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  • 1
    Electronic Resource
    Electronic Resource
    Electrical transport properties of CoSi2 and Co(SixGe1−x)2 films formed by different methods (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5427-5432 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co-evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3-μΩ-cm and room-temperature (RT) resistivity of 15 μΩ cm. The co-evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350200
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-pressure study of the magnetic states of disordered Ni-Mn alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4096-4098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-field ac susceptibility measurements have been performed on disordered Ni1−x Mnx, where x=0.216, 0.225, and 0.265, under hydrostatic pressure up to 21 kbar. The measured susceptibility χm exhibits transitions from paramagnetic to quasiferromagnetic to spin-glass states on cooling. The pressure dependence indicates a decrease in the magnitude of χm and opposite shifts in the temperatures of the two transitions. The nature of the quasiferromagnetic state is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340561
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Silicon detector for low-energy electron spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1464-1467 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel silicon surface barrier detector has been constructed for low-energy electron spectroscopy. This detector consists of a high-resistance silicon wafer which is sandwiched between a rectifying barrier front and ohmic back contacts. The front electrode is a gold mesh metallization with an effective area of 8% of the detector surface. This electrode allows most of the electrons to reach the active region of the detector with the smallest possible degradation in their energy distribution due to electron straggling in the front electrode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141153
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    Paper (German National Licenses)
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