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  • 1
    Electronic Resource
    Electronic Resource
    Sample manipulator for Auger angular dependence studies (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2892-2893 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modification to a commercial sample manipulator is described by which the angle between the incoming beam direction and the normal of the sample, as well as the angle of rotation about the normal, can be changed by 60° and 360°, respectively, from the outside of an UHV analysis chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139011
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison between ruthenium-based and other ohmic contact systems to p-type GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1933-1935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conventional furnace annealed Ru/Au ohmic contact system on p-GaAs has been investigated. Electrical and morphological characteristics of this contact system were compared with other systems such as Cr/Au, Ti/Pt, and Mn/Au. The Ru/Au contact system has been shown to have superior surface morphology and a comparable specific contact resistance value, even after annealing at 485 °C. The advantages of utilizing Ru as contact material to GaAs are that it forms high quality, thermally stable Schottky contacts to n-GaAs and thermally stable ohmic contacts with low specific contact resistance to p-GaAs. This dual nature of Ru contacts to GaAs makes them extremely important for future use in devices such as heterojunction bipolar transistors (HBTs) and solid state lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108493
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4339-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped n-GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinical p(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that four electron traps, En1, En2, En4, and En5, with energy levels at 0.04, 0.14, 0.36, and 0.66 eV, respectively, below the conduction band were created during neutron radiation. Their introduction rates varied from 1 cm−1 for the En1 to 11 cm−1 for the En5. It was found that the En1, En2, and En4 defects have DLTS "signatures'' similar to the E1, E2, and E3 point defects introduced during high energy electron irradiation, indicating their point defect nature. The En5 has a very large capture cross section, its emission rate exhibits a strong electric field dependence, and there are indications that it has a band-like energy distribution, that results in a broad DLTS peak. We speculate that this trap is related to the presence of extended defects in the neutron irradiated GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354399
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  • 4
    Electronic Resource
    Electronic Resource
    Corrosion behaviour of duplex stainless steels containing minor ruthenium additions in reducing acid media (1996)
    Springer
    Journal of applied electrochemistry 26 (1996), S. 1103-1110 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract The dissolution behaviour, as well as the time, potential and concentration dependence of HSO − 4 SO 2t- 4 and Cl− accumulations measured by an in situ radiotracer method on surface oxide-layers of duplex stainless steels containing various amounts of ruthenium as additive are presented and discussed. Several independent techniques, such as mass loss tests, potentiodynamic responses, radiotracer and ICP methods, were used to characterize the complex features of the passivation phenomena of steels modified with ruthenium. The experimental results reveal that the interaction of bisulfate/sulfate ions with passive oxide layer is stronger than those of chloride ions on the stainless steels studied. Both the extent and the strong character of bisulfate/sulfate accumulation are more likely related to the redistribution of the main alloying components (Cr, Ni, Mo) as well as the Ru in the surface oxide-film formed on steels passivated spontaneously in dilute HCl and H2SO4. It is found that the ruthenium additions to the base duplex stainless steel significantly increase the corrosion resistance in reducing acid environments. There is evidence of anodic inhibition and this seems to be responsible for the observed increased corrosion resistance of the duplex stainless steels with small ruthenium additions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00243734
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  • 5
    Electronic Resource
    Electronic Resource
    Preferential sputtering of GaAs (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 491-495 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Low-energy (0.65-3 keV) Ar+ ions were used to sputter (100) and (110) GaAs. Preferential sputtering effects were investigated by means of Auger electron spectroscopy. The results show that the equilibrium sputtered surface composition on both surfaces is depleted in As. No sample orientation effects were observed. However, the equilibrium compositions of the sputtered surfaces become increasingly Ga-enriched by increasing the energy of the bombarding ions. The sputtered surface composition is independent of the angle of incidence of the bombarding Ar+ ions. For the different experimental conditions, the mean final surface compositions varied from GaAs0.89 to GaAs0.69. These values are in broad agreement with other reported AES studies. This agreement is probably due to the fact that the sputtered surface composition is independent of the angle of incidence of the ions on the GaAs sample.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180706
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