In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 527-529 ( 2006-10), p. 1187-1190
Abstract:
SiC JFET, compared with SiC MOSFET, is attractive for high power, high temperature
applications because it is free of gate oxide reliability issues. Trenched-and-Implanted VJFET (TIVJFET) does not require epi-regrowth and is capable of high current density. In this work
we demonstrate two trenched-and-implanted normally-off 4H-SiC vertical junction field-effect transistors (TI-VJFET), based on 120μm, 4.9×1014cm-3 and 100μm, 6×1014cm-3 drift layers. The
corresponding devices showed blocking voltage (VB) of 11.1kV and specific on-resistance (RSP_ON) of 124m7cm2, and VB of 10kV and RSP_ON of 87m7cm2. A record-high value for VB
2/RSP_ON of 1149MW/cm2 was achieved for normally-off SiC FETs.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.527-529
DOI:
10.4028/www.scientific.net/MSF.527-529.1187
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2006
detail.hit.zdb_id:
2047372-2
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