Introduction -- 2. Space charge layers and surface states [27] -- 3. Metal-GaAs(110) and semiconductor-GaAs(110) interfaces -- 4. Chemical trends in Schottky barriers -- 5. On the mechanism of defect formation -- 6. Final remarks -- Acknowledgements -- References -- CHAPTER 12. SURFACE DEFECTS ON SEMICONDUCTORS -- 1. Introduction -- 2. Clean semiconductor surfaces -- 3. Adsorbed layers on semiconductors -- 4. Metals on semiconductors -- 5. Conclusions -- Acknowledgements -- References -- PART 3: TRANSITION FROM CHEMISORPTION TO STABLE INTERFACE STRUCTURE -- CHAPTER 13. THE FORMATION OF INTERFACES ON GaAs AND RELATED SEMICONDUCTORS: A REASSESSMENT -- 1. Introduction -- 2. The structural and chemical characterization of interfaces -- 3. Metal - III-V semiconductor interfaces -- 4. The oxygen-GaAs(110) interface -- 5. Summary and conclusions -- Acknowledgements -- References -- CHAPTER 14. PHYSICS AND ELECTRONICS OF THE NOBLE-METAL/ ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION: A STATUS REPORT -- 1. Introduction -- 2. The Au/Si(111) interface -- 3. The Ag/Si(111) interface -- 4. Oxidation of the Si(111)/noble-metai interfaces -- 5. The Au/Si(100) and Ag/Si(100) interfaces. -- 6. The Au/Ge(111) and Ag/Ge(111) interfaces -- 7. Summary and conclusions -- References.
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CHAPTER 15. LOCAL STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS: A BRIEF SUMMARY -- Acknowledgements -- References -- PART 4: SYSTEMATICS OF SCHOTTKY BARRIERS -- CHAPTER 16. SYSTEMATICS OF CHEMICAL STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR-METAL INTERFACES -- 1. Introduction -- 2. Chemical dependence of Schottky barrier heights -- 3. III-V compound semiconductor-metal interfaces: barrier heights and chemical structure -- 4. II-VI compound semiconductor-metal interfaces -- 5. Conclusions -- Acknowledgements -- References -- CHAPTER 17. SCHOTTKY BARRIERS: MODELS AND "TESTS -- Acknowledgements -- References -- CHAPTER 18. SCHOTTKY BARRIER AMORPHOUS-CRYSTALLINE INTERFACE FORMATION -- 1. Introduction -- 2. Materials preparation -- 3. Conduction processes -- 4. Conclusion -- References -- CHAPTER 19. COMPUTER MODELLING OF HIGH BARRIER SCHOTTKY DIODES APPLIED TO STUDY OF THE ACCURACY OF EXPERIMENTAL BARRIER DETERMINATION -- References -- PART 5: SILICIDE INTERFACE STRUCTURE -- CHAPTER 20. MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES -- 1. Introduction -- 2. Interface chemical reactions -- 3. Interface electronic structure -- 4. Interface lattice structure: TEM observations -- 5. Interface composition -- 6. True interface states -- 7. Interface atomic structure -- 8. Compound formation and interdiffusion -- 9. Schottky barrier properties -- 10. Conclusions and outlook -- Acknowledgements -- References -- CHAPTER 21. THE ELECTRON STATES IN THE Si(111)-Pd INTERFACE: TOWARDS A REASSESSMENT OF THE EXPERIMENTAL INFORMATION -- 1. Introduction -- 2. The interface states -- 3. The coverage dependence of the d-states -- 4. Conclusions -- Acknowledgement -- References -- Chapter 22. Si-Cr AND Si-Pd INTERFACE REACTION AND BULK ELECTRONIC STRUCTURE OF Ti, V, Cr, Co, Ni, AND Pd SILICIDES -- 1. Introduction -- 2. Experimental.
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3. Bulk silicides: results and discussion -- 4. Interface reaction: results and discussion -- 5. Conclusions -- Acknowledgements -- References -- CHAPTER 23. SIMPLE DIPOLE MODEL FOR BARRIER HEIGHTS OF SILICIDE-SILICON AND METAL-SILICON BARRIERS -- References -- PART 6: FORMATION OF SEMICONDUCTOR INTERFACES -- CHAPTER 24. FAR FROM EQUILIBRIUM VAPOUR PHASE GROWTH OF LATTICE MATCHED III-V COMPOUND SEMICONDUCTOR INTERFACES: SOME BASIC CONCEPTS AND MONTE-CARLO COMPUTER SIMULATIONS -- 1. Introduction -- 2. Growth mechanisms - theoretical background -- 3. Molecular beam epitaxial growth -- 4. The model and the Monte-Carlo procedure -- 5. Results -- 6. Some observations and suggestions -- Acknowledgements -- References -- CHAPTER 25. GROWTH AND DOPING OF GALLIUM ARSENIDE USING MOLECULAR BEAM EPITAXY (MBE): THERMODYNAMIC AND KINETIC ASPECTS -- 1. Introduction -- 2. Crystal growth -- 3. Dopant incorporation -- 4. Conclusions -- Acknowledgments -- References -- PART 7: TRAP STATES AT INTERFACES -- CHAPTER 26. SURFACE FERMI LEVEL OF III-V COMPOUND SEMICONDUCTOR-DIELECTRIC INTERFACES -- 1. Introduction -- 2. Experimental methods -- 3. Indium phosphide -- 4. Gallium indium arsenide -- 5. Gallium arsenide -- 6. An overview -- Acknowledgements -- Appendix -- References -- CHAPTER 27. RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES -- 1. Introduction -- 2. Phenomenological description of surface recombination -- 3. Examples and applications -- 4. Conclusions -- Acknowledgements -- References -- CHAPTER 28. INTERFACE STATES AT THE SiO2-Si INTERFACE -- 1. Introduction -- 2. Measurement techniques -- 3. Experimental results on interface state properties -- 4. Theoretical models -- 5. Conclusions -- Acknowledgements -- References -- CHAPTER 29. DIPOLES, DEFECTS AND INTERFACES -- 1. Introduction -- 2. Dipole layers -- 3. Submonolayer coverages.
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4. Metal-semiconductor interface -- 5. Semiconductor-semiconductor interfaces -- 6. Conclusions -- References -- CHAPTER 30. TRAPS AT INTERFACES BETWEEN GaAs n-TYPE LPE LAYERS AND DIFFERENT SUBSTRATES -- 1. Introduction -- 2. Sample preparation -- 3. Measurement techniques -- 4. Results -- 5. Discussion -- Acknowledgements -- References -- PART 8: HETEROSTRUCTURES AND SUPERLATTICES -- CHAPTER 31. THE HETEROJUNCTION PARAMETERS FROM A MICROSCOPIC POINT OF VIEW -- 1. Introduction -- 2. Nature of the valence-band discontinuity -- 3. Interface Fermi-level pinning -- 4. Probable future developments -- Acknowledgments -- References -- CHAPTER 32. ON THE ADJUSTABILITY OF THE "ABRUPT" HETEROJUNCTION BAND-GAP DISCONTINUITY -- 1. Introduction -- 2. Application of surface and interface physics to the study of heterostructure barriers -- 3. Band edge offsets and the growth of heterojunctions -- 4. Importance of interface nanostmcture formed during growth to heterojunction electronic barriers -- 5. Theoretical directions -- 6. Is the band-gap discontinuity adjustable? Summary and challenge -- Acknowledgments -- References -- CHAPTER 33. EFFECT OF TEMPERATURE ON THE Ge/GaAs(110) INTERFACE FORMATION -- 1. Introduction -- 2. Experimental -- 3. Results and discussion -- Acknowledgments -- References -- CHAPTER 34. VALENCE-BAND DISCONTINUITIES FOR ABRUPT (110), (100), AND (111) ORIENTED Ge-GaAs HETEROJUNCTIONS -- 1. Introduction -- 2. Summary of experimental details -- 3. ΔΕr results -- 4. Discussion -- Acknowledgment -- References -- CHAPTER 35. ELECTRON MOBILITIES IN MODULATION-DOPED GaAs-(AlGa)As HETEROSTRUCTURES -- References -- CHAPTER 36. NEW DEVICE APPLICATIONS OF BANDEDGE DISCONTINUITIES IN MULTILAYER HETEROJUNCTION STRUCTURES -- 1. Introduction -- 2. Real space transfer devices -- 3. Multilayer avalance detectors -- Acknowledgement -- References.
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CHAPTER 37. SEMICONDUCTORS WITH HETERO-n-i-p-i SUPERLATTICES.
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