In:
physica status solidi c, Wiley, Vol. 5, No. 5 ( 2008-05), p. 1386-1390
Abstract:
We study the temperature (10 K … 293 K) dependence of the optical Hall effect (OHE) in modulationdoped Al x Ga 1– x As:Si / GaAs ( x = 0.45) superlattice structures with different quantum well thickness (d GaAs = 16.9 nm and d GaAs = 3.7 nm) using generalized magnetooptic ellipsometry at far‐infrared wavelengths. Free electrons are identified within the wells, but not within the doped barriers. The observed OHE can be fully explained within the Drude model and thermionic rate equations. The quantum‐well free electron density ( N = 1.3 × 10 17 cm –3 ) increases five times upon sample cooling within the wells with d GaAs = 3.7 nm, and remains constant within the wells with d GaAs = 16.9 nm. We describe this behavior as a steady state of three quantum well electron condensation processes: Coulombactivation of electron states at the Al x Ga 1– x As/GaAs interface, quantum‐well‐barrier reservoir interaction, and irreversible electron emission into the host crystal. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200777905
Language:
English
Publisher:
Wiley
Publication Date:
2008
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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