In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 2R ( 1998-02-01), p. 408-
Abstract:
Lattice strains near the Si/NiSi 2 interface and their effects on electron energy-levels of Si were investigated via experimental and theoretical approaches. For highly spatially resolved analysis, electron nanoprobe techniques were employed: convergent beam electron diffraction (CBED) for lattice strain and electron energy-loss spectroscopy (EELS) for the electron energy-levels. Additionally, a theoretical analysis based on the density-functional theory (DFT) was performed to explain the experimental results. The actual distribution of the lattice strains was complicated; both tensile and compressive strains were found to coexist near the interface. Shifts in the Si L 23 -edge of the EEL spectra were found to be induced by the lattice strain. Finally, we described the “distribution of the electron energy-levels” as the strain distribution around the interface in a submicron region.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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