In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 1S ( 1999-01-01), p. 601-
Abstract:
Self-organized InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to InP
substrate were used as an active region of an injection laser. Low threshold (11 A/cm 2 ) lasing at
1.9 nm (77 K) via the quantum dot states was realized. Temperature dependencies of the main laser parameters demonstrate the important role of the nonradiative recombination. An analysis of basic
mechanisms of leakage shows that the Auger recombination share is negligible.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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