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  • 1
    Electronic Resource
    Electronic Resource
    Structure, chemistry, and growth mechanisms of photovoltaic quality thin-film Cu(In,Ga)Se2 grown from a mixed-phase precursor (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 153-161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation chemistry and growth dynamics of thin-film CuInSe2 grown by physical vapor deposition have been considered along the reaction path leading from the CuxSe:CuInSe2 two-phase region to single-phase CuInSe2. The (Cu2Se)β(CuInSe2)1−β (0〈β≤1) mixed-phase precursor is created in a manner consistent with a liquid-phase assisted growth process. At substrate temperatures above 500 °C and in the presence of excess Se, the film structure is columnar through the film thickness with column diameters in the range of 2.0–5.0 μm. Films deposited on glass are described as highly oriented with nearly exclusive (112) crystalline orientation. CuInSe2:CuxSe phase separation is identified and occurs primarily normal to the substrate plane at free surfaces. Single-phase CuInSe2 is created by the conversion of the CuxSe into CuInSe2 upon exposure to In and Se activity. Noninterrupted columnar growth continues at substrate temperatures above 500 °C. The addition of In in excess of that required for conversion produces an In-rich near-surface region with a CuIn3Se5 surface chemistry. A model is developed that describes the growth process. The model provides a vision for the production of thin-film CuInSe2 in industrial scale systems. Photovoltaic devices incorporating Ga with total-area efficiencies of 14.4%–16.4% have been produced by this process and variations on this process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359362
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of CuInSe2 thin films by rapid thermal recrystallization (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2678-2680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin-film CuInSe2 has been formed by rapid thermal processing of vacuum codeposited Cu, In, and Se. Films were fabricated and characterized in three composition regions: Cu-poor (∼20 at. % Cu), stoichiometric (25 at. %), and Cu-rich (∼28 at. %). Characterization results are presented including x-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements. Results show that nearly single-phase material has been formed from codeposited precursors with a post-deposition annealing time of less than 2 min. The films have optical absorption coefficients in the high 104 cm−1 range with minimum subgap absorption, and an optical band gap of 1.0 eV with smooth morphologies amenable to photovoltaic device fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104805
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