In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 27, No. 3 ( 2009-05-01), p. 1604-1608
Abstract:
Homoepitaxial MgxZn1−xO:P thin films with variable magnesium content (x & lt;0.05) have been grown by pulsed-laser deposition. The film compositions have been determined by proton induced x-ray analysis. The phosphorous and magnesium content of the films decreases with increasing oxygen partial pressure during growth. High-resolution x-ray diffraction shows a pseudomorphic growth of the thin films with a nominal MgO content of 2 wt %. Hall-effect measurements show electron mobilities of the as-grown films as high as 820 cm2/V s at 55 K, which compares to the value observed for ZnO:P homoepitaxial thin films. Upon annealing, the free carrier concentration was reduced by several orders of magnitude, depending on the oxygen partial pressure used during growth of the MgZnO:P films, while it remained nearly unchanged in ZnO:P samples. The role of the MgO concentration in the films in acceptor defect formation is discussed.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2009
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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