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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen bonding in plasma-deposited amorphous hydrogenated boron films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1905-1908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous boron (a-B:H) thin films were prepared by radio-frequency plasma deposition using B2H6 (10%) in H2 as precursor gas. The influence of the substrate temperature and self-bias on the a-B:H film structure was investigated. The boron and hydrogen atom densities were determined by ion-beam analysis. The film structure, especially the bonding of hydrogen to boron, was investigated by Fourier transform infrared (FTIR) spectroscopy. The FTIR data were quantified by using a new formalism which allows a proper calculation of the extinction coefficient from the FTIR spectra. The intensities of the different boron-hydrogen absorption bands were compared with the ion-beam analyzed hydrogen atom densities to determine the absorption strength of the B–H terminal and B–H–B bridge bonds. A non-negligible fraction of hydrogen is shown to be bonded to boron in a B–H–B bridge bond. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365997
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of oxygen incorporation on the properties of magnetron sputtered hydrogenated amorphous germanium films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1961-1963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous germanium-oxygen alloy films (a-Ge1−xOx:H) with 10−5≤x≤0.4 were prepared by reactive dc-magnetron sputtering at substrate temperatures of 320 and 420 K in an Ar/H2/O2 atmosphere. No influence of the added oxygen on any material properties could be detected for an oxygen partial pressure p(O2)≤3×10−4 mTorr corresponding to x≤10−4 (unintentional contamination regime). Between 2×10−4≤x≤5×10−3 the dark conductivity of the films linearly increases with x (doping regime). In this regime the optical gap and the hydrogen content remain unchanged, while midgap absorption and Urbach energy weakly increase indicating the increase of network disorder and defect density due to the Fermi level shift caused by the oxygen doping. Maximum conductivity of 8×10−3 Ω−1 cm−1 is achieved for x≈0.02. For x(approximately-greater-than)0.05 the conductivity and the hydrogen content drop, defect density and Urbach energy strongly increase, and the pronounced increase of the optical gap points to the formation of an alloy (alloy regime).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109504
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical erosion of amorphous hydrogenated boron films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1326-1328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous-hydrogenated boron (a-B:H) and carbon (a-C:H) thin films were prepared by radio-frequency plasma deposition using (B2H6+H2) or CH4 as a precursor gas. The film composition and density were investigated by ion-beam analysis. The films were eroded by hydrogen electron cyclotron resonance plasmas at floating potential and by atomic hydrogen dissociated by a hot filament. The temperature of the substrates was increased during the erosion process from 330 to 680 K. Erosion rates were measured in situ by ellipsometry. a-B:H films are shown to be much more resistant to erosion by hydrogen ions (H+) and atomic hydrogen (H0) than a-C:H films. In contrast to a-C:H films, no chemical erosion of a-B:H films by H0 was observed at temperatures below 600 K. Ion energies lower than the threshold energy for physical sputtering cause measurable erosion rates for a-B:H films. It is concluded that this is a synergistic effect of simultaneous H0 and H+ bombardment and it is designated as ion-induced chemical erosion. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119885
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  • 4
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    Instantaneous ion configurations in the K+ ion channel selectivity filter revealed by 2D IR spectroscopy (2016)
    American Association for the Advancement of Science (AAAS)
    In: Science
    Details
    Publication Date: 2016-09-02
    Description: Potassium channels are responsible for the selective permeation of K + ions across cell membranes. K + ions permeate in single file through the selectivity filter, a narrow pore lined by backbone carbonyls that compose four K + binding sites. Here, we report on the two-dimensional infrared (2D IR) spectra of a semisynthetic KcsA channel with site-specific heavy ( 13 C 18 O) isotope labels in the selectivity filter. The ultrafast time resolution of 2D IR spectroscopy provides an instantaneous snapshot of the multi-ion configurations and structural distributions that occur spontaneously in the filter. Two elongated features are resolved, revealing the statistical weighting of two structural conformations. The spectra are reproduced by molecular dynamics simulations of structures with water separating two K + ions in the binding sites, ruling out configurations with ions occupying adjacent sites.
    Keywords: Biochemistry
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Geosciences , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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