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  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability and dopant drive-out characteristics of CoSi2 polycide gates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4712-4714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BF2-implanted CoSi2 polycide gates that are stable at high temperatures up to 1000 °C have been fabricated. The use of CoSi2 polycide as a boron diffusion source was evaluated using a metal-oxide-semiconductor capacitor structure on a p-type Si substrate. This structure is useful in monitoring the diffusion of the electrically activated dopants from the silicide towards the polycrystalline silicon-SiO2 interface. Our results show that using BF2-implanted CoSi2 as a diffusion source is effective in doping polycrystalline silicon gates degenerately without any degradation of the polycide resistivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352743
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition growth and characterization of undoped and doped Ge and Ge1−xCx quantum dots on Si (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3564-3566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Germanium quantum dots have been grown on Si substrates at various temperatures for different durations and studied with atomic force microscopy to determine the growth conditions for the smallest and most uniform size quantum dots. Ge1−xCx quantum dots grown at varying Ge:C ratios have been characterized to study the effects of strain compensation by C. The effects of P and B doping on both Ge and Ge1−xCx dots have also been investigated. The results show fewer quantum dots in Ge1−xCx due to strain compensation of Ge by C, and suggest the formation of larger dots with P doping and smaller and more uniform dots with B doping. X-ray diffraction measurements on the samples show the strain in the films, with the rocking curves changing with the ratio of C in the quantum dots. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120392
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide field-effect transistor process using cobalt silicide as a diffusion/doping source (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 345-347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Submicron p-metal-semiconductor-oxide field-effect transistors (MOSFETs) have been fabricated using cobalt silicide as a diffusion source for forming shallow p-n junctions and as a doping source for undoped as-deposited amorphous silicon gate (SADDS). The thermal stability of CoSi2 on polycrystalline silicon is shown to be significantly improved by using as-deposited amorphous silicon instead of as-deposited polycrystalline silicon as the gate material. The p-MOSFETs fabricated using the SADDS process exhibit excellent characteristics and open up the possibility of eliminating several masks and implants in more complicated complimentary metal-oxide semiconductor processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111143
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  • 4
    Electronic Resource
    Electronic Resource
    Degradation mechanisms and improvement of thermal stability of CoSi2/polycrystalline Si layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1505-1507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation mechanisms of CoSi2/polycrystalline Si (polycide) films have been investigated. CoSi2 was formed on various silicon substrates (stacked or one-layer structures composed of polycrystalline Si 800–10 800 A(ring) and amorphous Si 800–3000 A(ring)). The thermal stability of these silicide films were examined using four-point probe measurement. It was found that the microstructure of the underlying silicon substrate, rather than the grain size of the CoSi2 or the silicide/polycrystalline Si interface, has the greatest influence on the thermal stability of the polycide films. The CoSi2 formed on as-deposited amorphous Si provides the maximum thermal stability. Those films are stable at 1000 °C up to 120 s, even for undoped polycide films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111873
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