GLORIA

GEOMAR Library Ocean Research Information Access

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Document type
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Sputter deposition of highly 〈100+001〉-textured tetragonal barium titanate on unheated silica using a neon discharge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3045-3046 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sputter deposition of highly 〈100+001〉-textured tetragonal BaTiO3 on unheated substrates using a pressed powder BaTiO3 target and a radio frequency-excited Ne discharge is reported. For comparison, amorphous BaTiO3 was also produced, using an Ar discharge operated at the same value of all other independent process parameters. In situ discharge diagnostics using optical emission spectrometry was used to study the plasma volume. Data show that there was atomic Ti but no atomic Ba in the Ne discharge used to produce t-BaTiO3. However, both atomic Ba and Ti were identified in the Ar discharge used to produce a-BaTiO3. A probable source of free Ba atoms in the plasma is the reduction of BaTiO3 at the target surface due to the sputtering action of Ar+ ions. By comparison with other sputter-deposited metal oxide systems, the effect on film crystallinity of atomic metal versus molecular metal oxide flux incident on the substrate is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350991
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Wet oxidation of GeSi at 700 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4015-4018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: About 500-nm-thick films of Ge0.36Si0.64 and Ge0.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700 °C in wet ambient. A uniform GexSi1−xO2 oxide layer forms with a smooth interface between it and the unoxidized GexSi1−x layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350847
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    The transformation structure of zirconia-alumina nanolaminates studied by high resolution electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1315-1319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative high resolution electron microscopy (HREM) was employed to study the crystallography of a zirconia-alumina transformation-toughening nanolaminate. The nanolaminate consisted of alternating layers of polycrystalline zirconia and amorphous alumina. The zirconia layer thickness was scaled to insure unity volume fraction of the metastable tetragonal phase at the growth temperature, as predicted by an end-point thermodynamics model and verified by x-ray diffraction. In the microscopy sample, phase identification was achieved from precise measurements of lattice spacings using digital diffractograms of individual nanocrystallites. Of the nanocrystallites analyzed, (22±6)% were monoclinic in a distinct crystallographic relationship with their tetragonal neighbors. The following plane and direction relationships were identified: m(100)//t(100) and m[001]//t[001]. The observed structure is the result of a stress-induced transformation from the tetragonal phase. This transformation was localized to nanosized regions within the individual zirconia layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361027
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Thermodynamics of tetragonal zirconia formation in a nanolaminate film (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1176-1178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zirconia–alumina transformation-toughening nanolaminates were fabricated by reactive sputter deposition. The average crystallite size and volume fraction of each zirconia polymorph were determined by x-ray diffraction. The volume fraction of tetragonal zirconia, the phase necessary for transformation toughening, was found to strongly depend upon the zirconia layer thickness. An end-point thermodynamics model involving hemispherical cap zirconia crystallites was developed to explain this phenomenon. In excellent agreement with experimental results, the model predicts that unity volume fraction of tetragonal zirconia is produced in the nanolaminate when the zirconia layer thickness is less than the radius at which a growing zirconia crystallite spontaneously transforms to the monoclinic phase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360902
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Tetragonal zirconia growth by nanolaminate formation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3548-3550 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer films of polycrystalline zirconia and amorphous alumina were grown by reactive sputter deposition and characterized using x-ray diffraction and high resolution electron microscopy. We demonstrate that the layer spacing can be scaled to insure nanosize crystallites in the zirconia layer. The result is that nanolaminates with a high volume fraction of retained tetragonal zirconia are produced, independent of deposition parameters and without the addition of a stabilizing dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111220
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    (Zr,Ti)O2 interface structure in ZrO2–TiO2 nanolaminates with ultrathin periodicity (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 238-240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mixed cation interfacial structure in ZrO2–TiO2 nanolaminate films with ultrathin bilayer periodicity grown by sputter deposition at 297 K was identified by x-ray diffraction and nonresonant Raman spectroscopy. This structure consists of an amorphous phase at a ZrO2-on-TiO2 bilayer interface, followed by an extensive crystalline monoclinic (Zr,Ti)O2 solid solution predicted by Vegard's law. Monoclinic (Zr,Ti)O2 has previously been reported only once, in bulk powder of a single composition (ZrTiO4) at high pressure. Its stabilization in the nanolaminates is explained by the Gibbs–Thomson effect. This complex interfacial structure is shown to be a means of accommodating chemical mixing in the absence of a driving force for heteroepitaxy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492013
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical behavior near the fundamental absorption edge of sputter-deposited microcrystalline aluminum nitride (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4360-4363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical behavior near the fundamental absorption edge (4.1–6.6 eV) of sputter-deposited microcrystalline aluminum nitride grown on unheated fused silica substrates is studied here. The absorption coefficient α shows three types of behavior with incident photon energy E: (1) a high-energy region (〉6.06 eV) in which α slowly varies with E, (2) a middle-energy region (∼5.6–6.06 eV) in which α varies directly with exp E, and (3) a low-energy shoulder. High- and medium-energy absorption is modeled in terms of a disordered semiconductor, using a coherent potential approximation with Gaussian site disorder in the valence and conduction bands. α is expressed in terms of three interrelated energy parameters: the energy-band gap of the virtual crystal (6.18 eV), the energy gap of the disordered crystal (5.50–5.64 eV), and the inverse slope of the exponential dependence of α on E (0.24–0.29 eV). Enhancement of α at low energy is explained in terms of a discrete absorption band whose strength is ∼6×1020/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343986
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...